Paul Kirsch

859 total citations
62 papers, 685 citations indexed

About

Paul Kirsch is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Paul Kirsch has authored 62 papers receiving a total of 685 indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Electrical and Electronic Engineering, 11 papers in Biomedical Engineering and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Paul Kirsch's work include Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (40 papers) and Ferroelectric and Negative Capacitance Devices (20 papers). Paul Kirsch is often cited by papers focused on Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (40 papers) and Ferroelectric and Negative Capacitance Devices (20 papers). Paul Kirsch collaborates with scholars based in United States, South Korea and United Kingdom. Paul Kirsch's co-authors include Kausik Majumdar, Byoung Hun Lee, Chris Hobbs, Lingming Yang, Han Liu, Jingyun Zhang, Yuchen Du, Peide D. Ye, G. Bersuker and Rino Choi and has published in prestigious journals such as Journal of the American Chemical Society, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Paul Kirsch

60 papers receiving 666 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Paul Kirsch United States 14 545 266 97 88 62 62 685
Emre Sarı Türkiye 11 332 0.6× 389 1.5× 68 0.7× 111 1.3× 111 1.8× 19 496
Y. Shishkin United States 11 400 0.7× 213 0.8× 82 0.8× 45 0.5× 26 0.4× 28 486
Sabri Alkis Türkiye 12 229 0.4× 265 1.0× 112 1.2× 50 0.6× 50 0.8× 28 386
Mohd Syamsul Japan 11 367 0.7× 300 1.1× 64 0.7× 47 0.5× 146 2.4× 35 505
Huai Yang China 11 302 0.6× 388 1.5× 79 0.8× 53 0.6× 23 0.4× 19 484
Ghulam Hussain Pakistan 17 277 0.5× 544 2.0× 79 0.8× 159 1.8× 65 1.0× 36 648
Liangmei Wu China 12 298 0.5× 427 1.6× 70 0.7× 111 1.3× 30 0.5× 21 538
Jamie Wilt United States 11 193 0.4× 220 0.8× 58 0.6× 75 0.9× 80 1.3× 16 347
Ruoyu Yue United States 12 348 0.6× 658 2.5× 60 0.6× 155 1.8× 34 0.5× 13 746
Huang-Yu Lin Taiwan 6 238 0.4× 207 0.8× 84 0.9× 68 0.8× 137 2.2× 10 362

Countries citing papers authored by Paul Kirsch

Since Specialization
Citations

This map shows the geographic impact of Paul Kirsch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Paul Kirsch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Paul Kirsch more than expected).

Fields of papers citing papers by Paul Kirsch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Paul Kirsch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Paul Kirsch. The network helps show where Paul Kirsch may publish in the future.

Co-authorship network of co-authors of Paul Kirsch

This figure shows the co-authorship network connecting the top 25 collaborators of Paul Kirsch. A scholar is included among the top collaborators of Paul Kirsch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Paul Kirsch. Paul Kirsch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Baek, Rock‐Hyun, et al.. (2014). Investigation of process-induced performance variability and optimization of the 10nm technology node Si bulk FinFETs. Solid-State Electronics. 96. 27–33. 6 indexed citations
2.
Yuan, Ze, Chien‐Yu Chen, Aneesh Nainani, et al.. (2013). Optimal device architecture and hetero-integration scheme for III–V CMOS. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 3 indexed citations
3.
Kang, Chang Yong, Chang-Woo Sohn, Rock‐Hyun Baek, et al.. (2013). Effects of layout and process parameters on device/circuit performance and variability for 10nm node FinFET technology. Symposium on VLSI Technology. 2013. 71–72. 4 indexed citations
4.
Kim, Dae-Hyun, Tae‐Woo Kim, Richard J. Hill, et al.. (2013). High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications. IEEE Electron Device Letters. 34(2). 196–198. 14 indexed citations
5.
Majumdar, Kausik, C. Huffman, T. Ngai, et al.. (2013). STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity. IEEE Electron Device Letters. 34(9). 1082–1084. 17 indexed citations
6.
Oh, Jungwoo, Kanghoon Jeon, Se‐Hoon Lee, et al.. (2012). High mobility CMOS transistors on Si/SiGe heterostructure channels. Microelectronic Engineering. 97. 26–28. 6 indexed citations
7.
Akarvardar, Kerem, Chadwin D. Young, Injo Ok, et al.. (2012). Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities. IEEE Electron Device Letters. 33(3). 351–353. 13 indexed citations
8.
9.
Lee, Se‐Hoon, Prashant Majhi, D. Ferrer, et al.. (2011). Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate. IEEE Transactions on Electron Devices. 58(9). 2917–2923. 1 indexed citations
10.
Hill, Richard J., Jungwoo Oh, Joel Barnett, et al.. (2011). CMOS Scaling with III-V Channels for Improved Performance and Low Power. ECS Transactions. 35(3). 335–344. 2 indexed citations
11.
Park, Chang Seo, G. Bersuker, P. Y. Hung, Paul Kirsch, & Raj Jammy. (2010). Impact of Oxygen on Work Function of Ru Oxide Metal Gate. Electrochemical and Solid-State Letters. 13(4). H105–H105. 6 indexed citations
12.
Tseng, Hsing‐Huang, Paul Kirsch, G. Bersuker, et al.. (2009). The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper). Microelectronic Engineering. 86(7-9). 1722–1727. 17 indexed citations
13.
Bersuker, G., D. C. Gilmer, Andrea Padovani, et al.. (2009). A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–2. 7 indexed citations
14.
15.
Jo, Minseok, Hyejung Choi, Musarrat Hasan, et al.. (2008). The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices. IEEE Electron Device Letters. 29(1). 54–56. 12 indexed citations
16.
Hussain, Muhammad M., Ji‐Woon Yang, Paul Kirsch, et al.. (2007). Dual work function high-k/Metal Gate CMOS FinFETs. 46. 207–209. 5 indexed citations
17.
Majhi, Prashant, Dawei Heh, G. Bersuker, et al.. (2007). Impact of flash annealing on performance and reliability of high-κ/metal-gate MOSFETs for sub-45 nm CMOS. 353–356. 5 indexed citations
18.
Lee, Byoung Hun, et al.. (2006). Gate stack technology for nanoscale devices. 206–207. 2 indexed citations
19.
Amy, Sandrine Rivillon, et al.. (2006). Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics. MRS Proceedings. 917. 17 indexed citations
20.
Krishnan, Siddarth, Manuel Quevedo-López, Paul Kirsch, et al.. (2006). Impact of Nitrogen on PBTI Characteristics of HfSiON/TiN Gate Stacks. 5. 325–328. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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