M. Bawedin

518 total citations
35 papers, 228 citations indexed

About

M. Bawedin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M. Bawedin has authored 35 papers receiving a total of 228 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in M. Bawedin's work include Advancements in Semiconductor Devices and Circuit Design (30 papers), Semiconductor materials and devices (30 papers) and Silicon Carbide Semiconductor Technologies (9 papers). M. Bawedin is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (30 papers), Semiconductor materials and devices (30 papers) and Silicon Carbide Semiconductor Technologies (9 papers). M. Bawedin collaborates with scholars based in France, Belgium and United Kingdom. M. Bawedin's co-authors include S. Cristoloveanu, Denis Flandre, Christian Renaux, Florin Udrea, Carlos Navarro, F. Mart́ınez, Philippe Galy, F. Andrieu, T. Ernst and Michael J. Uren and has published in prestigious journals such as Journal of Applied Physics, Thin Solid Films and Journal of Crystal Growth.

In The Last Decade

M. Bawedin

34 papers receiving 219 citations

Peers

M. Bawedin

EEE

AMPO

CMP

R.J.P. Lander Belgium

H.J. Tao Taiwan

Dimitris P. Ioannou United States

H. Takashima Japan

F. Assad United States

T. Salvetat France

A. Hamada Japan

V. Barral France

S.C. Chen Taiwan

H.-H. Vuong United States

R.J.P. Lander Belgium

M. Bawedin

300 ×1.4

EEE

55 ×1.7

AMPO

43 ×1.6

16 ×0.9

6 ×0.8

CMP

Citations per year, relative to M. Bawedin M. Bawedin (= 1×) peers R.J.P. Lander

Countries citing papers authored by M. Bawedin

Since Specialization

Citations

This map shows the geographic impact of M. Bawedin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Bawedin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Bawedin more than expected).

Fields of papers citing papers by M. Bawedin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Bawedin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Bawedin. The network helps show where M. Bawedin may publish in the future.

Co-authorship network of co-authors of M. Bawedin

This figure shows the co-authorship network connecting the top 25 collaborators of M. Bawedin. A scholar is included among the top collaborators of M. Bawedin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Bawedin. M. Bawedin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lacord, J., Jean‐Michel Hartmann, P. Besson, et al.. (2022). Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications. Solid-State Electronics. 193. 108294–108294. 1 indexed citations

Ghibaudo, G., et al.. (2021). Origin of the Out-of-Equilibrium Body Potential In Silicon on Insulator Devices With Metal Contacts. IEEE Electron Device Letters. 42(12). 1834–1837. 1 indexed citations

Bawedin, M., et al.. (2019). Compact MOS Structure & Design for Ion–Ioff Thermal control in 28nm UTBB FD-SOI CMOS technology. SPIRE - Sciences Po Institutional REpository. 1. 1–4. 1 indexed citations

Bawedin, M., et al.. (2019). In-situ thermal assist recovery thanks to active silicide source on NMOS transistor in FD-SOI technology. SPIRE - Sciences Po Institutional REpository. 7. 1–4. 4 indexed citations

Bawedin, M., et al.. (2019). Doping profile extraction in thin SOI films: Application to A2RAM. Solid-State Electronics. 159. 3–11. 5 indexed citations

Martin, M., J. Moeyaert, Reynald Alcotte, et al.. (2019). InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET. Journal of Crystal Growth. 510. 18–22. 3 indexed citations

Bawedin, M., et al.. (2019). A2RAM compact modeling: From DC to 1T-DRAM memory operation. Solid-State Electronics. 168. 107731–107731. 2 indexed citations

Bawedin, M., et al.. (2019). Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology. 1–4. 3 indexed citations

Navarro, Santiago, Carlos Márquez, Carlos Navarro, et al.. (2019). Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells. Solid-State Electronics. 159. 12–18. 4 indexed citations

10.

Galy, Philippe, et al.. (2019). In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology. Solid-State Electronics. 168. 107737–107737. 3 indexed citations

11.

Bawedin, M., et al.. (2018). Optimized in situ heating control on a new MOS device structure in 28nm UTBB FD-SOI CMOS technology. 157–160. 3 indexed citations

12.

Cristoloveanu, S., et al.. (2016). Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET. IEEE Electron Device Letters. 38(2). 157–159. 20 indexed citations

13.

Liu, Fanyu, I. Ionica, M. Bawedin, & S. Cristoloveanu. (2015). Parasitic bipolar effect in ultra-thin FD SOI MOSFETs. Solid-State Electronics. 112. 29–36. 6 indexed citations

14.

Umana‐Membreno, Gilberto A., Sung‐Jae Chang, M. Bawedin, et al.. (2015). High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs. Solid-State Electronics. 113. 109–115. 5 indexed citations

15.

Cristoloveanu, S., M. Bawedin, Jing Wan, et al.. (2012). Innovative capacitorless SOI DRAMs. 70. 1–2. 1 indexed citations

16.

Bawedin, M., et al.. (2012). Mobility models for ZnO TFTs. 1–4. 2 indexed citations

17.

Mart́ınez, F., M. Bawedin, M. Valenza, et al.. (2011). New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs. Microelectronic Engineering. 88(7). 1286–1290. 1 indexed citations

18.

Bawedin, M., S. Cristoloveanu, Vincent Dessard, & Denis Flandre. (2007). Experiments and Modeling of Dynamic Floating Body Effects in 1T-Dram Fully Depleted SOI Devices. 37. 84–88. 2 indexed citations

19.

Bawedin, M., S. Cristoloveanu, & Denis Flandre. (2006). Novel Capacitor-Less 1T-DRAM Using MSD Effect. 47. 109–110. 8 indexed citations

20.

Bawedin, M., S. Cristoloveanu, & Denis Flandre. (2005). Unusual floating body effect in fully depleted MOSFETs. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 30. 151–152. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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