C. Capasso

1.7k total citations
78 papers, 1.1k citations indexed

About

C. Capasso is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C. Capasso has authored 78 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 23 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C. Capasso's work include Semiconductor materials and devices (29 papers), Copper Interconnects and Reliability (21 papers) and Electron and X-Ray Spectroscopy Techniques (20 papers). C. Capasso is often cited by papers focused on Semiconductor materials and devices (29 papers), Copper Interconnects and Reliability (21 papers) and Electron and X-Ray Spectroscopy Techniques (20 papers). C. Capasso collaborates with scholars based in United States, Italy and Switzerland. C. Capasso's co-authors include C. M. Aldao, J. H. Weaver, G. D. Waddill, I. M. Vitomirov, Steven G. Anderson, H. Kawasaki, G. Margaritondo, P. Perfetti, F. Patella and C. Quaresima and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

C. Capasso

73 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Capasso United States 22 679 457 265 254 238 78 1.1k
P. R. Bressler Germany 16 451 0.7× 650 1.4× 501 1.9× 135 0.5× 277 1.2× 27 1.2k
A. Kahn United States 18 1.2k 1.7× 498 1.1× 416 1.6× 189 0.7× 127 0.5× 43 1.5k
J. Vrijmoeth Netherlands 20 696 1.0× 847 1.9× 382 1.4× 155 0.6× 117 0.5× 29 1.5k
J. P. Long United States 14 397 0.6× 262 0.6× 318 1.2× 112 0.4× 162 0.7× 25 780
Akira Kawazu Japan 20 386 0.6× 798 1.7× 280 1.1× 156 0.6× 207 0.9× 73 1.1k
P. E. Freeland United States 18 661 1.0× 560 1.2× 566 2.1× 135 0.5× 120 0.5× 26 1.2k
H. I. Starnberg Sweden 23 796 1.2× 541 1.2× 887 3.3× 381 1.5× 273 1.1× 80 1.5k
P. E. Batson United States 15 772 1.1× 463 1.0× 644 2.4× 526 2.1× 112 0.5× 38 1.5k
H. Namba Japan 16 321 0.5× 256 0.6× 437 1.6× 178 0.7× 118 0.5× 64 783
A. Mazur Germany 20 790 1.2× 892 2.0× 1.1k 4.0× 272 1.1× 194 0.8× 50 1.8k

Countries citing papers authored by C. Capasso

Since Specialization
Citations

This map shows the geographic impact of C. Capasso's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Capasso with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Capasso more than expected).

Fields of papers citing papers by C. Capasso

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Capasso. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Capasso. The network helps show where C. Capasso may publish in the future.

Co-authorship network of co-authors of C. Capasso

This figure shows the co-authorship network connecting the top 25 collaborators of C. Capasso. A scholar is included among the top collaborators of C. Capasso based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Capasso. C. Capasso is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hughes, H.L., et al.. (2010). Total dose radiation response of a 45nm SOI Technology. 45. 1–2. 11 indexed citations
2.
Schaeffer, J., C. Capasso, R. Gregory, et al.. (2007). Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics. Journal of Applied Physics. 101(1). 41 indexed citations
3.
Kalpat, S., Hsing‐Huang Tseng, M. Ramón, et al.. (2005). BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments. IEEE Transactions on Device and Materials Reliability. 5(1). 26–35. 20 indexed citations
4.
Underwood, J. H., J. B. Kortright, R. C. C. Perera, et al.. (1994). X-Ray Microscopy with Multilayer Mirrors - the Maximum Photoelectron Microscope. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 601–609. 1 indexed citations
5.
Cerrina, F., A. K. Raychaudhuri, W. Ng, et al.. (1993). Microscopic-scale lateral inhomogeneities of the photoemission response of cleaved GaAs. Applied Physics Letters. 63(1). 63–65. 21 indexed citations
6.
Ray-Chaudhuri, Avijit K., W. Ng, Simrjit Singh, et al.. (1993). First results of microspectroscopy from a scanning photoemission microscope with a submicron probe size. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 11(4). 2324–2329. 21 indexed citations
7.
Stasió, Gelsomina De, P. Perfetti, W. Ng, et al.. (1993). Scanning photoemission spectromicroscopy of neurons. Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics. 48(2). 1478–1482. 2 indexed citations
8.
Capasso, C., W. Ng, Avijit K. Ray-Chaudhuri, et al.. (1993). Scanning photoemission microscopy on MAXIMUM reaches 0.1 micron resolution. Surface Science. 287-288. 1046–1050. 11 indexed citations
9.
Vitomirov, I. M., C. M. Aldao, G. D. Waddill, C. Capasso, & J. H. Weaver. (1990). Metal-InP(110) interface properties: Temperature, dopant-concentration, and cluster-deposition dependencies. Physical review. B, Condensed matter. 41(12). 8465–8476. 14 indexed citations
10.
Waddill, G. D., I. M. Vitomirov, C. M. Aldao, et al.. (1990). Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctions. Physical review. B, Condensed matter. 41(8). 5293–5305. 42 indexed citations
11.
Aldao, C. M., G. D. Waddill, P. J. Benning, C. Capasso, & J. H. Weaver. (1990). Photovoltaic effects in temperature-dependent Fermi-level movement for GaAs(110). Physical review. B, Condensed matter. 41(9). 6092–6095. 27 indexed citations
12.
Aldao, C. M., C. Capasso, Yoram Shapira, et al.. (1989). Development of rare-earth–semiconductor interfaces: Ce/InP(110), Sm/InSb(110), and Ce/CdTe(110). Physical review. B, Condensed matter. 40(14). 9811–9817. 6 indexed citations
13.
Gao, Yankun, I. M. Vitomirov, C. M. Aldao, et al.. (1988). Synchrotron-radiation photoemission studies of interface formation between metals and superconductors: Al and In onYBa2Cu3O6.9. Physical review. B, Condensed matter. 37(7). 3741–3744. 14 indexed citations
14.
Wagener, T. J., Yankun Gao, I. M. Vitomirov, et al.. (1988). Disruption, segregation, and passivation for Pd and noble-metal overlayers on YBa2Cu3O6.9. Physical review. B, Condensed matter. 38(1). 232–239. 33 indexed citations
15.
Arko, A. J., D. D. Koelling, C. Capasso, M. del Giudice, & C. G. Olson. (1988). Imaging of 5fdensities of states in resonant photoemission measurements. Physical review. B, Condensed matter. 38(3). 1627–1631. 23 indexed citations
16.
Boscherini, F., Yoram Shapira, C. Capasso, C. M. Aldao, & J. H. Weaver. (1987). Cr/InSb(110): A study of interface development with high-resolution core-level photoemission. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 1003–1006. 8 indexed citations
17.
Perfetti, P., C. Quaresima, C. Capasso, et al.. (1986). Electronic properties of the precrystallization regime of germanium: A photoemission study. Physical review. B, Condensed matter. 33(10). 6998–7005. 6 indexed citations
18.
Perfetti, P., F. Patella, F. Sette, et al.. (1984). Experimental study of the GaP-Si interface. Physical review. B, Condensed matter. 30(8). 4533–4539. 42 indexed citations
19.
Fortunato, G., A. D’Amico, C. Coluzza, et al.. (1984). Detection of hydrogen induced Schottky barrier modulation in Pd/SiOx/a-Si:H diodes by photoemission with synchrotron radiation. Applied Physics Letters. 44(9). 887–889. 9 indexed citations
20.
Sette, F., P. Perfetti, F. Patella, et al.. (1983). Resonant photoemission from surface states in GaP. Physical review. B, Condensed matter. 28(8). 4882–4885. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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