S. Maikap

3.7k total citations
169 papers, 3.1k citations indexed

About

S. Maikap is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, S. Maikap has authored 169 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 168 papers in Electrical and Electronic Engineering, 44 papers in Materials Chemistry and 25 papers in Polymers and Plastics. Recurrent topics in S. Maikap's work include Semiconductor materials and devices (102 papers), Advanced Memory and Neural Computing (89 papers) and Ferroelectric and Negative Capacitance Devices (75 papers). S. Maikap is often cited by papers focused on Semiconductor materials and devices (102 papers), Advanced Memory and Neural Computing (89 papers) and Ferroelectric and Negative Capacitance Devices (75 papers). S. Maikap collaborates with scholars based in Taiwan, India and United States. S. Maikap's co-authors include Debanjan Jana, Amit Prakash, S. Z. Rahaman, Writam Banerjee, S. K. Ray, Ta–Chang Tien, Jer‐Ren Yang, Jian‐Tai Qiu, Subhranu Samanta and Mrinmoy Dutta and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Analytical Chemistry.

In The Last Decade

S. Maikap

165 papers receiving 3.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Maikap Taiwan 32 2.9k 1.0k 526 525 271 169 3.1k
Tae‐Sik Yoon South Korea 25 2.0k 0.7× 755 0.7× 483 0.9× 689 1.3× 302 1.1× 164 2.5k
Chi Jung Kang South Korea 25 2.1k 0.7× 629 0.6× 520 1.0× 793 1.5× 468 1.7× 136 2.6k
Ryoma Hayakawa Japan 26 1.5k 0.5× 949 0.9× 247 0.5× 347 0.7× 291 1.1× 104 2.0k
Nianduan Lu China 29 2.2k 0.8× 949 0.9× 350 0.7× 559 1.1× 216 0.8× 142 2.7k
Sunghoon Song South Korea 22 1.7k 0.6× 841 0.8× 269 0.5× 705 1.3× 499 1.8× 35 2.0k
Fu‐Chien Chiu Taiwan 20 2.0k 0.7× 1.2k 1.2× 214 0.4× 422 0.8× 365 1.3× 62 2.5k
D. C. Gilmer United States 35 4.4k 1.5× 1.5k 1.5× 656 1.2× 472 0.9× 111 0.4× 106 4.6k
Yeong‐Her Wang Taiwan 24 2.1k 0.7× 607 0.6× 185 0.4× 333 0.6× 436 1.6× 205 2.6k
Sabina Spiga Italy 32 2.7k 0.9× 1.2k 1.1× 594 1.1× 343 0.7× 111 0.4× 133 2.9k
Davide Sacchetto Switzerland 23 2.9k 1.0× 970 0.9× 228 0.4× 544 1.0× 456 1.7× 60 3.0k

Countries citing papers authored by S. Maikap

Since Specialization
Citations

This map shows the geographic impact of S. Maikap's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Maikap with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Maikap more than expected).

Fields of papers citing papers by S. Maikap

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Maikap. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Maikap. The network helps show where S. Maikap may publish in the future.

Co-authorship network of co-authors of S. Maikap

This figure shows the co-authorship network connecting the top 25 collaborators of S. Maikap. A scholar is included among the top collaborators of S. Maikap based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Maikap. S. Maikap is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Samanta, Subhranu, S. Z. Rahaman, Surajit Jana, et al.. (2017). Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection. Scientific Reports. 7(1). 11240–11240. 32 indexed citations
3.
Ginnaram, Sreekanth, Surajit Jana, Kanishk Singh, et al.. (2017). Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism. Scientific Reports. 7(1). 4735–4735. 66 indexed citations
4.
Maikap, S., Jian‐Tai Qiu, Surajit Jana, et al.. (2016). Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure. Nanoscale Research Letters. 11(1). 434–434. 6 indexed citations
5.
Samanta, Subhranu, et al.. (2016). Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure. Nanoscale Research Letters. 11(1). 389–389. 44 indexed citations
6.
Jana, Debanjan, Subhranu Samanta, Sourav Roy, Yu‐Feng Lin, & S. Maikap. (2015). Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure. Nano-Micro Letters. 7(4). 392–399. 22 indexed citations
7.
Jana, Debanjan, et al.. (2015). Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure. Nanoscale Research Letters. 10(1). 392–392. 11 indexed citations
8.
Jana, Debanjan, Sourav Roy, Mrinmoy Dutta, et al.. (2015). Conductive-bridging random access memory: challenges and opportunity for 3D architecture. Nanoscale Research Letters. 10(1). 188–188. 66 indexed citations
9.
Roy, Sourav, et al.. (2014). Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application. Nanoscale Research Letters. 9(1). 2410–2410. 20 indexed citations
10.
Maikap, S., Debanjan Jana, Mrinmoy Dutta, & Amit Prakash. (2014). Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure. Nanoscale Research Letters. 9(1). 292–292. 41 indexed citations
11.
Jana, Debanjan, Mrinmoy Dutta, Subhranu Samanta, & S. Maikap. (2014). RRAM characteristics using a new Cr/GdOx/TiN structure. Nanoscale Research Letters. 9(1). 2404–2404. 24 indexed citations
12.
Maikap, S., et al.. (2014). Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture. Nanoscale Research Letters. 9(1). 366–366. 11 indexed citations
13.
Maikap, S., et al.. (2014). Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure. Nanoscale Research Letters. 9(1). 179–179. 18 indexed citations
14.
Prakash, Amit, S. Maikap, Writam Banerjee, Debanjan Jana, & Chao‐Sung Lai. (2013). Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials. Nanoscale Research Letters. 8(1). 379–379. 23 indexed citations
15.
Prakash, Amit, Debanjan Jana, Subhranu Samanta, & S. Maikap. (2013). Self-compliance-improved resistive switching using Ir/TaO x /W cross-point memory. Nanoscale Research Letters. 8(1). 527–527. 24 indexed citations
16.
Prakash, Amit, Debanjan Jana, & S. Maikap. (2013). TaO x -based resistive switching memories: prospective and challenges. Nanoscale Research Letters. 8(1). 418–418. 182 indexed citations
17.
Rahaman, S. Z., S. Maikap, Atanu Das, et al.. (2012). Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte. Nanoscale Research Letters. 7(1). 614–614. 28 indexed citations
18.
Rahaman, S. Z., S. Maikap, Ta–Chang Tien, et al.. (2012). Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface. Nanoscale Research Letters. 7(1). 345–345. 71 indexed citations
19.
Banerjee, Writam, S. Z. Rahaman, Amit Prakash, & S. Maikap. (2011). High-κ Al2O3/WOxBilayer Dielectrics for Low-Power Resistive Switching Memory Applications. Japanese Journal of Applied Physics. 50(10S). 10PH01–10PH01. 9 indexed citations
20.
Maikap, S., S. Z. Rahaman, & Ta–Chang Tien. (2008). Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Ptcapacitors. Nanotechnology. 19(43). 435202–435202. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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