R. Gregory

1.4k total citations
46 papers, 1.1k citations indexed

About

R. Gregory is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Gregory has authored 46 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Gregory's work include Semiconductor materials and devices (33 papers), Electronic and Structural Properties of Oxides (16 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). R. Gregory is often cited by papers focused on Semiconductor materials and devices (33 papers), Electronic and Structural Properties of Oxides (16 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). R. Gregory collaborates with scholars based in United States, France and United Kingdom. R. Gregory's co-authors include Dina H. Triyoso, Philip J. Tobin, B. E. White, Stefan Zollner, D. Roan, M. Passlack, Ravi Droopad, S. Samavedam, Alexander A. Demkov and R. I. Hegde and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

R. Gregory

44 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Gregory United States 18 988 542 164 162 86 46 1.1k
S. Samavedam United States 18 1.2k 1.3× 357 0.7× 199 1.2× 98 0.6× 77 0.9× 36 1.3k
G. B. Rayner United States 17 908 0.9× 676 1.2× 182 1.1× 122 0.8× 46 0.5× 35 1.1k
K. J. Hubbard United States 5 976 1.0× 678 1.3× 187 1.1× 188 1.2× 27 0.3× 6 1.1k
R. Nieh United States 23 2.2k 2.2× 779 1.4× 237 1.4× 235 1.5× 82 1.0× 43 2.3k
Shin’ichiro Kimura Japan 19 980 1.0× 462 0.9× 97 0.6× 185 1.1× 93 1.1× 47 1.1k
M. Eddrief France 16 483 0.5× 516 1.0× 221 1.3× 153 0.9× 29 0.3× 33 781
Sing-Pin Tay United States 13 642 0.6× 351 0.6× 142 0.9× 152 0.9× 51 0.6× 27 770
Harald B. Profijt Netherlands 10 1.2k 1.2× 773 1.4× 181 1.1× 175 1.1× 87 1.0× 17 1.3k
G. Pavia Italy 12 495 0.5× 358 0.7× 127 0.8× 89 0.5× 33 0.4× 46 658
F. Fillot France 13 613 0.6× 510 0.9× 65 0.4× 129 0.8× 65 0.8× 38 738

Countries citing papers authored by R. Gregory

Since Specialization
Citations

This map shows the geographic impact of R. Gregory's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Gregory with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Gregory more than expected).

Fields of papers citing papers by R. Gregory

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Gregory. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Gregory. The network helps show where R. Gregory may publish in the future.

Co-authorship network of co-authors of R. Gregory

This figure shows the co-authorship network connecting the top 25 collaborators of R. Gregory. A scholar is included among the top collaborators of R. Gregory based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Gregory. R. Gregory is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schaeffer, J., Mark Raymond, D. C. Gilmer, et al.. (2008). Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes. ECS Transactions. 16(5). 3–10.
2.
Bentmann, Hendrik, Alexander A. Demkov, R. Gregory, & Stefan Zollner. (2008). Electronic, optical, and surface properties of PtSi thin films. Physical Review B. 78(20). 28 indexed citations
3.
Luo, Xinhui, Alexander A. Demkov, Dina H. Triyoso, et al.. (2008). Combined experimental and theoretical study of thin hafnia films. Physical Review B. 78(24). 31 indexed citations
4.
Triyoso, Dina H., Rama I. Hegde, R. Gregory, et al.. (2007). Scaling of Hafnium-based High-k Dielectrics. MRS Proceedings. 996. 2 indexed citations
5.
Schaeffer, J., C. Capasso, R. Gregory, et al.. (2007). Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics. Journal of Applied Physics. 101(1). 41 indexed citations
6.
Holland, M., C.R. Stanley, Iain Thayne, et al.. (2007). GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(3). 1024–1028. 7 indexed citations
7.
Triyoso, Dina H., et al.. (2007). Physical and Electrical Properties of Atomic-Layer-Deposited Hf[sub x]Zr[sub 1−x]O[sub 2] with TEMAHf, TEMAZr, and Ozone. Journal of The Electrochemical Society. 155(1). H43–H43. 15 indexed citations
8.
Triyoso, Dina H., R. Gregory, J. Schaeffer, et al.. (2007). Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics. Journal of Applied Physics. 102(10). 20 indexed citations
9.
Triyoso, Dina H., Zhiyi Yu, R. Gregory, et al.. (2007). Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf6Ta2O17gate dielectrics. Journal of materials research/Pratt's guide to venture capital sources. 22(10). 2856–2862. 6 indexed citations
10.
Triyoso, Dina H., R. I. Hegde, D. Roan, et al.. (2006). Impact of Zr addition on properties of atomic layer deposited HfO2. Applied Physics Letters. 88(22). 76 indexed citations
11.
Triyoso, Dina H., et al.. (2006). Impact of film properties of atomic layer deposited HfO2 resulting from annealing with a TiN capping layer. Applied Physics Letters. 89(13). 50 indexed citations
12.
Triyoso, Dina H., R. I. Hegde, Stefan Zollner, et al.. (2005). Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition. Journal of Applied Physics. 98(5). 72 indexed citations
13.
Passlack, M., Ravi Droopad, K. Rajagopalan, et al.. (2005). High mobility NMOSFET structure with high-/spl kappa/ dielectric. IEEE Electron Device Letters. 26(10). 713–715. 68 indexed citations
14.
Adams, Daniel, Gerald F. Malgas, N. David Theodore, et al.. (2004). Effectiveness of reactive sputter-deposited Ta–N films as diffusion barriers for Ag metallization. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(5). 2345–2352. 14 indexed citations
15.
Passlack, M., et al.. (2003). Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs. Applied Physics Letters. 83(25). 5262–5264. 40 indexed citations
16.
Schaeffer, J., S. Samavedam, D. C. Gilmer, et al.. (2002). Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(1). 11–17. 85 indexed citations
17.
Zhang, Jiming, et al.. (1998). PVD Ti-Si-N Films Process Development for Copper Interconnect Applications. MRS Proceedings. 514. 1 indexed citations
18.
Jones, Robert E., P.D. Maniar, A. C. Campbell, et al.. (1995). Materials interactions in the integration of PZT ferroelectric capacitors. Integrated ferroelectrics. 6(1-4). 81–92. 17 indexed citations
19.
Jones, Robert E., et al.. (1994). Impact of A Ti Adhesion Layer on Pt/PZT/Pt Capacitors. MRS Proceedings. 361. 3 indexed citations
20.
Gregory, R., et al.. (1969). Electron beam addressed plasma display panel. Proceedings of the IEEE. 57(5). 805–806. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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