M. Ramón

485 total citations
12 papers, 400 citations indexed

About

M. Ramón is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Ramón has authored 12 papers receiving a total of 400 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Ramón's work include Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). M. Ramón is often cited by papers focused on Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). M. Ramón collaborates with scholars based in United States, Mexico and India. M. Ramón's co-authors include D. Roan, J. Baker, B. E. White, Philip J. Tobin, Dina H. Triyoso, D. Werho, L.B. La, R. Gregory, R. Garcia and J. Kulik and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Ramón

12 papers receiving 375 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Ramón United States 10 377 189 46 34 21 12 400
L.B. La United States 7 399 1.1× 170 0.9× 48 1.0× 42 1.2× 10 0.5× 13 413
Konstantina Iordanidou Belgium 14 189 0.5× 397 2.1× 86 1.9× 52 1.5× 28 1.3× 28 425
Zhonghui Xu China 12 244 0.6× 358 1.9× 76 1.7× 41 1.2× 35 1.7× 30 423
V. V. Khomyak Ukraine 14 261 0.7× 320 1.7× 38 0.8× 79 2.3× 16 0.8× 32 363
L. Vaillant Cuba 9 363 1.0× 425 2.2× 47 1.0× 35 1.0× 13 0.6× 15 452
Ziyu Hu China 6 185 0.5× 332 1.8× 68 1.5× 53 1.6× 16 0.8× 11 379
Thomas A. Empante United States 5 162 0.4× 296 1.6× 65 1.4× 34 1.0× 43 2.0× 5 335
K. Santhosh Kumar India 10 329 0.9× 327 1.7× 82 1.8× 25 0.7× 12 0.6× 22 367
Myungchul Oh South Korea 9 118 0.3× 175 0.9× 55 1.2× 38 1.1× 22 1.0× 30 234
M. Tsuji Japan 7 418 1.1× 396 2.1× 82 1.8× 28 0.8× 14 0.7× 8 452

Countries citing papers authored by M. Ramón

Since Specialization
Citations

This map shows the geographic impact of M. Ramón's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Ramón with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Ramón more than expected).

Fields of papers citing papers by M. Ramón

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Ramón. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Ramón. The network helps show where M. Ramón may publish in the future.

Co-authorship network of co-authors of M. Ramón

This figure shows the co-authorship network connecting the top 25 collaborators of M. Ramón. A scholar is included among the top collaborators of M. Ramón based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Ramón. M. Ramón is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
1.
Ramón, M., Erwann Durand, Karlina García‐Sosa, & Luis M. Peña-Rodrı́guez. (2023). Exploring the potential of deep eutectic solvents (DES) in bioactive natural product research: from DES to NaDES, THEDES, and beyond. SHILAP Revista de lepidopterología. 5. e28–e28. 8 indexed citations
2.
Ferrer, D., Samaresh Guchhait, Chris M. Corbet, et al.. (2011). Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets. Journal of Applied Physics. 110(1). 10 indexed citations
3.
Oh, Jungwoo, et al.. (2010). High-Mobility TaN/$\hbox{Al}_{2}\hbox{O}_{3}$/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer. IEEE Electron Device Letters. 14 indexed citations
4.
Shahrjerdi, Davood, Junghyo Nah, Bahman Hekmatshoar, et al.. (2010). Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric. Applied Physics Letters. 97(21). 21 indexed citations
5.
Shahrjerdi, Davood, et al.. (2008). Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric. Applied Physics Letters. 92(20). 26 indexed citations
6.
Thean, Aaron, L. Prabhu, Victor Vartanian, et al.. (2006). Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations.. 51. 509–512. 16 indexed citations
7.
Kalpat, S., Hsing‐Huang Tseng, M. Ramón, et al.. (2005). BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments. IEEE Transactions on Device and Materials Reliability. 5(1). 26–35. 20 indexed citations
8.
Triyoso, Dina H., M. Ramón, R. I. Hegde, et al.. (2005). Physical and Electrical Characteristics of HfO[sub 2] Gate Dielectrics Deposited by ALD and MOCVD. Journal of The Electrochemical Society. 152(3). G203–G203. 26 indexed citations
9.
Triyoso, Dina H., R. I. Hegde, Jennifer E. Grant, et al.. (2004). Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(4). 2121–2127. 56 indexed citations
10.
Triyoso, Dina H., D. Roan, M. Ramón, et al.. (2004). Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]. Journal of The Electrochemical Society. 151(10). F220–F220. 148 indexed citations
11.
Edwards, N. V., D. Roan, R. Gregory, et al.. (2003). HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium. Journal of The Electrochemical Society. 150(4). F67–F67. 53 indexed citations
12.
Rao, R. A., R. Muralidhar, M. Sadd, et al.. (2003). Hybrid Silicon Nanocrystal Silicon Nitride Memory. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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