J. Schaeffer

1.4k citations

32 papers · 628 indexed · h-index 13

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 30
- Semiconductor materials and devices 28
- Advancements in Semiconductor Devices and Circuit Design 23
- Integrated Circuits and Semiconductor Failure Analysis 14
- Ferroelectric and Negative Capacitance Devices 5
- Advanced Memory and Neural Computing 2
- Thin-Film Transistor Technologies 2
Atomic and Molecular Physics, and Optics 4
- Semiconductor materials and interfaces 4

Co-authors: S. Samavedam Philip J. Tobin B. E. White L. R. C. Fonseca Yong Liang Dina H. Triyoso D. C. Gilmer C. Capasso
Journals: Journal of Applied Physics (4 papers)Applied Physics Letters (3 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Electron Device Letters (1 paper)Microelectronic Engineering (1 paper)
Partner nations: United States Germany France

In The Last Decade

J. Schaeffer

29 papers receiving 584 citations

Peers

Countries citing papers authored by J. Schaeffer

Since Specialization

Citations

This map shows the geographic impact of J. Schaeffer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Schaeffer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Schaeffer more than expected).

Fields of papers citing papers by J. Schaeffer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Schaeffer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Schaeffer. The network helps show where J. Schaeffer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Schaeffer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Schaeffer Line = papers co-authored together J. Schaeffer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Abstract 9819: Real World Data: Off-Label Metformin in Patients with Prediabetes is Associated with Improved Cardiovascular Outcomes Circulation ·Jaime Murillo, Milena Jastrow Ribett, H. Gordon Ward, J. Schaeffer, Keith Lee Keith Lee, S. H. Zhang, Qing Zhou, Jingyi Lu, 王馨馨	2021	2
2	Buried SiGe as a performance booster in n-channel FDSOI MOSFETs Solid-State Electronics ·P.A. Clifton, V. R. Saraph, Wenxiao Yang, Renée Graef, 享守山, Ryan Sporer, Rick Carter, J. Kluth, J. Schaeffer, Bich-Yen Nguyen, Дороничев В.Б., Nicolas Daval, W. Schwarzenbach, Salvador Busquets Artigas, Шамшатдинова А.Р., D.A. Mat Jelani	2019	1
3	Low Cost and Highly Manufacturable MOL/BEOL Constructs in 22FDSOI Technology for High Performance and Low Power Applications Matthew Hogan, E. Raeymackers, Letícia Batista Lacerda, Patrick J. Comiskey, Jeff Kim, Mohamad Suhaidi, Thomas Herrmann, В Г Безшейко, In-Gi Baek, Reshmi Maisnam, Rövşen ALİZADE, J. Schaeffer, M. Rashed, Anurag Mittal, Maria Prada Navarro, Martine Bodénant, Lorraine Beatriz Moreira, Shkumbin Lushaj, Ikuyo ONODERA-KUBOTA, L. Michalczuk	2018	3
4	Versatile technology modeling for 22FDX platform development El Mehdi Bazizi, Alban Zaka, Thomas Herrmann, (unknown), Li Jiang, Kassiani Lazari, S. Deb Roy, E. Nowak, G. Jonathan Kluth, P. Javorka, Angela T. McAuliffe, J. Mazurier, D.L. Harame, T. Kammler, Jan Hoentschel, J. Schaeffer, F. Bénistant, B. Rice	2017	5
5	(Invited) Challenges and Solutions for Future Internet-of-Things Semiconductor Technologies ECS Transactions ·J. Schaeffer	2016	1
6	Impact of precursors choice on characteristics of PEALD SiN for spacer applications Dina H. Triyoso, K. Hempel, W. A. Tomazic, Erin Winick, J. Schaeffer, 太郎一坂	2013	1
7	Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration ECS Journal of Solid State Science and Technology ·Dina H. Triyoso, K. Hempel, W. A. Tomazic, F.M. Heckendom, Erin Winick, M. Laušic, Abdul Jamil Abdullah, J. Schaeffer, Dirk Utess, 太郎一坂	2013	45
8	Taking the next step on advanced HKMG SOI technologies — From 32nm PD SOI volume production to 28nm FD SOI and beyond Μ. Horstmann, Jan Hoentschel, J. Schaeffer	2012	1
9	Strained SiGe Channels for Band-Edge PMOS Threshold Voltages With Metal Gates and High- $k$ Dielectrics IEEE Transactions on Electron Devices ·D. C. Gilmer, J. Schaeffer, William J. Taylor, C. Capasso, アユミタニムラ, Y. S. Kim, D. Tekleab, B. Winstead, S. Samavedam	2010	20
10	Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes ECS Transactions ·J. Schaeffer, Mark Raymond, D. C. Gilmer, R. Gregory, B. Taylor, Hartmut Sell, Dina H. Triyoso, Rama I. Hegde, S. Samavedam	2008	0
11	Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- <formula formulatype="inline"><tex>$k$</tex></formula>/Metal Gate Stack Device Reliability and Performance Enhancement IEEE Transactions on Electron Devices ·N.I. Tsytsyura, Philip J. Tobin, S. Kalpat, J. Schaeffer, Michael Ramon, L. R. C. Fonseca, Nadya Isachenko, R. I. Hegde, Dina H. Triyoso, Bian Zhiwei	2007	38
12	Oxidation of the Pt∕HfO2 interface: The role of the oxygen chemical potential Journal of Applied Physics ·الحاج مهلول, A. A. Knizhnik, A. A. Bagatur’yants, Б. В. Потапкин, L. R. C. Fonseca, M. W. Stoker, J. Schaeffer	2007	13
13	Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics Journal of Applied Physics ·J. Schaeffer, C. Capasso, R. Gregory, D. C. Gilmer, L. R. C. Fonseca, M. Raymond, M.S. Shotwell, M. Kottke, S. Samavedam, Philip J. Tobin, B. E. White	2007	41
14	On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics Journal of Applied Physics ·J. Schaeffer, D. C. Gilmer, S. Samavedam, M. Raymond, A. Haggag, S. Kalpat, 真鍋和, C. Capasso, B. E. White	2007	13
15	Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics Journal of Applied Physics ·Dina H. Triyoso, R. Gregory, J. Schaeffer, D. Werho, 潘玉婷, S. Marcus, G. D. Wilk	2007	20
16	Interface dipole and effective work function of Re in Re∕HfO2∕SiOx∕n-Si gate stack Applied Physics Letters ·Yong Liang, J. Curless, Clarence J. Tracy, D. C. Gilmer, J. Schaeffer, Dina H. Triyoso, P.J. Tobin	2006	25
17	Junction treatment for BOR-wire geometries J. Schaeffer, L.N. Medgyesi-Mitschang	2005	0
18	Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack H.‐H. Tseng, C. Capasso, J. Schaeffer, E.A. Hebert, Philip J. Tobin, D. C. Gilmer, Dina H. Triyoso, Michael Ramon, S. Kalpat, E. Luckowski, W. Taylor, Takayama Eri, Érick Soares dos Reis, R. I. Hegde, A. M. M. Upshaw, R. H. Busk, Ebrahim Hajghasemi, B. E. White	2005	29
19	Contributions to the effective work function of platinum on hafnium dioxide Applied Physics Letters ·J. Schaeffer, L. R. C. Fonseca, S. Samavedam, Yong Liang, Philip J. Tobin, B. E. White	2004	169
20	Investigations of Metal Gate Electrodes on HfO₂ Gate Dielectrics MRS Proceedings ·J. Schaeffer, S. Samavedam, L. R. C. Fonseca, C. Capasso, Érick Soares dos Reis, D. C. Gilmer, Chris Hobbs, E. Luckowski, R. Gregory, Glaucia da Silva Brito, Yong Liang, Karen Moore, L. Bichon, Bich-Yen Nguyen, P.J. Tobin, Bruce White	2004	4

About J. Schaeffer

J. Schaeffer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Endocrinology, Diabetes and Metabolism and Computational Mechanics, having authored 32 papers that have together received 628 indexed citations. Recurring topics across this work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Electronic and Structural Properties of Oxides (5 papers), Semiconductor materials and interfaces (4 papers), Advanced Memory and Neural Computing (2 papers) and Thin-Film Transistor Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (595 citations), Materials Chemistry (189 citations), Electronic, Optical and Magnetic Materials (69 citations), Atomic and Molecular Physics, and Optics (96 citations) and Mechanics of Materials (63 citations). J. Schaeffer has collaborated with scholars based in United States, Germany and France. Frequent co-authors include S. Samavedam, Philip J. Tobin, B. E. White, L. R. C. Fonseca, Yong Liang, Dina H. Triyoso, D. C. Gilmer, C. Capasso, R. Gregory and S. Kalpat. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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