M. Porti

3.0k total citations
114 papers, 2.4k citations indexed

About

M. Porti is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Porti has authored 114 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 108 papers in Electrical and Electronic Engineering, 39 papers in Atomic and Molecular Physics, and Optics and 21 papers in Materials Chemistry. Recurrent topics in M. Porti's work include Semiconductor materials and devices (88 papers), Integrated Circuits and Semiconductor Failure Analysis (67 papers) and Advancements in Semiconductor Devices and Circuit Design (43 papers). M. Porti is often cited by papers focused on Semiconductor materials and devices (88 papers), Integrated Circuits and Semiconductor Failure Analysis (67 papers) and Advancements in Semiconductor Devices and Circuit Design (43 papers). M. Porti collaborates with scholars based in Spain, Germany and China. M. Porti's co-authors include M. Nafrı́a, X. Aymerich, G. Bersuker, Mario Lanza, V. Iglesias, Keith P. McKenna, Alexander L. Shluger, Luca Larcher, Andrea Padovani and D. C. Gilmer and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Porti

107 papers receiving 2.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Porti Spain 25 2.2k 800 447 235 212 114 2.4k
Karl Opsomer Belgium 25 2.1k 1.0× 928 1.2× 537 1.2× 258 1.1× 323 1.5× 104 2.3k
L. Pantisano Belgium 31 3.1k 1.4× 621 0.8× 243 0.5× 111 0.5× 113 0.5× 149 3.2k
Yi Tong China 22 1.3k 0.6× 690 0.9× 212 0.5× 259 1.1× 157 0.7× 124 1.6k
I. Goldfarb Israel 21 951 0.4× 414 0.5× 665 1.5× 280 1.2× 155 0.7× 69 1.6k
Fu‐Chien Chiu Taiwan 20 2.0k 0.9× 1.2k 1.5× 242 0.5× 214 0.9× 422 2.0× 62 2.5k
Nianduan Lu China 29 2.2k 1.0× 949 1.2× 293 0.7× 350 1.5× 559 2.6× 142 2.7k
Jinjoo Park South Korea 20 1.2k 0.6× 616 0.8× 187 0.4× 108 0.5× 249 1.2× 96 1.4k
Ivona Z. Mitrović United Kingdom 27 2.1k 1.0× 875 1.1× 195 0.4× 344 1.5× 339 1.6× 161 2.4k
Hyun‐Yong Yu South Korea 25 2.1k 1.0× 1.4k 1.8× 542 1.2× 168 0.7× 128 0.6× 127 2.7k
Marie‐Paule Besland France 22 1.2k 0.6× 842 1.1× 202 0.5× 137 0.6× 308 1.5× 92 1.6k

Countries citing papers authored by M. Porti

Since Specialization
Citations

This map shows the geographic impact of M. Porti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Porti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Porti more than expected).

Fields of papers citing papers by M. Porti

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Porti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Porti. The network helps show where M. Porti may publish in the future.

Co-authorship network of co-authors of M. Porti

This figure shows the co-authorship network connecting the top 25 collaborators of M. Porti. A scholar is included among the top collaborators of M. Porti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Porti. M. Porti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Porti, M., et al.. (2024). On the Aging of OTFTs and Its Impact on PUFs Reliability. Micromachines. 15(4). 443–443.
3.
4.
Seoane, Natalia, S. Claramunt, Antonio J. García‐Loureiro, et al.. (2019). Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability. Applied Physics Letters. 114(9). 9 indexed citations
5.
Vescio, Giovanni, S. Claramunt, Daniel F. Alonso, et al.. (2019). Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization. ACS Applied Materials & Interfaces. 11(26). 23659–23666. 15 indexed citations
6.
Aragonés, X., D. Mateo, Francesc Moll, et al.. (2018). Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology. QRU Quaderns de Recerca en Urbanisme. 82–87. 1 indexed citations
7.
Pérez‐Tomás, Amador, Gustau Catalán, A. Fontserè, et al.. (2015). Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology. 26(11). 115203–115203. 11 indexed citations
8.
Wu, Qian, M. Porti, Mario Lanza, et al.. (2015). Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs. 1–4. 1 indexed citations
9.
Porti, M., J. Martín-Martínez, Mario Lanza, et al.. (2013). Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale. 6 indexed citations
10.
Pirrotta, Onofrio, Luca Larcher, Mario Lanza, et al.. (2013). Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries. Journal of Applied Physics. 114(13). 79 indexed citations
11.
Lanza, Mario, V. Iglesias, M. Porti, M. Nafrı́a, & X. Aymerich. (2011). Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics. Nanoscale Research Letters. 6(1). 108–108. 27 indexed citations
12.
Bersuker, G., D. C. Gilmer, Dekel Veksler, et al.. (2010). Metal oxide RRAM switching mechanism based on conductive filament microscopic properties. IRIS UNIMORE (University of Modena and Reggio Emilia). 19.6.1–19.6.4. 92 indexed citations
13.
Lanza, Mario, M. Porti, M. Nafrı́a, et al.. (2009). Combined Nanoscale and Device-Level Degradation Analysis of $\hbox{SiO}_{2}$ Layers of MOS Nonvolatile Memory Devices. IEEE Transactions on Device and Materials Reliability. 9(4). 529–536. 9 indexed citations
14.
Porti, M., M. Nafrı́a, X. Aymerich, et al.. (2007). Si-nc(ナノ結晶)系メモリ金属-酸化物-半導体デバイスのナノスケールでの電気特性評価. Journal of Applied Physics. 101(6). 64509–64509. 1 indexed citations
15.
Porti, M., M. Nafrı́a, X. Aymerich, et al.. (2007). Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices. Journal of Applied Physics. 101(6). 22 indexed citations
16.
Porti, M., et al.. (2005). Charge storage in Si nanocrystals embedded in SiO 2 with enhanced C-AFM. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5838. 43–43. 1 indexed citations
17.
Porti, M., et al.. (2003). Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. Microelectronics Reliability. 43(8). 1203–1209. 9 indexed citations
18.
Porti, M., M. Nafrı́a, X. Aymerich, Alexander Olbrich, & B. Ebersberger. (2002). Post-breakdown electrical characterization of ultrathin SiO2 films with conductive atomic force microscopy. Nanotechnology. 13(3). 388–391. 2 indexed citations
19.
Hill, D., Xavier Blasco, M. Porti, M. Nafrı́a, & X. Aymerich. (2001). Characterising the surface roughness of AFM grown SiO2 on Si. Microelectronics Reliability. 41(7). 1077–1079. 7 indexed citations
20.
Porti, M., Xavier Blasco, M. Nafrı́a, et al.. (2001). Pre- and post-breakdown switching behaviour in ultrathin SiO2layers detected by C-AFM. Nanotechnology. 12(2). 164–167. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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