F. Nardi

2.7k citations

36 papers · 2.1k indexed · h-index 20

Impact in

Polymers and Plastics top 2%
- Transition Metal Oxide Nanomaterials
Cellular and Molecular Neuroscience top 2%
- Neuroscience and Neural Engineering
- Photoreceptor and optogenetics research

Papers in

Polymers and Plastics 16
- Transition Metal Oxide Nanomaterials 16
Electrical and Electronic Engineering 35
- Advanced Memory and Neural Computing 35
- Ferroelectric and Negative Capacitance Devices 28
- Semiconductor materials and devices 5
- CCD and CMOS Imaging Sensors 2

Co-authors: Daniele Ielmini C. Cagli Simone Balatti Stefano Larentis D. C. Gilmer Andrea L. Lacaita Sabina Spiga M. Fanciulli
Journals: IEEE Transactions on Electron Devices (7 papers)IEEE Electron Device Letters (3 papers)Applied Physics Letters (2 papers)Journal of Applied Physics (2 papers)Nanotechnology (2 papers)
Partner nations: Italy United States Belgium

In The Last Decade

F. Nardi

35 papers receiving 2.1k citations

Peers

Countries citing papers authored by F. Nardi

Since Specialization

Citations

This map shows the geographic impact of F. Nardi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Nardi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Nardi more than expected).

Fields of papers citing papers by F. Nardi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Nardi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Nardi. The network helps show where F. Nardi may publish in the future.

Co-authorship network

The 25 scholars most cited alongside F. Nardi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with F. Nardi Line = papers co-authored together F. Nardi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices IEEE Transactions on Electron Devices ·Fabrizio Buscemi, Enrico Piccinini, Luca Vandelli, F. Nardi, Andrea Padovani, B. Kaczer, Daniele Garbin, Sergiu Clima, R. Degraeve, Gouri Sankar Kar, Francesco Tavanti, Amine Slassi, Arrigo Calzolari, Luca Larcher	2023	7
2	A Multiscale-Multiphysics simulation platform for technology virtualization: from process chamber modeling to device electrical prediction Luca Larcher, F. Nardi, Valerio Milo, Noor-ul-Haya Adnan, F.A. Khamkhoeva, Henrik G. Füchtbauer, Shruba Gangopadhyay	2023	0
3	Spike-timing dependent plasticity in a transistor-selected resistive switching memory Nanotechnology ·Stefano Ambrogio, Simone Balatti, F. Nardi, Stefano Facchinetti, Daniele Ielmini	2013	81
4	Nanowire-based resistive switching memories: devices, operation and scaling Journal of Physics D Applied Physics ·Daniele Ielmini, C. Cagli, F. Nardi, Yuegang Zhang	2013	48
5	Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory IEEE Transactions on Electron Devices ·F. Nardi, Simone Balatti, Stefano Larentis, D. C. Gilmer, Daniele Ielmini	2012	83
6	Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study IEEE Transactions on Electron Devices ·F. Nardi, Stefano Larentis, Simone Balatti, D. C. Gilmer, Daniele Ielmini	2012	155
7	Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory IEEE Electron Device Letters ·Seol Choi, Simone Balatti, F. Nardi, Daniele Ielmini	2012	19
8	Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires Small ·C. Cagli, F. Nardi, B. Harteneck, Zhongkui Tan, Yuegang Zhang, Daniele Ielmini	2011	69
9	Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories Nanotechnology ·Daniele Ielmini, F. Nardi, C. Cagli	2011	194
10	Complementary switching in metal oxides: Toward diode-less crossbar RRAMs F. Nardi, Simone Balatti, Stefano Larentis, Daniele Ielmini	2011	57
11	Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices IEEE Electron Device Letters ·F. Nardi, C. Cagli, Sabina Spiga, Daniele Ielmini	2011	11
12	Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM IEEE Transactions on Electron Devices ·Daniele Ielmini, F. Nardi, C. Cagli	2011	99
13	Nanowire Switches: Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires (Small 20/2011) Small ·C. Cagli, F. Nardi, B. Harteneck, Zhongkui Tan, Yuegang Zhang, Daniele Ielmini	2011	1
14	Reset Current Reduction and Set-Reset Instabilities in Unipolar NiO RRAM F. Nardi, C. Cagli, Daniele Ielmini, Sabina Spiga	2011	1
15	Nanowire-based RRAM crossbar memory with metallic core-oxide shell nanostructure C. Cagli, F. Nardi, Daniele Ielmini, B. Harteneck, Justo Morales Alvarez, Emilio Oddone	2011	4
16	Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories Solid-State Electronics ·F. Nardi, Daniele Ielmini, C. Cagli, Sabina Spiga, M. Fanciulli, L. Goux, Dirk J. Wouters	2010	95
17	Trade-off between data retention and reset in NiO RRAMS Virtual Community of Pathological Anatomy (University of Castilla La Mancha) ·Daniele Ielmini, F. Nardi, C. Cagli, Andrea L. Lacaita	2010	15
18	Read-disturb limited reliability of multilevel NiO-based resistive-switching memory Virtual Community of Pathological Anatomy (University of Castilla La Mancha) ·Daniele Ielmini, F. Nardi, Lawrence L. Wu, E. Cianci, Sabina Spiga	2009	7
19	Reliability of NiO-Based Resistive Switching Memory (ReRAM) Elements with Pillar W Bottom Electrode SPIRE - Sciences Po Institutional REpository ·A. Demolliens, Christophe Müller, Damien Deleruyelle, Sabina Spiga, E. Cianci, M. Fanciulli, F. Nardi, C. Cagli, Daniele Ielmini	2009	10
20	Bleached fiber from OCC TAPPI Journal ·Marcus Jackson, Stefan T. Possony, F. Nardi	1994	4

About F. Nardi

F. Nardi is a scholar working on Polymers and Plastics, Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, Materials Chemistry and Cognitive Neuroscience, having authored 36 papers that have together received 2.1k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (35 papers), Ferroelectric and Negative Capacitance Devices (28 papers), Transition Metal Oxide Nanomaterials (16 papers), Electronic and Structural Properties of Oxides (8 papers), Neuroscience and Neural Engineering (6 papers), Semiconductor materials and devices (5 papers), Neural dynamics and brain function (2 papers) and CCD and CMOS Imaging Sensors (2 papers). The work is most often cited by research in Polymers and Plastics (558 citations), Cellular and Molecular Neuroscience (674 citations), Electrical and Electronic Engineering (2.1k citations), Materials Chemistry (457 citations) and Cognitive Neuroscience (135 citations). F. Nardi has collaborated with scholars based in Italy, United States and Belgium. Frequent co-authors include Daniele Ielmini, C. Cagli, Simone Balatti, Stefano Larentis, D. C. Gilmer, Andrea L. Lacaita, Sabina Spiga, M. Fanciulli, Yuegang Zhang and Stefano Ambrogio. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Journal of Applied Physics and Nanotechnology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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