Mark Raymond

542 total citations
29 papers, 333 citations indexed

About

Mark Raymond is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Mark Raymond has authored 29 papers receiving a total of 333 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Mark Raymond's work include Semiconductor materials and devices (17 papers), Semiconductor materials and interfaces (6 papers) and Ferroelectric and Piezoelectric Materials (6 papers). Mark Raymond is often cited by papers focused on Semiconductor materials and devices (17 papers), Semiconductor materials and interfaces (6 papers) and Ferroelectric and Piezoelectric Materials (6 papers). Mark Raymond collaborates with scholars based in United States, Canada and United Kingdom. Mark Raymond's co-authors include Vasantha R. W. Amarakoon, Dina H. Triyoso, Vimal Kamineni, Rama I. Hegde, Jody Fronheiser, C. Lavoie, Hemant Dixit, Nicholas A. Lanzillo, Adra Carr and Stefan Zollner and has published in prestigious journals such as Journal of Applied Physics, Journal of the American Ceramic Society and IEEE Transactions on Electron Devices.

In The Last Decade

Mark Raymond

27 papers receiving 312 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Mark Raymond United States 12 236 108 74 74 43 29 333
B. L. Yang Hong Kong 11 282 1.2× 130 1.2× 44 0.6× 37 0.5× 24 0.6× 24 335
Shaoliang Wang China 10 121 0.5× 149 1.4× 24 0.3× 65 0.9× 59 1.4× 36 241
Zheng Liang China 11 250 1.1× 150 1.4× 133 1.8× 89 1.2× 40 0.9× 46 337
Hongxia Guo China 13 610 2.6× 166 1.5× 31 0.4× 66 0.9× 33 0.8× 121 709
Thomas Hofmann Germany 7 121 0.5× 67 0.6× 27 0.4× 20 0.3× 39 0.9× 32 271
Young‐Moon Yu South Korea 11 278 1.2× 259 2.4× 116 1.6× 29 0.4× 28 0.7× 39 390
James E. Burnette United States 8 206 0.9× 137 1.3× 164 2.2× 93 1.3× 29 0.7× 19 317
J. John India 10 182 0.8× 117 1.1× 42 0.6× 33 0.4× 135 3.1× 23 286
Samiye Matloub Iran 11 307 1.3× 154 1.4× 115 1.6× 32 0.4× 65 1.5× 60 388

Countries citing papers authored by Mark Raymond

Since Specialization
Citations

This map shows the geographic impact of Mark Raymond's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark Raymond with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark Raymond more than expected).

Fields of papers citing papers by Mark Raymond

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mark Raymond. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark Raymond. The network helps show where Mark Raymond may publish in the future.

Co-authorship network of co-authors of Mark Raymond

This figure shows the co-authorship network connecting the top 25 collaborators of Mark Raymond. A scholar is included among the top collaborators of Mark Raymond based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Mark Raymond. Mark Raymond is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lanzillo, Nicholas A., Hemant Dixit, Erik Milosevic, et al.. (2018). Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study. Journal of Applied Physics. 123(15). 31 indexed citations
2.
Gluschenkov, Oleg, Bei Liu, Juntao Li, et al.. (2017). Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability. T212–T213. 7 indexed citations
3.
You, Han, Devika Sil, S. A. Cohen, et al.. (2017). Extreme-low k porous pSiCOH dielectrics prepared by PECVD. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 36(1). 16 indexed citations
4.
Dixit, Hemant, Mark Raymond, Vimal Kamineni, et al.. (2017). First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance. IEEE Transactions on Electron Devices. 64(9). 3775–3780. 11 indexed citations
5.
Gluschenkov, Oleg, Jody Fronheiser, Juntao Li, et al.. (2016). Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology. IEEE Electron Device Letters. 37(11). 1371–1374. 47 indexed citations
6.
Kim, Jiseok, Huifeng Li, Mark Raymond, et al.. (2015). Specific contact resistivity of n-type Si and Ge M-S and M-I-S contacts. 33. 234–237. 6 indexed citations
7.
Bradshaw, Samantha, Laura DeNardis, Fen Osler Hampson, Eric Jardine, & Mark Raymond. (2015). The Emergence of Contention in Global Internet Governance. SSRN Electronic Journal. 13 indexed citations
8.
Nagumo, Toshiharu, Thomas Adam, Qing Liu, et al.. (2013). Optimization of SiC:P Raised Source Drain Epitaxy for Planar 20nm Fully Depleted SOI MOSFET Structures. ECS Transactions. 50(9). 533–542. 1 indexed citations
9.
Loubet, N., Thomas Adam, Mark Raymond, et al.. (2011). Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices. Thin Solid Films. 520(8). 3149–3154. 18 indexed citations
10.
Bromwich, Matthew, et al.. (2010). Efficacy of a New Home Treatment Device for Benign Paroxysmal Positional Vertigo. Archives of Otolaryngology - Head and Neck Surgery. 136(7). 682–682. 15 indexed citations
11.
Schaeffer, J., Mark Raymond, D. C. Gilmer, et al.. (2008). Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes. ECS Transactions. 16(5). 3–10.
12.
Triyoso, Dina H., et al.. (2008). Improved Electrical Properties of ALD $\hbox{Hf}_{x} \hbox{Zr}_{1 - x}\hbox{O}_{2}$ Dielectrics Deposited on Ultrathin PVD Zr Underlayer. IEEE Electron Device Letters. 29(1). 57–59. 25 indexed citations
13.
Greenwood, S., et al.. (2007). The front end readout system for the T2K-ND280 detectors. 1984–1991. 7 indexed citations
14.
Triyoso, Dina H., et al.. (2007). X-ray metrology for high-k atomic layer deposited HfxZr1−xO2 films. Microelectronic Engineering. 85(1). 49–53. 7 indexed citations
15.
Raymond, Mark, et al.. (2006). Hole-Trapping in ATiO3, (A = Ba, Sr, Ca). Ferroelectrics. 331(1). 43–51. 6 indexed citations
16.
Bainbridge, R., Mark Raymond, P. M. W. French, G. Hall, & P. Barrillon. (2005). Final Results from the APV25 Production Wafer Testing. CERN Document Server (European Organization for Nuclear Research). 3 indexed citations
17.
Ramprasad, Rampi, et al.. (2003). Oxygen vacancy defects in tantalum pentoxide: a density functional study. Microelectronic Engineering. 69(2-4). 190–194. 14 indexed citations
18.
Warren, W. L., et al.. (1996). Links between Electrical and Optical Fatigue in Pb (Zr,Ti)O 3 Thin Films. Journal of the American Ceramic Society. 79(6). 1714–1716. 11 indexed citations
19.
Warren, W. L., Duane Dimos, Bruce A. Tuttle, et al.. (1994). Mechanism(s) for the Suppression of the Switchable Polarization in PZT and BaTiO3. MRS Proceedings. 361. 9 indexed citations
20.
Raymond, Mark & Vasantha R. W. Amarakoon. (1990). Microstructure and Electrical Properties of Chemically Prepared Nb 2 O 5 ‐Doped SrTiO 3 Ceramics. Journal of the American Ceramic Society. 73(5). 1308–1311. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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