Adrian M. Ionescu

12.7k total citations · 1 hit paper
473 papers, 9.6k citations indexed

About

Adrian M. Ionescu is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Adrian M. Ionescu has authored 473 papers receiving a total of 9.6k indexed citations (citations by other indexed papers that have themselves been cited), including 385 papers in Electrical and Electronic Engineering, 155 papers in Biomedical Engineering and 123 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Adrian M. Ionescu's work include Semiconductor materials and devices (203 papers), Advancements in Semiconductor Devices and Circuit Design (197 papers) and Nanowire Synthesis and Applications (82 papers). Adrian M. Ionescu is often cited by papers focused on Semiconductor materials and devices (203 papers), Advancements in Semiconductor Devices and Circuit Design (197 papers) and Nanowire Synthesis and Applications (82 papers). Adrian M. Ionescu collaborates with scholars based in Switzerland, France and United States. Adrian M. Ionescu's co-authors include Heike Riel, Kathy Boucart, Luca De Michielis, Livio Lattanzio, Giovanni A. Salvatore, Santanu Mahapatra, Kirsten E. Moselund, Alexandru Rusu, Didier Bouvet and Julien Perruisseau‐Carrier and has published in prestigious journals such as Nature, Physical Review Letters and Nature Communications.

In The Last Decade

Adrian M. Ionescu

445 papers receiving 9.2k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Tunnel field-effect transistors as energy-efficient electronic switches

2011 2.2k citations Adrian M. Ionescu et al. profile →

Peers

Countries citing papers authored by Adrian M. Ionescu

Since Specialization

Citations

This map shows the geographic impact of Adrian M. Ionescu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Adrian M. Ionescu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Adrian M. Ionescu more than expected).

Fields of papers citing papers by Adrian M. Ionescu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Adrian M. Ionescu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Adrian M. Ionescu. The network helps show where Adrian M. Ionescu may publish in the future.

Co-authorship network of co-authors of Adrian M. Ionescu

This figure shows the co-authorship network connecting the top 25 collaborators of Adrian M. Ionescu. A scholar is included among the top collaborators of Adrian M. Ionescu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Adrian M. Ionescu. Adrian M. Ionescu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Scalable enzymatic lactate sensor for continuous monitoring in interstitial fluid 2024 ·European Heart Journal ·(unknown), Ali Saeidi, Sara Sheibani, Didier Locca, Adrian M. Ionescu	1
2	Graphene-enhanced ferroelectric domain wall high-output memristor 2024 ·Applied Physics Letters ·(unknown), A. Ghanadzadeh Gilani, Sadegh Kamaei, Adrian M. Ionescu, Igor Stolichnov	4
3	Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation 2023 ·Applied Surface Science ·Denis E. Tranca, Stefan G. Stanciu, Radu Hristu, Adrian M. Ionescu, George A. Stanciu	7
4	Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse 2023 ·IEEE Electron Device Letters ·(unknown), Sadegh Kamaei, Matteo Cavalieri, Ali Saeidi, Igor Stolichnov, Ionut Radu, Adrian M. Ionescu	5
5	Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3 2022 ·Nature Communications ·(unknown), (unknown), Igor Lukyanchuk, Adrian M. Ionescu, Igor Stolichnov	18
6	Defect-induced magnetism in homoepitaxial SrTiO3 2022 ·APL Materials ·A. D. Rata, Javier Herrero‐Martín, I. V. Maznichenko, Francesco Chiabrera, (unknown), S. Ostanin, Dooyong Lee, Bharat Jalan, P. Buczek, Ingrid Mertig, A. Ernst, Adrian M. Ionescu, K. Dörr, Nini Pryds, Daesung Park	11
7	Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor 2021 ·Applied Physics Letters ·(unknown), Matteo Cavalieri, Ali Saeidi, Éamon O’Connor, Sadegh Kamaei, (unknown), Igor Stolichnov, Adrian M. Ionescu	15
8	Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures 2021 ·npj 2D Materials and Applications ·Sadegh Kamaei, Ali Saeidi, (unknown), (unknown), (unknown), Matteo Cavalieri, Adrian M. Ionescu	19
9	Radio-Frequency Characteristics of Ge-Doped Vanadium Dioxide Thin Films with Increased Transition Temperature 2020 ·ACS Applied Electronic Materials ·Andrei A. Müller, Riyaz Abdul Khadar, Tobias Abel, (unknown), (unknown), Anna Krammer, Matteo Cavalieri, Andreas Schueler, (unknown), Jens Bolten, Max C. Lemme, Igor Stolichnov, Adrian M. Ionescu	16
10	Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect 2020 ·IEEE Journal of the Electron Devices Society ·(unknown), Jean-Michel Sallèse, Farzan Jazaeri, Morteza Fathipour, Adrian M. Ionescu	40
11	Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO₂ in a CMOS BEOL Compatible Process 2020 ·ACS Applied Electronic Materials ·Matteo Cavalieri, Éamon O’Connor, (unknown), Igor Stolichnov, Adrian M. Ionescu	18
12	An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe₂ Hetero-Junction 2020 ·IEEE Electron Device Letters ·Sadegh Kamaei, Ali Saeidi, Farzan Jazaeri, (unknown), (unknown), Matteo Cavalieri, (unknown), Adrian M. Ionescu	14
13	Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures 2020 ·Applied Physics Letters ·Igor Stolichnov, Matteo Cavalieri, (unknown), Michael Hoffmann, Uwe Schroeder, Thomas Mikolajick, Adrian M. Ionescu	10
14	Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric 2019 ·IEEE Journal of the Electron Devices Society ·(unknown), Yu. Yu. Illarionov, (unknown), Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu	6
15	Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf_xZr_(1–x)O₂ Ultrathin Capacitors 2018 ·ACS Applied Materials & Interfaces ·Igor Stolichnov, Matteo Cavalieri, Enrico Colla, Tony Schenk, Terence Mittmann, Thomas Mikolajick, Uwe Schroeder, Adrian M. Ionescu	46
16	Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes 2018 ·IEEE Journal of the Electron Devices Society ·(unknown), (unknown), Wolfgang A. Vitale, Igor Stolichnov, Adrian M. Ionescu	6
17	Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron–Hole Bilayer Tunneling Field-Effect Transistor 2018 ·IEEE Transactions on Electron Devices ·J. L. Padilla, Cristina Medina-Bailón, Carlos Márquez, C. Sampedro, Luca Donetti, F. Gámiz, Adrian M. Ionescu	9
18	Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study 2017 ·IEEE Electron Device Letters ·Ali Saeidi, Farzan Jazaeri, (unknown), Igor Stolichnov, Gia Vinh Luong, Qing‐Tai Zhao, S. Mantl, Christian Enz, Adrian M. Ionescu	66
19	Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions 2017 ·IEEE Transactions on Electron Devices ·Arnab Biswas, Gia Vinh Luong, M.F. Chowdhury, Cem Alper, Qing‐Tai Zhao, Florin Udrea, S. Mantl, Adrian M. Ionescu	11
20	Dual-band Terahertz reflectarray integrated on a silicon substrate 2016 ·International Symposium on Antennas and Propagation ·Hamed Hasani, S. Capdevila, Michele Tamagnone, Clara F. Moldovan, Wolfgang A. Vitale, Adrian M. Ionescu, C. Peixeiro, Anja K. Skrivervik, J. R. Mosig	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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