Donghyi Koh

424 total citations
17 papers, 250 citations indexed

About

Donghyi Koh is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Donghyi Koh has authored 17 papers receiving a total of 250 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Donghyi Koh's work include Semiconductor materials and devices (14 papers), Electronic and Structural Properties of Oxides (7 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Donghyi Koh is often cited by papers focused on Semiconductor materials and devices (14 papers), Electronic and Structural Properties of Oxides (7 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). Donghyi Koh collaborates with scholars based in United States, South Korea and Hong Kong. Donghyi Koh's co-authors include Sanjay K. Banerjee, Sean W. King, W. A. Lanford, Patrick Henry, Marc French, Han Li, Michelle M. Paquette, Anthony N. Caruso, Markus Kühn and David C. Johnson and has published in prestigious journals such as Nature, Advanced Materials and Applied Physics Letters.

In The Last Decade

Donghyi Koh

16 papers receiving 245 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Donghyi Koh United States 8 200 105 39 39 32 17 250
Lucas Petersen Barbosa Lima Brazil 7 199 1.0× 73 0.7× 44 1.1× 49 1.3× 16 0.5× 29 241
O. V. Milchanin Belarus 10 167 0.8× 209 2.0× 64 1.6× 69 1.8× 25 0.8× 54 298
Anyan Du China 8 179 0.9× 70 0.7× 59 1.5× 41 1.1× 34 1.1× 36 213
Dashen Shen United States 11 300 1.5× 167 1.6× 44 1.1× 30 0.8× 45 1.4× 37 373
Alessandro Veneroni Italy 10 251 1.3× 57 0.5× 40 1.0× 22 0.6× 84 2.6× 19 313
Tomo Ueno Japan 11 288 1.4× 217 2.1× 61 1.6× 54 1.4× 61 1.9× 36 358
И. Н. Пархоменко Belarus 9 142 0.7× 155 1.5× 37 0.9× 56 1.4× 35 1.1× 58 234
S. Kalpat United States 10 314 1.6× 158 1.5× 36 0.9× 55 1.4× 49 1.5× 23 383
Martin Rejhon Czechia 11 173 0.9× 187 1.8× 75 1.9× 90 2.3× 18 0.6× 29 332
L.-Å. Ragnarsson Belgium 11 548 2.7× 168 1.6× 68 1.7× 33 0.8× 45 1.4× 38 602

Countries citing papers authored by Donghyi Koh

Since Specialization
Citations

This map shows the geographic impact of Donghyi Koh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Donghyi Koh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Donghyi Koh more than expected).

Fields of papers citing papers by Donghyi Koh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Donghyi Koh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Donghyi Koh. The network helps show where Donghyi Koh may publish in the future.

Co-authorship network of co-authors of Donghyi Koh

This figure shows the co-authorship network connecting the top 25 collaborators of Donghyi Koh. A scholar is included among the top collaborators of Donghyi Koh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Donghyi Koh. Donghyi Koh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Shaw, Adam L., et al.. (2026). A cavity-array microscope for parallel single-atom interfacing. Nature. 650(8101). 320–326.
2.
Kim, Sangwoo, Ryun‐Han Koo, Jangsaeng Kim, et al.. (2024). A New Back‐End‐Of‐Line Ferroelectric Field‐Effect Transistor Platform via Laser Processing. Small. 21(15). e2406376–e2406376. 5 indexed citations
3.
Perkinson, Collin F., Donghyi Koh, Moungi G. Bawendi, et al.. (2024). Triplet Exciton Sensitization of Silicon Mediated by Defect States in Hafnium Oxynitride. Advanced Materials. 37(7). e2415110–e2415110. 2 indexed citations
4.
Koh, Donghyi, Sanjay K. Banerjee, Stephen E. Saddow, et al.. (2019). Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 37(4). 2 indexed citations
5.
Koh, Donghyi, Sanjay K. Banerjee, Justin Brockman, Markus Kühn, & Sean W. King. (2019). X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces. Diamond and Related Materials. 101. 107647–107647. 12 indexed citations
6.
Gaskins, John T., Patrick E. Hopkins, Devin R. Merrill, et al.. (2017). Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride. ECS Journal of Solid State Science and Technology. 6(10). N189–N208. 92 indexed citations
7.
Chou, Harry, et al.. (2016). Nanoscale doping of compound semiconductors by solid phase dopant diffusion. Applied Physics Letters. 108(12). 1 indexed citations
8.
Koh, Donghyi, S. H. Shin, Sushant Sonde, et al.. (2015). Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device. Applied Physics Letters. 107(18). 3 indexed citations
9.
10.
Kim, Tae‐Woo, Donghyi Koh, Won‐Kyu Park, et al.. (2015). L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack. IEEE Electron Device Letters. 36(3). 223–225. 28 indexed citations
11.
Lanford, W. A., Michelle M. Paquette, Anthony N. Caruso, et al.. (2015). Nuclear reaction analysis for H, Li, Be, B, C, N, O and F with an RBS check. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 371. 211–215. 30 indexed citations
12.
Koh, Donghyi, Todd W. Hudnall, Christopher W. Bielawski, et al.. (2014). Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer. Applied Physics Letters. 104(16). 163502–163502. 7 indexed citations
13.
14.
Koh, Donghyi, J. Yum, Sanjay K. Banerjee, et al.. (2014). Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applications. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(3). 23 indexed citations
15.
Kim, Tae‐Woo, Donghyi Koh, Hyuk-Min Kwon, et al.. (2014). In0.7Ga0.3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of ∼60 mV/dec. Applied Physics Express. 7(7). 74201–74201. 5 indexed citations
16.
Koh, Donghyi, J. Yum, D. Ferrer, et al.. (2012). Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices. 51. 163–166. 1 indexed citations
17.
Koh, Donghyi, Richard J. Hill, Ming Hung Wong, et al.. (2012). ETB-QW InAs MOSFET with scaled body for improved electrostatics. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 32.3.1–32.3.4. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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