Simone Balatti

3.3k total citations
44 papers, 2.7k citations indexed

About

Simone Balatti is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Simone Balatti has authored 44 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 12 papers in Cellular and Molecular Neuroscience. Recurrent topics in Simone Balatti's work include Advanced Memory and Neural Computing (44 papers), Ferroelectric and Negative Capacitance Devices (38 papers) and Electronic and Structural Properties of Oxides (12 papers). Simone Balatti is often cited by papers focused on Advanced Memory and Neural Computing (44 papers), Ferroelectric and Negative Capacitance Devices (38 papers) and Electronic and Structural Properties of Oxides (12 papers). Simone Balatti collaborates with scholars based in Italy, United States and China. Simone Balatti's co-authors include Daniele Ielmini, Stefano Ambrogio, D. C. Gilmer, F. Nardi, Stefano Larentis, Nirmal Ramaswamy, Alessandro Calderoni, Zhongqiang Wang, Valerio Milo and Roberto Carboni and has published in prestigious journals such as Advanced Materials, ACS Nano and IEEE Transactions on Electron Devices.

In The Last Decade

Simone Balatti

44 papers receiving 2.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Simone Balatti Italy 26 2.7k 978 451 408 295 44 2.7k
Pang-Shiu Chen Taiwan 17 3.1k 1.2× 838 0.9× 581 1.3× 571 1.4× 111 0.4× 36 3.1k
Yu-Sheng Chen Taiwan 17 2.9k 1.1× 802 0.8× 508 1.1× 515 1.3× 109 0.4× 47 3.0k
Alessandro Calderoni Italy 23 1.7k 0.6× 587 0.6× 223 0.5× 292 0.7× 289 1.0× 51 1.8k
Heng-Yuan Lee Taiwan 26 3.9k 1.5× 1.0k 1.0× 661 1.5× 751 1.8× 136 0.5× 68 3.9k
Seung Ryul Lee South Korea 11 2.6k 1.0× 851 0.9× 672 1.5× 541 1.3× 133 0.5× 19 2.7k
Nirmal Ramaswamy United States 22 1.6k 0.6× 586 0.6× 194 0.4× 188 0.5× 286 1.0× 38 1.7k
Siddharth Gaba United States 13 2.9k 1.1× 1.4k 1.4× 512 1.1× 369 0.9× 529 1.8× 18 2.9k
H.-S. Philip Wong United States 7 3.1k 1.2× 1.0k 1.1× 551 1.2× 577 1.4× 248 0.8× 11 3.3k
Ji Hyun Hur South Korea 6 2.2k 0.8× 737 0.8× 578 1.3× 474 1.2× 125 0.4× 7 2.3k

Countries citing papers authored by Simone Balatti

Since Specialization
Citations

This map shows the geographic impact of Simone Balatti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Simone Balatti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Simone Balatti more than expected).

Fields of papers citing papers by Simone Balatti

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Simone Balatti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Simone Balatti. The network helps show where Simone Balatti may publish in the future.

Co-authorship network of co-authors of Simone Balatti

This figure shows the co-authorship network connecting the top 25 collaborators of Simone Balatti. A scholar is included among the top collaborators of Simone Balatti based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Simone Balatti. Simone Balatti is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Adinolfi, Valerio, Lanxia Cheng, Mario Laudato, et al.. (2019). Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance. ACS Nano. 13(9). 10440–10447. 35 indexed citations
2.
Balatti, Simone, Stefano Ambrogio, Roberto Carboni, et al.. (2016). Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices. IEEE Transactions on Electron Devices. 63(5). 2029–2035. 100 indexed citations
3.
Ambrogio, Stefano, Valerio Milo, Zhongqiang Wang, Simone Balatti, & Daniele Ielmini. (2016). Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM). IEEE Electron Device Letters. 37(10). 1268–1271. 22 indexed citations
4.
Ambrogio, Stefano, Simone Balatti, Valerio Milo, et al.. (2016). Novel RRAM-enabled 1T1R synapse capable of low-power STDP via burst-mode communication and real-time unsupervised machine learning. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 1–2. 32 indexed citations
5.
Balatti, Simone, Stefano Ambrogio, Zhongqiang Wang, et al.. (2015). Understanding pulsed-cycling variability and endurance in HfO<inf>x</inf> RRAM. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 5B.3.1–5B.3.6. 16 indexed citations
6.
Wang, Zhongqiang, Stefano Ambrogio, Simone Balatti, & Daniele Ielmini. (2015). A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems. Frontiers in Neuroscience. 8. 438–438. 66 indexed citations
7.
Ambrogio, Stefano, Simone Balatti, Zhongqiang Wang, et al.. (2015). Data retention statistics and modelling in HfO<inf>2</inf> resistive switching memories. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 100. MY.7.1–MY.7.6. 20 indexed citations
8.
Ielmini, Daniele, Stefano Ambrogio, & Simone Balatti. (2014). Scaling of oxide-based resistive switching devices. 1–4. 2 indexed citations
9.
Balatti, Simone, Stefano Ambrogio, Zhongqiang Wang, et al.. (2014). Pulsed cycling operation and endurance failure of metal-oxide resistive (RRAM). Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 14.3.1–14.3.4. 32 indexed citations
10.
Ambrogio, Stefano, et al.. (2014). Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise. IEEE Transactions on Electron Devices. 61(8). 2920–2927. 106 indexed citations
11.
Ambrogio, Stefano, et al.. (2014). Statistical modeling of program and read variability in resistive switching devices. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 759. 2029–2032. 4 indexed citations
12.
Ambrogio, Stefano, Simone Balatti, D. C. Gilmer, & Daniele Ielmini. (2014). Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches. IEEE Transactions on Electron Devices. 61(7). 2378–2386. 120 indexed citations
13.
Ambrogio, Stefano, Simone Balatti, F. Nardi, Stefano Facchinetti, & Daniele Ielmini. (2013). Spike-timing dependent plasticity in a transistor-selected resistive switching memory. Nanotechnology. 24(38). 384012–384012. 81 indexed citations
14.
Ielmini, Daniele, Simone Balatti, & Stefano Larentis. (2013). Filament Evolution during Set and Reset Transitions in Oxide Resistive Switching Memory. Japanese Journal of Applied Physics. 52(4S). 04CD10–04CD10. 6 indexed citations
15.
Balatti, Simone, Stefano Larentis, D. C. Gilmer, & Daniele Ielmini. (2013). Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament. Advanced Materials. 25(10). 1474–1478. 143 indexed citations
16.
Balatti, Simone, Stefano Ambrogio, D. C. Gilmer, & Daniele Ielmini. (2013). Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM. IEEE Electron Device Letters. 34(7). 861–863. 59 indexed citations
17.
Ielmini, Daniele, Stefano Larentis, & Simone Balatti. (2012). Physical modeling of voltage-driven resistive switching in oxide RRAM. Virtual Community of Pathological Anatomy (University of Castilla La Mancha). 56. 9–15. 6 indexed citations
18.
Nardi, F., Simone Balatti, Stefano Larentis, D. C. Gilmer, & Daniele Ielmini. (2012). Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory. IEEE Transactions on Electron Devices. 60(1). 70–77. 83 indexed citations
19.
Nardi, F., Stefano Larentis, Simone Balatti, D. C. Gilmer, & Daniele Ielmini. (2012). Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study. IEEE Transactions on Electron Devices. 59(9). 2461–2467. 155 indexed citations
20.
Nardi, F., Simone Balatti, Stefano Larentis, & Daniele Ielmini. (2011). Complementary switching in metal oxides: Toward diode-less crossbar RRAMs. 31.1.1–31.1.4. 57 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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