Laura Vauche

466 total citations
41 papers, 322 citations indexed

About

Laura Vauche is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Laura Vauche has authored 41 papers receiving a total of 322 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 20 papers in Condensed Matter Physics and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Laura Vauche's work include Semiconductor materials and devices (21 papers), GaN-based semiconductor devices and materials (20 papers) and Chalcogenide Semiconductor Thin Films (13 papers). Laura Vauche is often cited by papers focused on Semiconductor materials and devices (21 papers), GaN-based semiconductor devices and materials (20 papers) and Chalcogenide Semiconductor Thin Films (13 papers). Laura Vauche collaborates with scholars based in France, Spain and Italy. Laura Vauche's co-authors include M. Pasquinelli, Monika Arasimowicz, P. Grand, Phillip J. Dale, Diego Colombara, R. Gwoziecki, Thomas Goislard de Monsabert, C. Le Royer, Edgardo Saucedo and J.S. Jaime-Ferrer and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

Laura Vauche

37 papers receiving 315 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Laura Vauche France 9 289 173 95 48 36 41 322
Wen-Ti Guo China 9 291 1.0× 157 0.9× 28 0.3× 143 3.0× 53 1.5× 25 379
An-Chen Liu Taiwan 8 176 0.6× 93 0.5× 81 0.9× 89 1.9× 24 0.7× 16 253
P. Reichel Germany 8 104 0.4× 57 0.3× 52 0.5× 81 1.7× 17 0.5× 9 185
Akinori Takeyama Japan 8 235 0.8× 116 0.7× 55 0.6× 112 2.3× 27 0.8× 28 328
Y. Senzaki United States 11 404 1.4× 168 1.0× 14 0.1× 51 1.1× 42 1.2× 24 445
Aubrey Penn United States 7 83 0.3× 93 0.5× 33 0.3× 57 1.2× 37 1.0× 23 165
Akhil Rajan United Kingdom 11 79 0.3× 181 1.0× 32 0.3× 53 1.1× 49 1.4× 26 239
Ajay Kumar Verma India 10 147 0.5× 228 1.3× 22 0.2× 129 2.7× 49 1.4× 22 296
Yuanzhao Yao Japan 7 288 1.0× 252 1.5× 9 0.1× 30 0.6× 109 3.0× 33 352
Woongki Na South Korea 6 163 0.6× 287 1.7× 18 0.2× 34 0.7× 46 1.3× 11 329

Countries citing papers authored by Laura Vauche

Since Specialization
Citations

This map shows the geographic impact of Laura Vauche's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Laura Vauche with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Laura Vauche more than expected).

Fields of papers citing papers by Laura Vauche

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Laura Vauche. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Laura Vauche. The network helps show where Laura Vauche may publish in the future.

Co-authorship network of co-authors of Laura Vauche

This figure shows the co-authorship network connecting the top 25 collaborators of Laura Vauche. A scholar is included among the top collaborators of Laura Vauche based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Laura Vauche. Laura Vauche is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Vauche, Laura, et al.. (2024). Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device. Sustainability. 16(2). 901–901. 18 indexed citations
3.
Vauche, Laura, et al.. (2024). Comparative Life Cycle Analysis of Redistribution Layer for 3D Integrations. SPIRE - Sciences Po Institutional REpository. 1–11.
4.
5.
Bassani, F., et al.. (2023). Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors. Advanced Electronic Materials. 10(3). 4 indexed citations
6.
Vauche, Laura, Stéphane Cadot, E. Martínez, et al.. (2023). Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices. Solid-State Electronics. 209. 108780–108780. 1 indexed citations
7.
Vauche, Laura, et al.. (2023). Effect of plasma process on n-GaN surface probed with electrochemical short loop. SHILAP Revista de lepidopterología. 6. 100041–100041. 1 indexed citations
8.
Veillerot, M., E. Martínez, D. Mariolle, et al.. (2023). Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM. Solid-State Electronics. 208. 108743–108743. 1 indexed citations
9.
Pimenta‐Barros, Patricia, et al.. (2023). Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations. SPIRE - Sciences Po Institutional REpository. 382–385. 2 indexed citations
10.
Vauche, Laura, et al.. (2023). Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors. Energies. 16(7). 2978–2978. 18 indexed citations
11.
Vauche, Laura, et al.. (2023). Comparative life cycle assessment of hybrid bonding and copper pillar die-to-wafer 3D integrations for sub-THz applications. HAL (Le Centre pour la Communication Scientifique Directe). 390–393. 2 indexed citations
12.
Legallais, Maxime, P. Besson, Laura Vauche, et al.. (2021). H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces. Applied Surface Science. 582. 152309–152309. 20 indexed citations
13.
Leroux, C., J. Cluzel, Laura Vauche, et al.. (2021). Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function. Solid-State Electronics. 184. 108078–108078. 7 indexed citations
14.
Vauche, Laura, et al.. (2021). Electrons irradiation of III-V//Si solar cells for NIRT conditions. Solar Energy Materials and Solar Cells. 223. 110975–110975. 3 indexed citations
15.
Cluzel, J., Laura Vauche, C. Le Royer, et al.. (2021). Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. SPIRE - Sciences Po Institutional REpository. 299–302.
16.
Gall, Sylvain Le, et al.. (2020). Understanding and monitoring the capacitance‐voltage technique for the characterization of tandem solar cells. Progress in Photovoltaics Research and Applications. 28(6). 601–608. 6 indexed citations
17.
Vauche, Laura, et al.. (2019). Luminescent coupling effect in wafer-bonded III-V on silicon multijunction solar cells. Journal of Photonics for Energy. 9(1). 1–1. 5 indexed citations
18.
Vauche, Laura, Alejandro Datas, Anne Kaminski‐Cachopo, et al.. (2019). Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration. Progress in Photovoltaics Research and Applications. 27(7). 652–661. 17 indexed citations
19.
Vauche, Laura, Monika Arasimowicz, Yudania Sánchez, et al.. (2016). Detrimental effect of Sn-rich secondary phases on Cu2ZnSnSe4 based solar cells. Journal of Renewable and Sustainable Energy. 8(3). 7 indexed citations
20.
Vauche, Laura, et al.. (2014). Rapid thermal processing annealing challenges for large scale Cu2ZnSnS4thin films. physica status solidi (a). 212(1). 103–108. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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