V. Iglesias

1.3k total citations
25 papers, 1.1k citations indexed

About

V. Iglesias is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, V. Iglesias has authored 25 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in V. Iglesias's work include Semiconductor materials and devices (18 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). V. Iglesias is often cited by papers focused on Semiconductor materials and devices (18 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). V. Iglesias collaborates with scholars based in Spain, United Kingdom and Germany. V. Iglesias's co-authors include M. Nafrı́a, M. Porti, G. Bersuker, Keith P. McKenna, Alexander L. Shluger, P. D. Kirsch, Luca Vandelli, Luca Larcher, Andrea Padovani and D. C. Gilmer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nanotechnology.

In The Last Decade

V. Iglesias

23 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Iglesias Spain 12 944 333 116 104 73 25 1.1k
Yuehua Dai China 12 398 0.4× 303 0.9× 98 0.8× 52 0.5× 32 0.4× 66 702
Syed Hassan Abbas Jaffery South Korea 20 668 0.7× 541 1.6× 120 1.0× 38 0.4× 57 0.8× 36 910
Chun‐Hu Cheng Taiwan 18 1.1k 1.2× 703 2.1× 171 1.5× 40 0.4× 26 0.4× 97 1.2k
Tian-Ling Ren China 8 591 0.6× 224 0.7× 211 1.8× 102 1.0× 21 0.3× 9 743
Feiyi Liao China 16 461 0.5× 357 1.1× 249 2.1× 42 0.4× 68 0.9× 43 830
Gaokuo Zhong China 19 566 0.6× 594 1.8× 105 0.9× 123 1.2× 78 1.1× 58 1.0k
Syed Ghazi Sarwat Switzerland 17 445 0.5× 400 1.2× 64 0.6× 78 0.8× 34 0.5× 35 750
Yaohua Yang China 16 325 0.3× 267 0.8× 95 0.8× 86 0.8× 14 0.2× 26 557
Chih‐Wei Kuo Taiwan 12 277 0.3× 238 0.7× 88 0.8× 36 0.3× 17 0.2× 23 552
Zhouming Zheng China 9 539 0.6× 170 0.5× 121 1.0× 49 0.5× 31 0.4× 9 705

Countries citing papers authored by V. Iglesias

Since Specialization
Citations

This map shows the geographic impact of V. Iglesias's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Iglesias with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Iglesias more than expected).

Fields of papers citing papers by V. Iglesias

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Iglesias. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Iglesias. The network helps show where V. Iglesias may publish in the future.

Co-authorship network of co-authors of V. Iglesias

This figure shows the co-authorship network connecting the top 25 collaborators of V. Iglesias. A scholar is included among the top collaborators of V. Iglesias based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Iglesias. V. Iglesias is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Koumoulos, Elias P., Aikaterini-Flora Trompeta, Raquel M. Santos, et al.. (2019). Research and Development in Carbon Fibers and Advanced High-Performance Composites Supply Chain in Europe: A Roadmap for Challenges and the Industrial Uptake. Journal of Composites Science. 3(3). 86–86. 83 indexed citations
3.
Ji, Yanfeng, Fei Hui, Yuanyuan Shi, et al.. (2016). Characterization of the photocurrents generated by the laser of atomic force microscopes. Review of Scientific Instruments. 87(8). 83703–83703. 5 indexed citations
4.
Porti, M., V. Iglesias, Qian Wu, et al.. (2016). CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects. IEEE Transactions on Nanotechnology. 15(6). 986–992. 5 indexed citations
5.
Alpuim, Pedro, et al.. (2016). Laser patterning of amorphous silicon thin films deposited on flexible and rigid substrates. physica status solidi (a). 213(7). 1717–1727. 5 indexed citations
6.
Iglesias, V., M. Porti, S. Claramunt, et al.. (2016). Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements. IEEE Electron Device Letters. 37(5). 640–643. 7 indexed citations
7.
Pérez‐Tomás, Amador, Gustau Catalán, A. Fontserè, et al.. (2015). Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology. 26(11). 115203–115203. 11 indexed citations
8.
Iglesias, V., M. Porti, Qian Wu, et al.. (2015). Threading dislocations in III-V semiconductors: Analysis of electrical conduction. CD.4.1–CD.4.6. 5 indexed citations
9.
Porti, M., et al.. (2015). Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(3). 2 indexed citations
10.
Iglesias, V., et al.. (2015). Monitoring defects in III–V materials: A nanoscale CAFM study. Microelectronic Engineering. 147. 31–36. 5 indexed citations
11.
Shi, Yuanyuan, Yanfeng Ji, Fei Hui, et al.. (2014). (Invited) Elucidating the Origin of Resistive Switching in Ultrathin Hafnium Oxides through High Spatial Resolution Tools. ECS Transactions. 64(14). 19–28. 11 indexed citations
12.
Nafrı́a, M., M. Porti, V. Iglesias, et al.. (2013). Conductive Atomic Force Microscospe as a Tool for the Characterization of Time-Dependent Variability of MOS Devices: Two Case Studies. 1 indexed citations
13.
Iglesias, V., J. Martín-Martínez, M. Porti, et al.. (2013). Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries. Microelectronic Engineering. 109. 129–132. 10 indexed citations
14.
Iglesias, V., Mario Lanza, M. Porti, et al.. (2012). Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures. Microelectronics Reliability. 52(9-10). 2110–2114. 10 indexed citations
15.
Fontserè, A., Amador Pérez‐Tomás, Marcel Placidi, et al.. (2012). Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology. 23(39). 395204–395204. 12 indexed citations
16.
Lanza, Mario, V. Iglesias, M. Porti, M. Nafrı́a, & X. Aymerich. (2011). Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics. Nanoscale Research Letters. 6(1). 108–108. 27 indexed citations
17.
Iglesias, V., Mario Lanza, M. Porti, et al.. (2011). Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress. Applied Physics Letters. 99(10). 103510–103510. 40 indexed citations
18.
McKenna, Keith P., Alexander L. Shluger, V. Iglesias, et al.. (2011). Grain boundary mediated leakage current in polycrystalline HfO2 films. Microelectronic Engineering. 88(7). 1272–1275. 119 indexed citations
19.
Bersuker, G., D. C. Gilmer, Dekel Veksler, et al.. (2010). Metal oxide RRAM switching mechanism based on conductive filament microscopic properties. IRIS UNIMORE (University of Modena and Reggio Emilia). 19.6.1–19.6.4. 92 indexed citations
20.
Iglesias, V., M. Porti, M. Nafrı́a, et al.. (2010). Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures. Applied Physics Letters. 97(26). 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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