Mark Raymond

542 citations

29 papers · 333 indexed · h-index 12

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in ⓘ

Electrical and Electronic Engineering 20
- Semiconductor materials and devices 17
- Advancements in Semiconductor Devices and Circuit Design 6
Materials Chemistry 11
- Ferroelectric and Piezoelectric Materials 6
- Electronic and Structural Properties of Oxides 5

Co-authors: Vasantha R. W. Amarakoon (1 shared paper)Dina H. Triyoso (3 shared papers)Vimal Kamineni (4 shared papers)Rama I. Hegde (2 shared papers)Ahmet S. Özcan (3 shared papers)Stefan Zollner (3 shared papers)Hemant Dixit (2 shared papers)Phil Oldiges (2 shared papers)
Journals: IEEE Electron Device Letters (2 papers)Journal of the American Ceramic Society (2 papers)Thin Solid Films (2 papers)Microelectronic Engineering (2 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2 papers)
Partner nations: United States Canada United Kingdom

In The Last Decade

Mark Raymond

27 papers receiving 312 citations

Peers

Countries citing papers authored by Mark Raymond

Since Specialization

Citations

This map shows the geographic impact of Mark Raymond's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark Raymond with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark Raymond more than expected).

Fields of papers citing papers by Mark Raymond

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mark Raymond. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark Raymond. The network helps show where Mark Raymond may publish in the future.

Co-authors

The 25 scholars most cited alongside Mark Raymond, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Mark Raymond Line = papers co-authored together Mark Raymond links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 29 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology IEEE Electron Device Letters ·Hiroaki Niimi, Zuoguang Liu, Oleg Gluschenkov, Shogo Mochizuki, Jody Fronheiser, Juntao Li, J. Demarest, Chen Zhang, Bei Liu, Jie Yang, Mark Raymond, Bala Haran, Huiming Bu, Tenko Yamashita	2016	47
2	Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study Journal of Applied Physics ·Nicholas A. Lanzillo, Hemant Dixit, Erik Milosevic, Chengyu Niu, Adra Carr, Phil Oldiges, Mark Raymond, Jin Cho, T. Standaert, Vimal Kamineni	2018	31
3	Improved Electrical Properties of ALD $\hbox{Hf}_{x} \hbox{Zr}_{1 - x}\hbox{O}_{2}$ Dielectrics Deposited on Ultrathin PVD Zr Underlayer IEEE Electron Device Letters ·Dina H. Triyoso, Rama I. Hegde, Jack Jiang, J. K. Schaeffer, Mark Raymond	2008	25
4	Microstructure and Electrical Properties of Chemically Prepared Nb ₂ O ₅ ‐Doped SrTiO ₃ Ceramics Journal of the American Ceramic Society ·Mark Raymond, Vasantha R. W. Amarakoon	1990	20
5	Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices Thin Solid Films ·N. Loubet, Thomas Adam, Mark Raymond, Qing Liu, Kangguo Cheng, Raghavasimhan Sreenivasan, A. Reznicek, Prasanna Khare, Walter Kleemeier, Vamsi Paruchuri, B. Doris, Ron Sampson	2011	18
6	Extreme-low k porous pSiCOH dielectrics prepared by PECVD Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Han You, Petra Mennell, Matthew Shoudy, Devika Sil, D. Dorman, S. A. Cohen, E. Liniger, T. M. Shaw, Tsong-Lin Leo, D. Canaperi, Mark Raymond, Anita Madan, A. Grill	2017	16
7	Efficacy of a New Home Treatment Device for Benign Paroxysmal Positional Vertigo Archives of Otolaryngology - Head and Neck Surgery ·Matthew Bromwich, Brian Hughes, Mark Raymond, Sydney Sukerman, Lorne Parnes	2010	15
8	Compositional dependence of the optical conductivity of Ni1−xPtx alloys (0<x<0.25) determined by spectroscopic ellipsometry Thin Solid Films ·Lina Abdallah, Stefan Zollner, C. Lavoie, Ahmet S. Özcan, Mark Raymond	2013	15
9	Oxygen vacancy defects in tantalum pentoxide: a density functional study Microelectronic Engineering ·Rampi Ramprasad, M. Sadd, Doug Roberts, Tom Remmel, Mark Raymond, E. Luckowski, S. Kalpat, Carole Barron, Mel Miller	2003	14
10	Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond Xunyuan Zhang, Huai Huang, R. Patlolla, Frank W. Mont, Xuan Lin, Mark Raymond, Catherine B. Labelle, E. Todd Ryan, D. Canaperi, Theodore E. Standaert, T. Spooner, Griselda Bonilla, D. Edelstein	2017	14
11	The Emergence of Contention in Global Internet Governance SSRN Electronic Journal ·Samantha Bradshaw, Laura DeNardis, Fen Osler Hampson, Eric Jardine, Mark Raymond	2015	13
12	Middle of line RC performance study at the 7 nm node Susan Fan, James Hsueh-Chung Chen, Vimal Kamineni, Xunyuan Zhang, Mark Raymond, Catherine B. Labelle	2017	12
13	First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance IEEE Transactions on Electron Devices ·Hemant Dixit, Chengyu Niu, Mark Raymond, Vimal Kamineni, R. K. Pandey, Aniruddha Konar, Jody Fronheiser, Adra Carr, Phil Oldiges, Praneet Adusumilli, Nicholas A. Lanzillo, Xin Miao, Bhagawan Sahu, F. Bénistant	2017	11
14	Links between Electrical and Optical Fatigue in Pb (Zr,Ti)O ₃ Thin Films Journal of the American Ceramic Society ·W. L. Warren, Duane Dimos, Husam N. Alshareef, Mark Raymond, Bruce A. Turtle, G. E. Pike	1996	11
15	Mechanism(s) for the Suppression of the Switchable Polarization in PZT and BaTiO₃ MRS Proceedings ·W. L. Warren, Duane Dimos, Bruce A. Tuttle, G. E. Pike, Mark Raymond, R.D. Nasby, R. Ramesh, Joseph T. Evans	1994	9
16	Optical conductivity of Ni1 − xPtx alloys (0<x<0.25) from 0.76 to 6.6 eV AIP Advances ·Lina Abdallah, Tarek Tawalbeh, Igor Vasiliev, Stefan Zollner, C. Lavoie, Ahmet S. Özcan, Mark Raymond	2014	9
17	X-ray metrology for high-k atomic layer deposited HfxZr1−xO2 films Microelectronic Engineering ·Jesus Gallegos, Dina H. Triyoso, Mark Raymond	2007	7
18	The front end readout system for the T2K-ND280 detectors Antonin Vacheret, S. Greenwood, Matt Noy, Mark Raymond, A. Weber	2007	7
19	Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability Zuoguang Liu, Oleg Gluschenkov, Hiroaki Niimi, Bei Liu, Juntao Li, J. Demarest, Shogo Mochizuki, Praneet Adusumilli, Mark Raymond, Adra Carr, Shaoyin Chen, Yun Wang, Hemanth Jagannathan, Tenko Yamashita	2017	7
20	CBC3: a CMS microstrip readout ASIC with logic for track-trigger modules at HL-LHC CERN Bulletin ·M. Prydderch, S. Bell, D. Braga, L. Jones, M. Key-Charriere, George Auzinger, J. Borg, G. Hall, M. Pesaresi, Mark Raymond, Kirika UCHIDA, J. Goldstein, S. Seif El Nasr	2018	7

About Mark Raymond

Mark Raymond is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 29 papers that have together received 333 indexed citations. Recurring topics across this work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers), Semiconductor materials and interfaces (6 papers), Ferroelectric and Piezoelectric Materials (6 papers), Electronic and Structural Properties of Oxides (5 papers), Copper Interconnects and Reliability (4 papers), Particle Detector Development and Performance (3 papers) and Acoustic Wave Resonator Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (236 citations), Electronic, Optical and Magnetic Materials (74 citations), Atomic and Molecular Physics, and Optics (74 citations), Materials Chemistry (108 citations) and Neurology (13 citations). Mark Raymond has collaborated with scholars based in United States, Canada and United Kingdom. Frequent co-authors include Vasantha R. W. Amarakoon, Dina H. Triyoso, Vimal Kamineni, Rama I. Hegde, Ahmet S. Özcan, Stefan Zollner, Hemant Dixit, Phil Oldiges, J. Demarest and Nicholas A. Lanzillo. Their work appears in journals such as IEEE Electron Device Letters, Journal of the American Ceramic Society, Thin Solid Films, Microelectronic Engineering and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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