R. Jammy

590 total citations
32 papers, 439 citations indexed

About

R. Jammy is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Jammy has authored 32 papers receiving a total of 439 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Jammy's work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). R. Jammy is often cited by papers focused on Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). R. Jammy collaborates with scholars based in United States, South Korea and Canada. R. Jammy's co-authors include Jungwoo Oh, Hsin Tseng, Byoung Hun Lee, Howard R. Huff, P. D. Kirsch, Baozhen Li, Chen Fen, H. R. Harris, Casey Smith and G. Bersuker and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Materials Today.

In The Last Decade

R. Jammy

30 papers receiving 415 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Jammy United States 11 414 104 87 78 36 32 439
J.A. Babcock United States 15 665 1.6× 79 0.8× 77 0.9× 57 0.7× 46 1.3× 29 681
Paul M. Jordan Germany 10 397 1.0× 115 1.1× 93 1.1× 82 1.1× 33 0.9× 21 421
Kwang-Yong Kang South Korea 9 322 0.8× 137 1.3× 38 0.4× 65 0.8× 65 1.8× 29 395
Ashish Baraskar United States 13 344 0.8× 92 0.9× 226 2.6× 82 1.1× 50 1.4× 27 425
D. Charrier Netherlands 7 200 0.5× 63 0.6× 132 1.5× 76 1.0× 10 0.3× 14 276
Jakob E. Muench United Kingdom 5 210 0.5× 152 1.5× 111 1.3× 138 1.8× 40 1.1× 6 303
Leonhard Prechtel Germany 6 197 0.5× 165 1.6× 195 2.2× 182 2.3× 26 0.7× 8 353
Peng Suo China 11 179 0.4× 209 2.0× 149 1.7× 50 0.6× 57 1.6× 30 314
Yuan Taur United States 10 351 0.8× 74 0.7× 73 0.8× 26 0.3× 15 0.4× 13 362
Alessandro Callegari United States 7 355 0.9× 72 0.7× 88 1.0× 25 0.3× 19 0.5× 12 380

Countries citing papers authored by R. Jammy

Since Specialization
Citations

This map shows the geographic impact of R. Jammy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Jammy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Jammy more than expected).

Fields of papers citing papers by R. Jammy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Jammy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Jammy. The network helps show where R. Jammy may publish in the future.

Co-authorship network of co-authors of R. Jammy

This figure shows the co-authorship network connecting the top 25 collaborators of R. Jammy. A scholar is included among the top collaborators of R. Jammy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Jammy. R. Jammy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Romanczyk, Brian, Paul M. Thomas, S.L. Rommel, et al.. (2012). Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm<sup>2</sup> peak current density to enhance TFET drive current. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 27.1.1–27.1.3. 26 indexed citations
2.
Stillman, William, Sergey Rumyantsev, M. S. Shur, et al.. (2011). SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION. International Journal of High Speed Electronics and Systems. 20(1). 27–42. 31 indexed citations
3.
Loh, Wei Yip, P. Y. Hung, G. Bersuker, et al.. (2011). High temperature millisecond silicide anneal for contact resistivity &#x003C; 10<sup>&#x2212;8</sup> &#x03A9;cm<sup>2</sup>. 1–2. 1 indexed citations
4.
Hill, Richard J., Joel Barnett, Jifu Huang, et al.. (2010). Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow. 6.2.1–6.2.4. 31 indexed citations
5.
Hussain, Muhammad M., Casey Smith, H. R. Harris, et al.. (2010). Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-$k$/Metal Gates CMOS FinFETs for Multi- $V_{\rm Th}$ Engineering. IEEE Transactions on Electron Devices. 57(3). 626–631. 26 indexed citations
6.
Huang, Jen‐Wei, P. D. Kirsch, Jungwoo Oh, et al.. (2009). Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe. IEEE Electron Device Letters. 30(3). 285–287. 17 indexed citations
7.
Bersuker, G., D. C. Gilmer, Andrea Padovani, et al.. (2009). A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase &#x00026; Endurance to 10^5 Cycles. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–2. 7 indexed citations
8.
Goel, Neeraj, et al.. (2009). Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer. IEEE Electron Device Letters. 30(3). 216–218. 23 indexed citations
9.
Kang, Chang Yong, Dawei Heh, Chadwin D. Young, et al.. (2008). Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics. 663–664. 6 indexed citations
10.
11.
Sun, Yubing, P. Majhi, Kang Min Ok, et al.. (2008). Strain additivity in III-V channels for CMOSFETs beyond 22nm technology node. 182–183. 20 indexed citations
12.
Majhi, Prashant, Dawei Heh, G. Bersuker, et al.. (2007). Impact of flash annealing on performance and reliability of high-&#x003BA;/metal-gate MOSFETs for sub-45 nm CMOS. 353–356. 5 indexed citations
13.
Harris, H. R., Scott E. Thompson, S. Krishnan, et al.. (2007). Flexible, simplified CMOS on Si(110) with metal gate / high k for HP and LSTP. 53. 57–60. 6 indexed citations
14.
Lee, Byoung Hun, et al.. (2006). Gate stack technology for nanoscale devices. 206–207. 2 indexed citations
15.
Barnett, Joel, et al.. (2006). Reliability of thick oxides integrated with HfSiOx gate dielectric. 1 indexed citations
16.
Lee, Byoung Hun, Jungwoo Oh, Hsin Tseng, R. Jammy, & Howard R. Huff. (2006). Gate stack technology for nanoscale devices. Materials Today. 9(6). 32–40. 127 indexed citations
17.
Zafar, Sufi, Min Yang, Evgeni Gusev, et al.. (2005). A comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO/sub 2/). 128–129. 18 indexed citations
18.
Zafar, Sufi, Vijay Narayanan, Agnese Callegari, et al.. (2005). HfO/sub 2//metal stacks: determination of energy level diagram, work functions &amp;amp; their dependence on metal deposition. 4858. 44–45. 5 indexed citations
19.
Parkinson, P. M. Saz, M. Chudzik, Kangguo Cheng, et al.. (2004). Novel techniques for scaling deep trench DRAM capacitor technology to 0.11 μm and beyond. ed 33. 21–24. 4 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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