P. Lysaght

884 total citations
27 papers, 420 citations indexed

About

P. Lysaght is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Surfaces, Coatings and Films. According to data from OpenAlex, P. Lysaght has authored 27 papers receiving a total of 420 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 5 papers in Surfaces, Coatings and Films. Recurrent topics in P. Lysaght's work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). P. Lysaght is often cited by papers focused on Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). P. Lysaght collaborates with scholars based in United States, Canada and Ireland. P. Lysaght's co-authors include G. Bersuker, Conan Weiland, Howard R. Huff, Joel Barnett, George Brown, Lyudmila V. Goncharova, Chadwin D. Young, P. Zeitzoff, R.W. Murto and Marc Ulrich and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

P. Lysaght

27 papers receiving 392 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Lysaght United States 13 341 138 86 47 31 27 420
S. Dreiner Germany 11 279 0.8× 114 0.8× 71 0.8× 9 0.2× 69 2.2× 40 346
Laurent Ottaviani France 12 400 1.2× 125 0.9× 87 1.0× 59 1.3× 4 0.1× 82 484
B. G. Svensson Sweden 13 465 1.4× 173 1.3× 148 1.7× 7 0.1× 14 0.5× 35 520
R. Schmitz Germany 10 400 1.2× 283 2.1× 55 0.6× 5 0.1× 80 2.6× 20 453
J. Grillenberger Germany 9 232 0.7× 106 0.8× 82 1.0× 17 0.4× 2 0.1× 33 293
G. Galvagno Italy 12 318 0.9× 56 0.4× 102 1.2× 4 0.1× 25 0.8× 35 377
Tadashi Serikawa Japan 11 340 1.0× 200 1.4× 54 0.6× 30 0.6× 3 0.1× 41 420
R. Gröetzschel Germany 12 200 0.6× 149 1.1× 151 1.8× 5 0.1× 8 0.3× 41 337
P. E. R. Nordquist United States 7 261 0.8× 67 0.5× 130 1.5× 6 0.1× 9 0.3× 21 301
W. Vandervorst Belgium 10 282 0.8× 103 0.7× 92 1.1× 6 0.1× 18 0.6× 21 331

Countries citing papers authored by P. Lysaght

Since Specialization
Citations

This map shows the geographic impact of P. Lysaght's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Lysaght with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Lysaght more than expected).

Fields of papers citing papers by P. Lysaght

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Lysaght. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Lysaght. The network helps show where P. Lysaght may publish in the future.

Co-authorship network of co-authors of P. Lysaght

This figure shows the co-authorship network connecting the top 25 collaborators of P. Lysaght. A scholar is included among the top collaborators of P. Lysaght based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Lysaght. P. Lysaght is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Walsh, Lee A., G. Hughes, Conan Weiland, et al.. (2014). Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy. Physical Review Applied. 2(6). 9 indexed citations
2.
Weiland, Conan, et al.. (2013). Passivation of In0.53Ga0.47As/ZrO2 interfaces by AlN atomic layer deposition process. Journal of Applied Physics. 114(3). 11 indexed citations
3.
Weiland, Conan, et al.. (2012). Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In0.53Ga0.47As/Al2O3 film systems. Applied Physics Letters. 101(6). 61602–61602. 23 indexed citations
4.
5.
Goncharova, Lyudmila V., Tingting Feng, T. Gustafsson, et al.. (2011). Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001). Physical Review B. 83(11). 26 indexed citations
6.
Rumaiz, Abdul K., G. Carini, D. P. Siddons, et al.. (2010). Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces. Applied Physics Letters. 97(24). 14 indexed citations
7.
8.
Goncharova, Lyudmila V., Özgür Çelık, Eric Garfunkel, et al.. (2007). Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si. AIP conference proceedings. 931. 324–328. 2 indexed citations
9.
Lucovsky, G., Hyungtak Seo, Marc Ulrich, et al.. (2007). Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides. Japanese Journal of Applied Physics. 46(4S). 1899–1899. 55 indexed citations
10.
Goncharova, Lyudmila V., T. Gustafsson, Özgür Çelık, et al.. (2007). Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 25(2). 261–268. 17 indexed citations
11.
Hussain, Muhammad M., Chadwin D. Young, D. C. Gilmer, et al.. (2006). A scalable and highly manufacturable single metal gate/high-k CMOS integration for sub-32nm technology for LSTP applications. Symposium on VLSI Technology. 208–209. 1 indexed citations
12.
Zhang, Zhibo, Sook‐Keun Song, Manuel Quevedo-López, et al.. (2006). Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO/sub 2/ universal mobility with an EOT=/spl sim/1 nm. IEEE Electron Device Letters. 27(3). 185–187. 11 indexed citations
13.
Bersuker, G., Byoung Hun Lee, Joel Barnett, et al.. (2004). Integration issues of high-k gate stack: Process-induced charging. 479–484. 10 indexed citations
14.
Barnett, Joel, Mark Gardner, C. Huffman, et al.. (2004). Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface. MRS Proceedings. 811. 21 indexed citations
15.
Young, Chadwin D., G. Bersuker, George Brown, et al.. (2004). Charge trapping in MOCVD hafnium-based gate field dielectric stack structures and its impact on device performance. 28–35. 14 indexed citations
16.
Young, Chadwin D., G. Bersuker, George Brown, et al.. (2004). Charge trapping and device performance degradation in MOCVD hafnium-based gate dielectric stack structures. 597–598. 15 indexed citations
17.
Bersuker, G., et al.. (2003). Parametric reliability test: wafer surface contamination study. 29–31. 2 indexed citations
18.
Young, Chadwin D., A. Kerber, Tuo‐Hung Hou, et al.. (2003). Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. 347–359. 6 indexed citations
19.
Barnett, Joel, et al.. (2003). Wet Etch Enhancement of HfO<sub>2</sub> Films by Implant Processing. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 92. 11–14. 7 indexed citations
20.
Hall, Howard L., Κ. Ε. Gregorich, R. Henderson, et al.. (1989). β-delayed fission fromEsm256and the level scheme ofFm256. Physical Review C. 39(5). 1866–1875. 47 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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