F. Driussi

1.5k total citations
104 papers, 1.2k citations indexed

About

F. Driussi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. Driussi has authored 104 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 99 papers in Electrical and Electronic Engineering, 35 papers in Materials Chemistry and 17 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. Driussi's work include Semiconductor materials and devices (72 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers) and Advanced Memory and Neural Computing (30 papers). F. Driussi is often cited by papers focused on Semiconductor materials and devices (72 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers) and Advanced Memory and Neural Computing (30 papers). F. Driussi collaborates with scholars based in Italy, Germany and Belgium. F. Driussi's co-authors include David Esseni, L. Selmi, Pierpaolo Palestri, M.J. van Duuren, A. Arreghini, Elisa Vianello, N. Akil, Max C. Lemme, Sabina Spiga and Alessio Lamperti and has published in prestigious journals such as Journal of Applied Physics, Sensors and IEEE Transactions on Electron Devices.

In The Last Decade

F. Driussi

102 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Driussi Italy 19 1.0k 437 136 104 44 104 1.2k
Yoshinobu Mitsuhashi Japan 14 386 0.4× 117 0.3× 263 1.9× 47 0.5× 12 0.3× 45 474
L.M. Lunardi United States 20 1.1k 1.1× 199 0.5× 617 4.5× 123 1.2× 13 0.3× 72 1.3k
Mattias Kruskopf Germany 17 466 0.5× 497 1.1× 414 3.0× 140 1.3× 42 1.0× 55 792
R. Steingrüber Germany 11 442 0.4× 131 0.3× 272 2.0× 62 0.6× 17 0.4× 43 540
Kazunori Shinoda Japan 19 802 0.8× 141 0.3× 396 2.9× 77 0.7× 4 0.1× 106 974
Yue Xu China 12 349 0.3× 98 0.2× 83 0.6× 23 0.2× 37 0.8× 60 419
K.R. Hofmann Germany 17 931 0.9× 253 0.6× 315 2.3× 95 0.9× 11 0.3× 64 1.0k
Taisuke Iwai Japan 16 591 0.6× 234 0.5× 115 0.8× 74 0.7× 13 0.3× 50 717
Ying-Hao Kuo United States 17 1.6k 1.6× 190 0.4× 944 6.9× 212 2.0× 5 0.1× 41 1.7k
Wenjing Cheng China 9 186 0.2× 217 0.5× 126 0.9× 49 0.5× 39 0.9× 41 412

Countries citing papers authored by F. Driussi

Since Specialization
Citations

This map shows the geographic impact of F. Driussi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Driussi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Driussi more than expected).

Fields of papers citing papers by F. Driussi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Driussi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Driussi. The network helps show where F. Driussi may publish in the future.

Co-authorship network of co-authors of F. Driussi

This figure shows the co-authorship network connecting the top 25 collaborators of F. Driussi. A scholar is included among the top collaborators of F. Driussi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Driussi. F. Driussi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lizzit, Daniel, Marco Pala, F. Driussi, & David Esseni. (2024). Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations. IEEE Transactions on Electron Devices. 71(5). 3301–3306. 3 indexed citations
2.
Palestri, Pierpaolo, et al.. (2024). Compact expression to model the effects of dielectric absorption on analog-to-digital converters. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–5.
3.
4.
Driussi, F., Antonio Affanni, Suzanne Lancaster, et al.. (2023). Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions. Institutional Research Information System (University of Udine). 1–6. 2 indexed citations
5.
Lancaster, Suzanne, F. Driussi, L. Grenouillet, et al.. (2022). Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions. IEEE Journal of the Electron Devices Society. 10. 593–599. 12 indexed citations
6.
Driussi, F., Ines Häusler, Christoph T. Koch, et al.. (2022). Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation. IEEE Transactions on Electron Devices. 69(7). 3694–3699. 16 indexed citations
7.
Antonelli, M., F. Arfelli, G. Biasiol, et al.. (2022). Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection. Frontiers in Physics. 10. 4 indexed citations
8.
Driussi, F., Antonio Affanni, Suzanne Lancaster, et al.. (2022). Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions. Solid-State Electronics. 200. 108569–108569. 2 indexed citations
9.
Specogna, Ruben, et al.. (2021). Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing. IEEE Journal of the Electron Devices Society. 9. 1202–1209. 18 indexed citations
10.
Selmi, L., M. Antonelli, F. Arfelli, et al.. (2020). A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 977. 164346–164346. 4 indexed citations
11.
Driussi, F., et al.. (2020). Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance. IEEE Transactions on Semiconductor Manufacturing. 33(2). 210–215. 11 indexed citations
12.
Antonelli, M., G. Cautero, R.H. Menk, et al.. (2019). Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation. AIP conference proceedings. 2054. 60064–60064. 1 indexed citations
13.
Ding, Lili, Simone Gerardin, A. Paccagnella, et al.. (2015). Effects of electrical stress and ionizing radiation on Si-based TFETs. Institutional Research Information System (University of Udine). 137–140. 3 indexed citations
14.
Driussi, F., et al.. (2014). Graphene base transistors with optimized emitter and dielectrics. Institutional Research Information System (University of Udine). 33–38. 5 indexed citations
15.
Vianello, Elisa, F. Driussi, P. Blaise, et al.. (2011). Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling. IEEE Transactions on Electron Devices. 58(8). 2490–2499. 44 indexed citations
16.
Driussi, F. & David Esseni. (2009). Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs. Institutional Research Information System (University of Udine). 48. 468–471. 1 indexed citations
17.
Arreghini, A., F. Driussi, Elisa Vianello, et al.. (2008). Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells. IEEE Transactions on Electron Devices. 55(5). 1211–1219. 37 indexed citations
18.
Driussi, F., David Esseni, L. Selmi, et al.. (2007). Experimental and Simulation Study of the Biaxial Strain and Temperature dependence of the Electron Mobility Enhancement in Si MOSFETs. Institutional Research Information System (University of Udine). 21–24. 2 indexed citations
19.
Arreghini, A., N. Akil, F. Driussi, et al.. (2007). Characterization and modeling of long term retention in SONOS non volatile memories. Institutional Research Information System (University of Udine). 406–409. 15 indexed citations
20.
Michielis, Marco De, David Esseni, & F. Driussi. (2007). Analytical Models for the Insight Into the Use of Alternative Channel Materials in Ballistic nano-MOSFETs. IEEE Transactions on Electron Devices. 54(1). 115–123. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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