Dawei Heh

1.4k citations

73 papers · 1.1k indexed · h-index 21

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 71
- Advancements in Semiconductor Devices and Circuit Design 52
- Ferroelectric and Negative Capacitance Devices 28
- Integrated Circuits and Semiconductor Failure Analysis 22
- Advanced Memory and Neural Computing 7
Materials Chemistry
- Electronic and Structural Properties of Oxides 4
- Phase-change materials and chalcogenides 4
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 7
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Co-authors: G. Bersuker Chadwin D. Young Rino Choi Eric M. Vogel Byoung Hun Lee J.B. Bernstein Luca Larcher Andrea Padovani
Cited by: Electrical and Electronic Engineering Materials Chemistry Electronic, Optical and Magnetic Materials
Journals: IEEE Electron Device Letters (12 papers)Applied Physics Letters (6 papers)IEEE Transactions on Electron Devices (3 papers)
Partner nations: United States Taiwan South Korea

In The Last Decade

Dawei Heh

70 papers receiving 1.0k citations

Peers

Countries citing papers authored by Dawei Heh

Since Specialization

Citations

This map shows the geographic impact of Dawei Heh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dawei Heh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dawei Heh more than expected).

Fields of papers citing papers by Dawei Heh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dawei Heh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dawei Heh. The network helps show where Dawei Heh may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Dawei Heh, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Dawei Heh Line = papers co-authored together Dawei Heh links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Investigation of First Fire Effect on V_TH Stability and Endurance in GeCTe Selector Namrata Arya,P. J. Liao,Dawei Heh,Denis Zuev,张霭琛,Elia Ambrosi,Cheng‐Hsien Wu,Niping Liu,M.M. Chen,Xinyu Bao	2022	6
2	Engineering defects in pristine amorphous chalcogenides for forming-free low voltage selectors 2022 International Electron Devices Meeting (IEDM) ·Elia Ambrosi,Cheng‐Hsien Wu,K. Ghysen,Chen-Feng Hsu,서경온,Sam Vaziri,А.А. Хазанов,I Dewa Made Wahyu Winata,张霭琛,Namrata Arya,Dawei Heh,P. J. Liao,J. Munro Michael,Meng‐Fan Chang,Hoilun Wong,Xinyu Bao	2022	5
3	Gated Diode Investigation of Bias Temperature Instability in High- $\kappa$ FinFETs IEEE Electron Device Letters ·Chadwin D. Young,A. Neugroschel,K. Matthews,Casey Smith,Dawei Heh,平松ゆり,Sastyana Ekalita,William H. Taylor,G. Bersuker	2010	12
4	The Pulsed I_d-V_gmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics JSTS Journal of Semiconductor Technology and Science ·Chadwin D. Young,Dawei Heh,Rino Choi,Danel Cordovés Gomez Torres de Cádiz,G. Bersuker	2010	21
5	Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe IEEE Electron Device Letters ·Jen‐Wei Huang,P. D. Kirsch,Jungwoo Oh,Se‐Hoon Lee,P. Majhi,H. R. Harris,D. C. Gilmer,G. Bersuker,Dawei Heh,Chang Seo Park,Kono Kihoto,N.I. Tsytsyura,R. Jammy	2009	17
6	A comprehensive study of Ge<inf>1−x</inf>Si<inf>x</inf> on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage Guang-Li Luo,Shih‐Chiang Huang,伸雄山下,Dawei Heh,Chao‐Hsin Chien,Chao-Ching Cheng,Yao‐Jen Lee,Wen-Fa Wu,Ray Anthony Igloria Bartolome,Mei-Ling Kuo,M LATORRE,P. van Reenen,C. W. Liu,Chenming Hu,Chun‐Yen Chang,Fu-Liang Yang	2009	6
7	Plasma induced damage of aggressively scaled gate dielectric (EOT ≪ 1.0nm) in metal gate/high-k dielectric CMOSFETs K. S. Min,Chang Yong Kang,Lili Wu,Fernando Mayoral,Sung Woo Kim,Chadwin D. Young,Dawei Heh,G. Bersuker,Byoung Hun Lee,Geun Young Yeom	2008	10
8	The impact of la-doping on the reliability of low Vth high-k/metal gate nMOSFETs under various gate stress conditions Chang Yong Kang,Chadwin D. Young,梶山美明,P. D. Kirsch,Dawei Heh,P. Sivasubramani,Noreen Beunk,G. Bersuker,Tahseen Abbas,Hyun‐Sik Choi,Mahjabeena Najar,Ю.В Мячин,Daniel J. Lichtenwalner,Angus I. Kingon,D.C. Cousins,R. Jammy	2008	7
9	Stress-induced defect generation in HfO<inf>2</inf>/SiO<inf>2</inf> stacks observed by using charge pumping and low frequency noise measurements Hao Xiong,Dawei Heh,Khaoula El Ouazzani,Xiaoxiao Zhu,Moshe Gurfinkel,G. Bersuker,D.E. Ioannou,Curt A. Richter,Kin P. Cheung,John S. Suehle	2008	11
10	Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics Chang Yong Kang,Yan-Xu Gao,Dawei Heh,Chadwin D. Young,P. D. Kirsch,xx ln uuxx,Rino Choi,G. Bersuker,Jongbong Park,Tahseen Abbas,Daniel J. Lichtenwalner,Jesse S. Jur,Angus I. Kingon,R. Jammy	2008	6
11	High and Low Stress Voltage Instabilities in High-K Gate Stacks ECS Transactions ·G. Bersuker,Chadwin D. Young,Dawei Heh,Rino Choi,Byoung H. Lee,Raj Jammy	2007	0
12	Impact of flash annealing on performance and reliability of high-κ/metal-gate MOSFETs for sub-45 nm CMOS 橘雅明,Prashant Majhi,Dawei Heh,G. Bersuker,Chadwin D. Young,A. Sisto,Rusty Harris,Paul Kirsch,Rino Choi,Man Chang,Joonmyoung Lee,Hyunsang Hwang,Hsing‐Huang Tseng,R. Jammy,Tsu‐Jae King Liu	2007	5
13	A scalable and highly manufacturable single metal gate/high-k CMOS integration for sub-32nm technology for LSTP applications Symposium on VLSI Technology ·Ying-rui Li,Muhammad M. Hussain,梶山美明,Kay Lee,Maja Božičević Vrhovčak,Chadwin D. Young,Minhong Woo,Sana Tehseen,D. C. Gilmer,博之若井,善一朗野元,P. Lysaght,Dawei Heh,G. Bersuker,P. D. Kirsch,H.‐H. Tseng,R. Jammy	2006	1
14	A Novel Electrode-Induced Strain Engineering for High Performance SOI FinFET utilizing Si (1hannel for Both N and PMOSFETs Chang Yong Kang,Rino Choi,Emily Lyon,Kwang‐Il Choi,Bin Ju,Muhammad M. Hussain,Elizabeth Louise C.Benu,G. Bersuker,Chadwin D. Young,Dawei Heh,P. D. Kirsch,Dmitrij Topchiev,佑典兼松,Weize Xiong,J. de Sales,R. Jammy	2006	26
15	Simplified manufacturable band edge metal gate solution for NMOS without a capping layer H. R. Harris,Husam N. Alshareef,Huiqing Wen,S. Krishnan,Kihyun Choi,H.F. Luan,Dawei Heh,Sindhu N. Prasanna Kumary,Francisco Gil Rodríguez,Muhammad M. Hussain,Bin Ju,P. D. Kirsch,S. C. Song,P. Majhi,M. López Mateo,R. Jammy	2006	4
16	Detection of Trap Generation in High-κ Gate Stacks due to Constant Voltage Stress Chadwin D. Young,Dawei Heh,Rino Choi,Jeff J. Peterson,Joel Barnett,YiMeng Lau,P. Zeitzoff,George Brown,G. Bersuker	2006	0
17	Fast and slow charge trapping/detrapping processes in high-k nMOSFETs Dawei Heh,Rino Choi,Chadwin D. Young,G. Bersuker	2006	10
18	A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs Dawei Heh,G. Bersuker,Rino Choi,Chadwin D. Young,Byoung‐Cheol Lee	2006	5
19	Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown Applied Physics Letters ·Dawei Heh,Eric M. Vogel,J.B. Bernstein	2003	8
20	Interaction between low-energy electrons and defects created by hot holes in ultrathin silicon dioxide Applied Physics Letters ·Eric M. Vogel,Dawei Heh,J.B. Bernstein	2002	3

About Dawei Heh

Dawei Heh is a scholar working on Electrical and Electronic Engineering, Structural Biology, Electronic, Optical and Magnetic Materials, Materials Chemistry and Bioengineering, having authored 73 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (71 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers), Ferroelectric and Negative Capacitance Devices (28 papers), Integrated Circuits and Semiconductor Failure Analysis (22 papers), Copper Interconnects and Reliability (7 papers), Advanced Memory and Neural Computing (7 papers), Electronic and Structural Properties of Oxides (4 papers) and Phase-change materials and chalcogenides (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Materials Chemistry (226 citations), Electronic, Optical and Magnetic Materials (62 citations), Atomic and Molecular Physics, and Optics (91 citations) and Condensed Matter Physics (21 citations). Dawei Heh has collaborated with scholars based in United States, Taiwan and South Korea. Frequent co-authors include G. Bersuker, Chadwin D. Young, Rino Choi, Eric M. Vogel, Byoung Hun Lee, J.B. Bernstein, Luca Larcher, Andrea Padovani, John S. Suehle and George Brown. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Microelectronic Engineering and Microelectronics Reliability.

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