Dawei Heh

1.4k total citations
73 papers, 1.1k citations indexed

About

Dawei Heh is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Dawei Heh has authored 73 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 9 papers in Electronic, Optical and Magnetic Materials and 9 papers in Materials Chemistry. Recurrent topics in Dawei Heh's work include Semiconductor materials and devices (71 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers) and Ferroelectric and Negative Capacitance Devices (28 papers). Dawei Heh is often cited by papers focused on Semiconductor materials and devices (71 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers) and Ferroelectric and Negative Capacitance Devices (28 papers). Dawei Heh collaborates with scholars based in United States, Taiwan and South Korea. Dawei Heh's co-authors include G. Bersuker, Chadwin D. Young, Rino Choi, Eric M. Vogel, Byoung Hun Lee, J.B. Bernstein, Luca Larcher, Andrea Padovani, John S. Suehle and George Brown and has published in prestigious journals such as Nano Letters, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

Dawei Heh

70 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Dawei Heh United States 21 1.1k 226 91 62 59 73 1.1k
T. Nigam United States 22 1.3k 1.2× 191 0.8× 80 0.9× 85 1.4× 38 0.6× 58 1.4k
M. Denais France 14 1.4k 1.3× 148 0.7× 70 0.8× 38 0.6× 30 0.5× 37 1.4k
Richard G. Southwick United States 16 961 0.9× 141 0.6× 84 0.9× 57 0.9× 67 1.1× 62 980
Lars‐Åke Ragnarsson Belgium 20 1.3k 1.2× 217 1.0× 134 1.5× 66 1.1× 71 1.2× 97 1.4k
E. Kiewra United States 14 684 0.6× 85 0.4× 206 2.3× 33 0.5× 66 1.1× 37 704
Mehdi Saremi United States 17 750 0.7× 297 1.3× 124 1.4× 37 0.6× 144 2.4× 27 866
G. Ribes France 14 924 0.8× 121 0.5× 54 0.6× 55 0.9× 29 0.5× 49 940
I. Kunishima Japan 12 434 0.4× 219 1.0× 228 2.5× 88 1.4× 109 1.8× 36 541
S.-H. Lo United States 7 909 0.8× 234 1.0× 111 1.2× 52 0.8× 44 0.7× 16 933
B. Guillaumot France 17 1.1k 1.0× 220 1.0× 114 1.3× 48 0.8× 131 2.2× 65 1.1k

Countries citing papers authored by Dawei Heh

Since Specialization
Citations

This map shows the geographic impact of Dawei Heh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dawei Heh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dawei Heh more than expected).

Fields of papers citing papers by Dawei Heh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dawei Heh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dawei Heh. The network helps show where Dawei Heh may publish in the future.

Co-authorship network of co-authors of Dawei Heh

This figure shows the co-authorship network connecting the top 25 collaborators of Dawei Heh. A scholar is included among the top collaborators of Dawei Heh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dawei Heh. Dawei Heh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liao, P. J., et al.. (2022). Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe Selector. 4A.3–1. 6 indexed citations
2.
Ambrosi, Elia, Cheng‐Hsien Wu, Chen-Feng Hsu, et al.. (2022). Engineering defects in pristine amorphous chalcogenides for forming-free low voltage selectors. 2022 International Electron Devices Meeting (IEDM). 18.7.1–18.7.4. 5 indexed citations
3.
Young, Chadwin D., A. Neugroschel, K. Matthews, et al.. (2010). Gated Diode Investigation of Bias Temperature Instability in High- $\kappa$ FinFETs. IEEE Electron Device Letters. 31(7). 653–655. 12 indexed citations
4.
Young, Chadwin D., et al.. (2010). The Pulsed Id-Vgmethodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics. JSTS Journal of Semiconductor Technology and Science. 10(2). 79–99. 21 indexed citations
5.
Huang, Jen‐Wei, P. D. Kirsch, Jungwoo Oh, et al.. (2009). Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe. IEEE Electron Device Letters. 30(3). 285–287. 17 indexed citations
6.
7.
Min, K. S., Chang Yong Kang, Sung Woo Kim, et al.. (2008). Plasma induced damage of aggressively scaled gate dielectric (EOT ≪ 1.0nm) in metal gate/high-k dielectric CMOSFETs. 723–724. 10 indexed citations
8.
Kang, Chang Yong, Chadwin D. Young, P. D. Kirsch, et al.. (2008). The impact of la-doping on the reliability of low Vth high-k/metal gate nMOSFETs under various gate stress conditions. 1–4. 7 indexed citations
9.
10.
Kang, Chang Yong, Dawei Heh, Chadwin D. Young, et al.. (2008). Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics. 663–664. 6 indexed citations
11.
Bersuker, G., Chadwin D. Young, Dawei Heh, et al.. (2007). High and Low Stress Voltage Instabilities in High-K Gate Stacks. ECS Transactions. 8(1). 99–103.
12.
Majhi, Prashant, Dawei Heh, G. Bersuker, et al.. (2007). Impact of flash annealing on performance and reliability of high-κ/metal-gate MOSFETs for sub-45 nm CMOS. 353–356. 5 indexed citations
13.
Hussain, Muhammad M., Chadwin D. Young, D. C. Gilmer, et al.. (2006). A scalable and highly manufacturable single metal gate/high-k CMOS integration for sub-32nm technology for LSTP applications. Symposium on VLSI Technology. 208–209. 1 indexed citations
14.
Kang, Chang Yong, Rino Choi, Kwang‐Il Choi, et al.. (2006). A Novel Electrode-Induced Strain Engineering for High Performance SOI FinFET utilizing Si (1hannel for Both N and PMOSFETs. 1–4. 26 indexed citations
15.
Harris, H. R., Husam N. Alshareef, Huiqing Wen, et al.. (2006). Simplified manufacturable band edge metal gate solution for NMOS without a capping layer. 1–4. 4 indexed citations
16.
Young, Chadwin D., Dawei Heh, Rino Choi, et al.. (2006). Detection of Trap Generation in High-κ Gate Stacks due to Constant Voltage Stress. 5. 1–2.
17.
Heh, Dawei, Rino Choi, Chadwin D. Young, & G. Bersuker. (2006). Fast and slow charge trapping/detrapping processes in high-k nMOSFETs. 120–124. 10 indexed citations
18.
Heh, Dawei, G. Bersuker, Rino Choi, Chadwin D. Young, & Byoung‐Cheol Lee. (2006). A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs. 44. 387–390. 5 indexed citations
19.
Heh, Dawei, Eric M. Vogel, & J.B. Bernstein. (2003). Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown. Applied Physics Letters. 82(19). 3242–3244. 8 indexed citations
20.
Vogel, Eric M., Dawei Heh, & J.B. Bernstein. (2002). Interaction between low-energy electrons and defects created by hot holes in ultrathin silicon dioxide. Applied Physics Letters. 80(18). 3343–3345. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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