D. Fraboulet

595 citations

21 papers · 422 indexed · h-index 10

Impact in

Nuclear and High Energy Physics top 10%
- Magnetic confinement fusion research
Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices

Papers in

Nuclear and High Energy Physics 7
- Magnetic confinement fusion research 7
Electrical and Electronic Engineering 16
- Semiconductor materials and devices 10
- Advancements in Semiconductor Devices and Circuit Design 9
- Plasma Diagnostics and Applications 3

Co-authors: S. Deleonibus D. Mariolle A. Zaslavsky S. Cristoloveanu Serge Luryi A. Bécoulet B. Saoutic Ulrich Fahl
Journals: Physics of Plasmas (4 papers)Applied Physics Letters (3 papers)Solid-State Electronics (2 papers)Energy Strategy Reviews (1 paper)Microelectronic Engineering (1 paper)
Partner nations: France United States Switzerland

In The Last Decade

D. Fraboulet

20 papers receiving 398 citations

Peers

Countries citing papers authored by D. Fraboulet

Since Specialization

Citations

This map shows the geographic impact of D. Fraboulet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Fraboulet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Fraboulet more than expected).

Fields of papers citing papers by D. Fraboulet

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Fraboulet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Fraboulet. The network helps show where D. Fraboulet may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Fraboulet, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Fraboulet Line = papers co-authored together D. Fraboulet links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Perspectives on decarbonizing the transport sector in the EU-28 Energy Strategy Reviews ·D. Mark Courtney, Jonatan J. Gómez Vilchez, Bahadirova Gulnaz Bekualykyzy, Paul Deane, D. Fraboulet, Ulrich Fahl, Eamonn Mulholland	2018	60
2	Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM Solid-State Electronics ·E. Gerritsen, Plesníková Paulína, C. Caillat, Riza Rusyiana, Ce Guo, D. Fraboulet, Maya Efstathiou, A. Berthelot, S. E. Smith, P. Mazoyer	2005	79
3	Size scaling of the addition spectra in silicon quantum dots Physical Review B ·Mohammad-Amin Senobari, M. Hofheinz, X. Jehl, M. Sanquer, M. Vinet, B. Prévitali, D. Fraboulet, D. Mariolle, S. Deleonibus	2005	11
4	Double Gate Coupling and Quantum Tunneling in Ultrathin SOI MOSFETs John Bradford Senden, A. Zaslavsky, Akiko Ohata, J. Pretet, S. Cristoloveanu, Serge Luryi, D. Mariolle, D. Fraboulet, S. Deleonibus	2004	1
5	Lateral interband tunneling transistor in silicon-on-insulator Applied Physics Letters ·John Bradford Senden, A. Zaslavsky, Serge Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, S. Deleonibus	2004	112
6	Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory Solid-State Electronics ·Damien Deleruyelle, J. Cluzel, B. De Salvo, D. Fraboulet, D. Mariolle, N. Buffet, S. Deleonibus	2003	1
7	Ultrathin silicon-on-insulator vertical tunneling transistor Applied Physics Letters ·A. Zaslavsky, John Bradford Senden, Serge Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, S. Deleonibus	2003	24
8	Silicon single electron transistors with SOI and MOSFET structures: the role of access resistances IEEE Transactions on Nanotechnology ·X. Jehl, M. Sanquer, G. Bertrand, G. Guégan, S. Deleonibus, D. Fraboulet	2003	17
9	Current-induced structural modification of silicon-on-insulator nanocircuits Applied Physics Letters ·N. Clément, Francisco Javier Schnaas Arrieta, D. Tonneau, Sarah E. Gibson, 홍기석, H. Dallaporta, V. I. Safarov, D. Fraboulet, J. Gautier	2003	12
10	Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory TechConnect Briefs ·D. Fraboulet, G. Le Carval, C. Le Royer, M. Sanquer	2002	1
11	Coulomb Blockade in Thin SOI Nanodevices SPIRE - Sciences Po Institutional REpository ·D. Fraboulet, X. Jehl, D. Mariolle, C. Le Royer, G. Le Carval, P. Scheiblin, P. Rivallin, L. Mollard, F. Béraud, Ying YOU, A. Toffoli, G. Molas, B. De Salvo, S. Deleonibus, M. Sanquer	2002	3
12	Accurate Modeling of Quantum-Dot Based Multi Tunnel Junction Memory: Optimization and Process Dispersions Analyzes for DRAM Applications C. Le Royer, G. Le Carval, D. Fraboulet, M. Sanquer	2002	3
13	Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals Microelectronics Reliability ·B. De Salvo, В. Ц. Цыдыпов, T. Baron, G. Ghibaudo, F. Martín, D. Fraboulet, G. Reimbold, J. Gautier	2000	13
14	Interaction of ICRF power and edge plasma in Tore Supra ergodic divertor configuration Journal of Nuclear Materials ·F. Nguyen, A. Grosman, Vladimir A. Basiuk, D. Fraboulet, B. Beaumont, A. Bécoulet, Ph. Ghendrih, Jovan Durán A., Zhiqiang Li	2000	7
15	Fabrication of Single Electron Devices by hybrid (E-beam/DUV) lithography Microelectronic Engineering ·N Sruthi, S. Tedesco, Braden RL Rivers, F. Martín, D. Fraboulet, B. Dal’zotto, Ying YOU, P. Mur, T. Charvolin, D. Mariolle, F. Tardif	2000	2
16	One-dimensional full wave treatment of mode conversion process at the ion–ion hybrid resonance in a bounded tokamak plasma Physics of Plasmas ·I. Monakhov, A. Bécoulet, D. Fraboulet, F. Nguyen	1999	7
17	One-dimensional full-wave description of plasma emission and absorption in the ion cyclotron range of frequency in tokamaks Physics of Plasmas ·D. Fraboulet, A. Bécoulet, F. Nguyen	1999	2
18	Mode Conversion Heating Experiments on the Tore Supra Tokamak Physical Review Letters ·B. Saoutic, A. Bécoulet, T. Hutter, D. Fraboulet, A. K. Ram, A. Bers	1996	16
19	TORE SUPRA fast reciprocating radio frequency probea) Review of Scientific Instruments ·C. E. Thomas, J. H. Harris, Yusuf Dwipurna Nugraha, M. Kwon, R. H. Goulding, D. J. Hoffman, B. Saoutic, A. Bécoulet, D. Fraboulet, B. Beaumont, 則幸宮本, Jovan Durán A., E. T. Massuda	1995	0
20	Hamiltonian analysis of fast wave current drive in tokamak plasmas Physics of Plasmas ·A. Bécoulet, D. Fraboulet, G. Giruzzi, D. Moreau, B. Saoutic, Tô Đình Phúc	1994	45

About D. Fraboulet

D. Fraboulet is a scholar working on Nuclear and High Energy Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Astronomy and Astrophysics and Ceramics and Composites, having authored 21 papers that have together received 422 indexed citations. Recurring topics across this work include Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Magnetic confinement fusion research (7 papers), Quantum and electron transport phenomena (6 papers), Particle accelerators and beam dynamics (4 papers), Plasma Diagnostics and Applications (3 papers), Ionosphere and magnetosphere dynamics (3 papers) and Surface and Thin Film Phenomena (3 papers). The work is most often cited by research in Nuclear and High Energy Physics (83 citations), Electrical and Electronic Engineering (313 citations), Astronomy and Astrophysics (55 citations), Atomic and Molecular Physics, and Optics (66 citations) and Automotive Engineering (25 citations). D. Fraboulet has collaborated with scholars based in France, United States and Switzerland. Frequent co-authors include S. Deleonibus, D. Mariolle, A. Zaslavsky, S. Cristoloveanu, Serge Luryi, A. Bécoulet, B. Saoutic, Ulrich Fahl, Paul Deane and Jonatan J. Gómez Vilchez. Their work appears in journals such as Physics of Plasmas, Applied Physics Letters, Solid-State Electronics, Energy Strategy Reviews and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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