Hsing‐Huang Tseng

844 citations

38 papers · 664 indexed · h-index 13

Co-authors: Raj Jammy Prashant Majhi Jungwoo Oh Ji‐Woon Yang Chang Yong Kang Casey Smith P. Zeitzoff Anupama Bowonder
Topics: Semiconductor materials and devices (35 papers)Advancements in Semiconductor Devices and Circuit Design (31 papers)Integrated Circuits and Semiconductor Failure Analysis (19 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Biomedical Engineering
Journals: Journal of Applied Physics IEEE Transactions on Electron Devices IEEE Electron Device Letters
Partner nations: United States South Korea United Kingdom

In The Last Decade

Hsing‐Huang Tseng

35 papers receiving 630 citations

Peers

Countries citing papers authored by Hsing‐Huang Tseng

Since Specialization

Citations

This map shows the geographic impact of Hsing‐Huang Tseng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hsing‐Huang Tseng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hsing‐Huang Tseng more than expected).

Fields of papers citing papers by Hsing‐Huang Tseng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hsing‐Huang Tseng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hsing‐Huang Tseng. The network helps show where Hsing‐Huang Tseng may publish in the future.

Co-authorship network of co-authors of Hsing‐Huang Tseng

This figure shows the co-authorship network connecting the top 25 collaborators of Hsing‐Huang Tseng. A scholar is included among the top collaborators of Hsing‐Huang Tseng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hsing‐Huang Tseng. Hsing‐Huang Tseng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs 2013 ·Microelectronic Engineering ·Min Sang Park,Yonghyun Kim,(unknown),Chang Yong Kang,(unknown),Jungwoo Oh,Prashant Majhi,Hsing‐Huang Tseng,Jack C. Lee,Sanjay K. Banerjee,Jeong‐Soo Lee,Raj Jammy,Yoon‐Ha Jeong	1
2	Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate 2011 ·IEEE Transactions on Electron Devices ·Se‐Hoon Lee,Prashant Majhi,D. Ferrer,(unknown),(unknown),Jungwoo Oh,Wei-Yip Loh,(unknown),(unknown),Hsing‐Huang Tseng,Rusty Harris,G. Bersuker,Paul Kirsch,Raj Jammy,Sanjay K. Banerjee	1
3	Sub-60nm Si tunnel field effect transistors with I<inf>on</inf> >100 µA/µm 2010 ·Wei-Yip Loh,Kanghoon Jeon,Chang Yong Kang,Jungwoo Oh,Pratik Patel,Casey Smith,Joel Barnett,(unknown),Tsu‐Jae King Liu,Hsing‐Huang Tseng,Prashant Majhi,Raj Jammy,Chenming Hu	10
4	Si tunnel transistors with a novel silicided source and 46mV/dec swing 2010 ·Kanghoon Jeon,Wei-Yip Loh,Pratik Patel,Chang Yong Kang,Jungwoo Oh,Anupama Bowonder,(unknown),(unknown),Casey Smith,Prashant Majhi,Hsing‐Huang Tseng,Raj Jammy,Tsu‐Jae King Liu,Chenming Hu	171
5	The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper) 2009 ·Microelectronic Engineering ·Hsing‐Huang Tseng,Paul Kirsch,(unknown),G. Bersuker,Prashant Majhi,Muhammad M. Hussain,Raj Jammy	17
6	A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress 2009 ·IEEE Electron Device Letters ·(unknown),Chang Yong Kang,Min Sang Park,Byoung Hun Lee,(unknown),(unknown),Hsing‐Huang Tseng,R. Jammy,(unknown)	11
7	A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles 2009 ·IRIS UNIMORE (University of Modena and Reggio Emilia) ·(unknown),G. Bersuker,D. C. Gilmer,Andrea Padovani,(unknown),Aneesh Nainani,Dawei Heh,(unknown),(unknown),Krishna Parat,Paul Kirsch,Luca Larcher,Hsing‐Huang Tseng,Krishna C. Saraswat,R. Jammy	7
8	Low-voltage green transistor using ultra shallow junction and hetero-tunneling 2008 ·Anupama Bowonder,Pratik Patel,Kanghoon Jeon,Jungwoo Oh,Prashant Majhi,Hsing‐Huang Tseng,Chenming Hu	29
9	Identifying Performance-Critical Defects in the High-k/Metal Gate Stacks 2008 ·ECS Transactions ·G. Bersuker,(unknown),(unknown),A. Neugroschel,Hsing‐Huang Tseng,Raj Jammy	3
10	Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs) 2008 ·IEEE Electron Device Letters ·Se‐Hoon Lee,Prashant Majhi,Jungwoo Oh,(unknown),Chadwin D. Young,Anupama Bowonder,Wei-Yip Loh,Kyu-Jin Choi,(unknown),Hi‐Deok Lee,Paul Kirsch,H. R. Harris,Wilman Tsai,Suman Datta,Hsing‐Huang Tseng,Sanjay K. Banerjee,Raj Jammy	12
11	Infusion Doping for Sub-45 nm CMOS Technology Nodes 2008 ·AIP conference proceedings ·(unknown),Prashant Majhi,Hsing‐Huang Tseng,Raj Jammy,Tsu‐Jae King Liu,Edmund G. Seebauer,Susan B. Felch,Amitabh Jain,(unknown)	1
12	USJ Process Challenges for sub-45 nm CMOS 2008 ·AIP conference proceedings ·(unknown),Prashant Majhi,Hsing‐Huang Tseng,(unknown),Raj Jammy,Tsu‐Jae King Liu,Edmund G. Seebauer,Susan B. Felch,Amitabh Jain,(unknown)	4
13	Dual work function high-k/Metal Gate CMOS FinFETs 2007 ·Muhammad M. Hussain,(unknown),(unknown),Ji‐Woon Yang,(unknown),(unknown),Paul Kirsch,Prashant Majhi,(unknown),Rusty Harris,Hsing‐Huang Tseng,(unknown)	5
14	Impact of flash annealing on performance and reliability of high-κ/metal-gate MOSFETs for sub-45 nm CMOS 2007 ·(unknown),Prashant Majhi,Dawei Heh,G. Bersuker,Chadwin D. Young,(unknown),Rusty Harris,Paul Kirsch,Rino Choi,Man Chang,Joonmyoung Lee,Hyunsang Hwang,Hsing‐Huang Tseng,R. Jammy,Tsu‐Jae King Liu	5
15	Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing 2007 ·Journal of Applied Physics ·Patrick Lysaght,Joel Barnett,G. Bersuker,J. C. Woicik,Daniel A. Fischer,Brendan Foran,Hsing‐Huang Tseng,Raj Jammy	59
16	Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates 2007 ·IEEE Electron Device Letters ·Jungwoo Oh,Prashant Majhi,(unknown),(unknown),Sanjay K. Banerjee,Chang Yong Kang,Ji‐Woon Yang,(unknown),Hsing‐Huang Tseng,Raj Jammy	42
17	Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap 2007 ·IEEE Transactions on Electron Devices ·Ji‐Woon Yang,P. Zeitzoff,Hsing‐Huang Tseng	53
18	Spectroscopic analysis of the process‐dependent microstructure of ultra‐thin high‐ k gate dielectric film systems 2006 ·Surface and Interface Analysis ·Patrick Lysaght,G. Bersuker,Hsing‐Huang Tseng,Raj Jammy	1
19	BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments 2005 ·IEEE Transactions on Device and Materials Reliability ·S. Kalpat,Hsing‐Huang Tseng,M. Ramón,(unknown),D. Tekleab,P.J. Tobin,D. C. Gilmer,R. I. Hegde,C. Capasso,Clarence J. Tracy,B. E. White	20
20	Gate etch induced diode leakage prevention with 7-nm CVD stacked gate dielectric 1996 ·IEEE Electron Device Letters ·(unknown),Hsing‐Huang Tseng	1

About Hsing‐Huang Tseng

Hsing‐Huang Tseng is a scholar working on Electrical and Electronic Engineering, Instrumentation and Electronic, Optical and Magnetic Materials, having authored 38 papers that have together received 664 indexed citations. Recurring topics across this work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). The work is most often cited by research in Electrical and Electronic Engineering (655 citations), Atomic and Molecular Physics, and Optics (97 citations) and Biomedical Engineering (104 citations). Hsing‐Huang Tseng has collaborated with scholars based in United States, South Korea and United Kingdom. Frequent co-authors include Raj Jammy, Prashant Majhi, Jungwoo Oh, Ji‐Woon Yang, Chang Yong Kang, Casey Smith, P. Zeitzoff, Anupama Bowonder, Kanghoon Jeon and Pratik Patel. Their work appears in journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact