P.J. Tobin

1.3k citations

42 papers · 883 indexed · h-index 13

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 33
- Advancements in Semiconductor Devices and Circuit Design 24
- Integrated Circuits and Semiconductor Failure Analysis 20
- Silicon and Solar Cell Technologies 5
- Ferroelectric and Negative Capacitance Devices 3
- Thin-Film Transistor Technologies 3
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 5
Surfaces, Coatings and Films
Materials Chemistry
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 4

Co-authors: H.‐H. Tseng J. M. Grant R. I. Hegde D. C. Gilmer Dina H. Triyoso Rachel E. White Sheena D. Brown B. E. White
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Surfaces, Coatings and Films
Journals: Journal of The Electrochemical Society (6 papers)IEEE Transactions on Electron Devices (5 papers)IEEE Transactions on Device and Materials Reliability (2 papers)
Partner nations: United States

In The Last Decade

P.J. Tobin

38 papers receiving 829 citations

Peers

Countries citing papers authored by P.J. Tobin

Since Specialization

Citations

This map shows the geographic impact of P.J. Tobin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.J. Tobin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.J. Tobin more than expected).

Fields of papers citing papers by P.J. Tobin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.J. Tobin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.J. Tobin. The network helps show where P.J. Tobin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P.J. Tobin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.J. Tobin Line = papers co-authored together P.J. Tobin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Keep them breathing JAAPA ·Sheena D. Brown,Rachel E. White,P.J. Tobin	2017	54
2	Interface dipole and effective work function of Re in Re∕HfO2∕SiOx∕n-Si gate stack Applied Physics Letters ·Yong Liang,J. Curless,Clarence J. Tracy,D. C. Gilmer,J. Schaeffer,Dina H. Triyoso,P.J. Tobin	2006	25
3	Special reliability features for Hf-based high-/spl kappa/ gate dielectrics IEEE Transactions on Device and Materials Reliability ·T.P. Ma,H. Bu,X.W. Wang,Melia sri devi,Wei He,Miaomiao Wang,H.‐H. Tseng,P.J. Tobin	2005	43
4	BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments IEEE Transactions on Device and Materials Reliability ·S. Kalpat,Hsing‐Huang Tseng,M. Ramón,Mohamed Solih,D. Tekleab,P.J. Tobin,D. C. Gilmer,R. I. Hegde,C. Capasso,Clarence J. Tracy,B. E. White	2005	20
5	Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II IEEE Transactions on Electron Devices ·C. C. Hobbs,L. R. C. Fonseca,A. A. Knizhnik,V. Dhandapani,S. Samavedam,W. Taylor,J. M. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,M. L. Lovejoy,R. Rai,E.A. Hebert,H.‐H. Tseng,S.G.H. Anderson,B. E. White,P.J. Tobin	2004	135
6	Effect of polySi/high-K interfce on device reliability X.W. Wang,江尻正員,T.P. Ma,H.‐H. Tseng,P.J. Tobin	2004	1
7	Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I IEEE Transactions on Electron Devices ·C. C. Hobbs,L. R. C. Fonseca,A. A. Knizhnik,V. Dhandapani,S. Samavedam,W. Taylor,J. M. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,M. L. Lovejoy,R. Rai,E.A. Hebert,H.‐H. Tseng,S.G.H. Anderson,B. E. White,P.J. Tobin	2004	182
8	Suppression of MOSFET reverse short channel effect by N/sub 2/O gate poly reoxidation process Pei-Ling Tsui,N.I. Tsytsyura,M. Orłowski,Shih-Wei Sun,P.J. Tobin,K. Reid,W. Taylor	2002	1
9	Reverse antenna effect due to process-induced quasi-breakdown of gate oxide Yaxiong Fang,Jiangang Zheng,P.J. Tobin,Yoshiyuki Yamada,Chenming Hu	2002	0
10	Advantages of CVD stacked gate oxide for robust 0.5 mu m transistors Hsing‐Huang Tseng,P.J. Tobin,Danny Mathew,O.V. Koreneva	2002	0
11	Elevated source drain devices using silicon selective epitaxial growth Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Srikanth Samavedam,Wang Zuo-h,Muhammad Rizky Fahrizal Putra,P.J. Tobin,Abdulmageed M Kambal,William J. Taylor,Érick Soares dos Reis	2000	9
12	0.18 /spl mu/m metal gate fully-depleted SOI MOSFETs for advanced CMOS applications Berrío López,B. Maiti,Daniel Connelly,Chongliang Zheng,Fanghao Huang,Érick Soares dos Reis,人事労務,Kueh Hwa Ik,Wen-Fa Wu,C Scuderi,D.G. Dow,P.J. Tobin,J. Mogab	1999	11
13	Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO/sub 2/ gate dielectric formed by titanium oxidation Chris Hobbs,R. I. Hegde,B. Maiti,Hsin Tseng,D. C. Gilmer,P.J. Tobin,Érick Soares dos Reis,عامر عبداللطيف حسين,Kueh Hwa Ik,Arik Messermann,Daniel Jesper,K. Reid,L.B. La,Sumiyo Tanigawa,D. Kim	1999	2
14	Measurement of N in nitrided oxides using spectroscopic immersion ellipsometry Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·E. A. Irene,Mariana Justino Msugossa,W. M. Paulson,P.J. Tobin,R. I. Hegde	1996	8
15	A highly robust process integration with scaled ONO interpoly dielectrics for embedded nonvolatile memory applications IEEE Transactions on Electron Devices ·D. Shum,N.I. Tsytsyura,W. M. Paulson,O.V. Koreneva,P.J. Tobin	1995	6
16	Auger electron spectroscopy and Rutherford backscattering characterization of TiNx/TiSiy contact barrier metallization Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. Kottke,R. B. Gregory,박철선,P. Kerschl,P.J. Tobin	1991	21
17	The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices IEEE Transactions on Electron Devices ·J.R. Pfiester,F.K. Baker,T.C. Mele,H.‐H. Tseng,P.J. Tobin,J.D. Hayden,James W. Miller,C.D. Gunderson,L.C. Parrillo	1990	151
18	Influences of Processing Chemistry of Silicon Nitride Films on the Charge Trapping Behavior of Oxide/CVD‐Nitride/Oxide Capacitors Journal of The Electrochemical Society ·Bich-Yen Nguyen,P.J. Tobin,Tian-Tian Shan,Harland G. Tompkins,Peter Lengsfeld	1988	4
19	Antimony Diffusion in Silicon: Effects of Ambient Gas and Time Journal of The Electrochemical Society ·박철선,P.J. Tobin,M. Kottke,J. B. Price	1984	0
20	Thermal Characteristics of the H 2 SO 4 ‐ H 2 O 2 Silicon Wafer Cleaning Solution Journal of The Electrochemical Society ·박철선,J. B. Price,P.J. Tobin,Ms. Ruchi Khandelwal,Rps Baghel	1979	29

About P.J. Tobin

P.J. Tobin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 42 papers that have together received 883 indexed citations. Recurring topics across this work include Semiconductor materials and devices (33 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers), Integrated Circuits and Semiconductor Failure Analysis (20 papers), Semiconductor materials and interfaces (5 papers), Silicon and Solar Cell Technologies (5 papers), Copper Interconnects and Reliability (4 papers), Ferroelectric and Negative Capacitance Devices (3 papers) and Thin-Film Transistor Technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (791 citations), Atomic and Molecular Physics, and Optics (178 citations) and Surfaces, Coatings and Films (27 citations). P.J. Tobin has collaborated with scholars based in United States. Frequent co-authors include H.‐H. Tseng, J. M. Grant, R. I. Hegde, D. C. Gilmer, Dina H. Triyoso, Rachel E. White, Sheena D. Brown, B. E. White, James W. Miller and J.D. Hayden. Their work appears in journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and IEEE Electron Device Letters.

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