Rama I. Hegde

1.1k total citations
34 papers, 935 citations indexed

About

Rama I. Hegde is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Rama I. Hegde has authored 34 papers receiving a total of 935 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Rama I. Hegde's work include Semiconductor materials and devices (27 papers), Copper Interconnects and Reliability (7 papers) and Semiconductor materials and interfaces (6 papers). Rama I. Hegde is often cited by papers focused on Semiconductor materials and devices (27 papers), Copper Interconnects and Reliability (7 papers) and Semiconductor materials and interfaces (6 papers). Rama I. Hegde collaborates with scholars based in United States, Poland and France. Rama I. Hegde's co-authors include Philip J. Tobin, S. Raghaw, Chunli Liu, M. W. Stoker, Maciej Gutowski, John E. Jaffe, Sergio A. Ajuria, B. Maiti, K. Reid and Yoshio Okada and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

Rama I. Hegde

32 papers receiving 900 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Rama I. Hegde United States	15	809	436	133	126	109	34	935
Akira Izumi Japan	18	630 0.8×	432 1.0×	137 1.0×	62 0.5×	89 0.8×	70	774
L. Miotti Brazil	15	516 0.6×	276 0.6×	74 0.6×	88 0.7×	85 0.8×	61	687
R. Gregory United States	18	988 1.2×	542 1.2×	86 0.6×	162 1.3×	164 1.5×	46	1.1k
D. L. Williamson United States	17	602 0.7×	589 1.4×	69 0.5×	83 0.7×	116 1.1×	37	800
J. Sapjeta United States	10	799 1.0×	370 0.8×	102 0.8×	119 0.9×	168 1.5×	29	951
F. B. Alexander United States	10	350 0.4×	263 0.6×	178 1.3×	190 1.5×	132 1.2×	11	560
M. Eddrief France	16	483 0.6×	516 1.2×	29 0.2×	153 1.2×	221 2.0×	33	781
T. P. Smirnova Russia	15	477 0.6×	460 1.1×	100 0.8×	65 0.5×	69 0.6×	54	672
E. Tóth‐Kádár Hungary	19	572 0.7×	521 1.2×	105 0.8×	210 1.7×	410 3.8×	37	870
L. Muehlhoff United States	8	545 0.7×	326 0.7×	59 0.4×	111 0.9×	228 2.1×	9	757

Countries citing papers authored by Rama I. Hegde

Since Specialization

Citations

This map shows the geographic impact of Rama I. Hegde's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Rama I. Hegde with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Rama I. Hegde more than expected).

Fields of papers citing papers by Rama I. Hegde

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Rama I. Hegde. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Rama I. Hegde. The network helps show where Rama I. Hegde may publish in the future.

Co-authorship network of co-authors of Rama I. Hegde

This figure shows the co-authorship network connecting the top 25 collaborators of Rama I. Hegde. A scholar is included among the top collaborators of Rama I. Hegde based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Rama I. Hegde. Rama I. Hegde is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Schaeffer, J., Mark Raymond, D. C. Gilmer, et al.. (2008). Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes. ECS Transactions. 16(5). 3–10.

Hegde, Rama I.. (2008). Film and Device Characteristics of Sputter-Deposited Hafnium Zirconate Gate Dielectric. Journal of The Electrochemical Society. 155(5). G121–G121. 4 indexed citations

Triyoso, Dina H., et al.. (2008). Improved Electrical Properties of ALD $\hbox{Hf}_{x} \hbox{Zr}_{1 - x}\hbox{O}_{2}$ Dielectrics Deposited on Ultrathin PVD Zr Underlayer. IEEE Electron Device Letters. 29(1). 57–59. 25 indexed citations

Triyoso, Dina H., Rama I. Hegde, R. Gregory, et al.. (2007). Scaling of Hafnium-based High-k Dielectrics. MRS Proceedings. 996. 2 indexed citations

Gutowski, Maciej, John E. Jaffe, Chunli Liu, et al.. (2002). Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO 2 and HfO 2 in Contact with Si and SiO_2. APS March Meeting Abstracts. 2 indexed citations

Liu, Chunli, M. W. Stoker, Rama I. Hegde, S. Raghaw, & Philip J. Tobin. (2002). Theoretical and Experimental Investigation of Thermal Stability of HfO₂/Si and HfO₂/SiO₂ Interfaces. MRS Proceedings. 731. 4 indexed citations

Hegde, Rama I., B. Maiti, S. Raghaw, K. Reid, & Philip J. Tobin. (1998). Surface and Interface Roughness of Ultrathin Nitric Oxide Oxynitride Gate Dielectric. Journal of The Electrochemical Society. 145(1). L13–L15. 6 indexed citations

Hegde, Rama I., et al.. (1997). A Low Temperature Collimated Titanium Deposition Process. Journal of The Electrochemical Society. 144(5). 1849–1854. 3 indexed citations

Hegde, Rama I., B. Maiti, & Philip J. Tobin. (1997). Growth and Film Characteristics of N 2 O and NO Oxynitride Gate and Tunnel Dielectrics. Journal of The Electrochemical Society. 144(3). 1081–1086. 34 indexed citations

10.

Hegde, Rama I., Philip J. Tobin, K. Reid, B. Maiti, & Sergio A. Ajuria. (1995). Growth and surface chemistry of oxynitride gate dielectric using nitric oxide. Applied Physics Letters. 66(21). 2882–2884. 117 indexed citations

11.

Fitch, J. T., et al.. (1994). Morphology and Step Coverage of In-Situ Doped Polysilicon Films Deposited by Single Wafer CVD. MRS Proceedings. 355.

12.

Okada, Yoshio, Philip J. Tobin, K. Reid, Rama I. Hegde, & Sergio A. Ajuria. (1994). Uniformity of the N 2 O Furnace Oxynitride Process for the Formation of Thin Tunnel Dielectrics. Journal of The Electrochemical Society. 141(12). 3500–3504. 2 indexed citations

13.

Hegde, Rama I., et al.. (1993). Nucleation and growth of chemical vapor deposition TiN films on Si (100) as studied by total reflection x-ray fluorescence, atomic force microscopy, and Auger electron spectroscopy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 11(4). 1692–1695. 9 indexed citations

14.

Hegde, Rama I., et al.. (1993). Thin film properties of low-pressure chemical vapor deposition TiN barrier for ultra-large-scale integration applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(4). 1287–1296. 69 indexed citations

15.

Hegde, Rama I., et al.. (1993). TiNCl formation during low-temperature, low-pressure chemical vapor deposition of TiN. Applied Physics Letters. 62(19). 2326–2328. 22 indexed citations

16.

Okada, Yoshio, et al.. (1992). Oxynitiride gate dielectrics prepared by rapid thermal processing using mixtures of nitrous oxide and oxygen. Applied Physics Letters. 61(26). 3163–3165. 29 indexed citations

17.

Hegde, Rama I., et al.. (1992). Growth and Surface Morphology of Thin Silicon Films Using an atomic Force Microscope. MRS Proceedings. 295. 1 indexed citations

18.

Hegde, Rama I. & Philip J. Tobin. (1992). Nanometer scale imaging of cobalt silicide in air using atomic force microscope and scanning tunneling microscope. Surface Science. 261(1-3). 1–6. 5 indexed citations

19.

Hegde, Rama I., et al.. (1991). Structural integrity and thermal stability of TiN/CoSi2 used as local interconnect in a self-aligned CoSi2 process. Applied Surface Science. 52(1-2). 59–69. 4 indexed citations

20.

Hegde, Rama I., et al.. (1991). Thin Film Properties of LPCVD TiN Barrier for Silicon Device Technology. MRS Proceedings. 250. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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