Hsing‐Huang Tseng

844 total citations
38 papers, 664 citations indexed

About

Hsing‐Huang Tseng is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Hsing‐Huang Tseng has authored 38 papers receiving a total of 664 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 4 papers in Biomedical Engineering and 4 papers in Materials Chemistry. Recurrent topics in Hsing‐Huang Tseng's work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). Hsing‐Huang Tseng is often cited by papers focused on Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). Hsing‐Huang Tseng collaborates with scholars based in United States, South Korea and United Kingdom. Hsing‐Huang Tseng's co-authors include Raj Jammy, Prashant Majhi, Jungwoo Oh, Ji‐Woon Yang, Casey Smith, Chang Yong Kang, P. Zeitzoff, Anupama Bowonder, Pratik Patel and Kanghoon Jeon and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Hsing‐Huang Tseng

35 papers receiving 630 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hsing‐Huang Tseng United States 13 655 104 97 93 16 38 664
R. Beyeler Switzerland 11 578 0.9× 91 0.9× 150 1.5× 46 0.5× 15 0.9× 29 602
J.F. Nijs Belgium 8 331 0.5× 56 0.5× 124 1.3× 97 1.0× 12 0.8× 13 357
T. Lauinger Germany 8 509 0.8× 53 0.5× 137 1.4× 238 2.6× 15 0.9× 11 530
S. T. Chang Taiwan 10 445 0.7× 79 0.8× 119 1.2× 186 2.0× 13 0.8× 20 480
Hiroaki Arimura Belgium 15 620 0.9× 95 0.9× 82 0.8× 95 1.0× 7 0.4× 96 651
M. Hane Japan 13 422 0.6× 33 0.3× 72 0.7× 84 0.9× 23 1.4× 60 449
Gaurav Thareja United States 11 454 0.7× 101 1.0× 159 1.6× 121 1.3× 5 0.3× 24 466
P. Sana United States 7 309 0.5× 50 0.5× 95 1.0× 140 1.5× 21 1.3× 15 348
Clément Porret Belgium 12 320 0.5× 114 1.1× 147 1.5× 131 1.4× 14 0.9× 78 404
J.G. Fiorenza United States 14 512 0.8× 144 1.4× 162 1.7× 65 0.7× 13 0.8× 36 531

Countries citing papers authored by Hsing‐Huang Tseng

Since Specialization
Citations

This map shows the geographic impact of Hsing‐Huang Tseng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hsing‐Huang Tseng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hsing‐Huang Tseng more than expected).

Fields of papers citing papers by Hsing‐Huang Tseng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hsing‐Huang Tseng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hsing‐Huang Tseng. The network helps show where Hsing‐Huang Tseng may publish in the future.

Co-authorship network of co-authors of Hsing‐Huang Tseng

This figure shows the co-authorship network connecting the top 25 collaborators of Hsing‐Huang Tseng. A scholar is included among the top collaborators of Hsing‐Huang Tseng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hsing‐Huang Tseng. Hsing‐Huang Tseng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Se‐Hoon, Prashant Majhi, D. Ferrer, et al.. (2011). Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate. IEEE Transactions on Electron Devices. 58(9). 2917–2923. 1 indexed citations
2.
Loh, Wei-Yip, Kanghoon Jeon, Chang Yong Kang, et al.. (2010). Sub-60nm Si tunnel field effect transistors with I<inf>on</inf> &#x003E;100 &#x00B5;A/&#x00B5;m. 162–165. 10 indexed citations
3.
Jeon, Kanghoon, Wei-Yip Loh, Pratik Patel, et al.. (2010). Si tunnel transistors with a novel silicided source and 46mV/dec swing. 121–122. 171 indexed citations
4.
Kang, Chang Yong, et al.. (2009). A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress. IEEE Electron Device Letters. 30(7). 760–762. 11 indexed citations
5.
Bersuker, G., D. C. Gilmer, Andrea Padovani, et al.. (2009). A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase &#x00026; Endurance to 10^5 Cycles. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–2. 7 indexed citations
6.
Tseng, Hsing‐Huang, Paul Kirsch, G. Bersuker, et al.. (2009). The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper). Microelectronic Engineering. 86(7-9). 1722–1727. 17 indexed citations
7.
Çelik‐Butler, Zeynep, et al.. (2009). A low-frequency noise model for advanced gate-stack MOSFETs. Microelectronics Reliability. 49(2). 103–112. 12 indexed citations
8.
9.
Bowonder, Anupama, Pratik Patel, Kanghoon Jeon, et al.. (2008). Low-voltage green transistor using ultra shallow junction and hetero-tunneling. 93–96. 29 indexed citations
10.
11.
Bersuker, G., et al.. (2008). Identifying Performance-Critical Defects in the High-k/Metal Gate Stacks. ECS Transactions. 16(5). 395–410. 3 indexed citations
12.
Majhi, Prashant, Hsing‐Huang Tseng, Raj Jammy, et al.. (2008). Infusion Doping for Sub-45 nm CMOS Technology Nodes. AIP conference proceedings. 407–410. 1 indexed citations
13.
Majhi, Prashant, Dawei Heh, G. Bersuker, et al.. (2007). Impact of flash annealing on performance and reliability of high-&#x003BA;/metal-gate MOSFETs for sub-45 nm CMOS. 353–356. 5 indexed citations
14.
Lysaght, Patrick, Joel Barnett, G. Bersuker, et al.. (2007). Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing. Journal of Applied Physics. 101(2). 59 indexed citations
15.
Oh, Jungwoo, Prashant Majhi, Sanjay K. Banerjee, et al.. (2007). Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates. IEEE Electron Device Letters. 28(11). 1044–1046. 42 indexed citations
16.
Hussain, Muhammad M., Ji‐Woon Yang, Paul Kirsch, et al.. (2007). Dual work function high-k/Metal Gate CMOS FinFETs. 46. 207–209. 5 indexed citations
17.
Oh, Jungwoo, Prashant Majhi, Hi‐Deok Lee, et al.. (2007). Formation of Shallow Junctions Using Ge-Si Heterostructures for High Mobility Channel MOSFETs. 55–60. 3 indexed citations
18.
Lysaght, Patrick, G. Bersuker, Hsing‐Huang Tseng, & Raj Jammy. (2006). Spectroscopic analysis of the process‐dependent microstructure of ultra‐thin high‐ k gate dielectric film systems. Surface and Interface Analysis. 38(12-13). 1588–1593. 1 indexed citations
19.
Kalpat, S., Hsing‐Huang Tseng, M. Ramón, et al.. (2005). BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments. IEEE Transactions on Device and Materials Reliability. 5(1). 26–35. 20 indexed citations
20.
Tseng, Hsing‐Huang, et al.. (1996). Gate etch induced diode leakage prevention with 7-nm CVD stacked gate dielectric. IEEE Electron Device Letters. 17(11). 528–530. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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