Arnab Biswas

495 total citations
20 papers, 398 citations indexed

About

Arnab Biswas is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Arnab Biswas has authored 20 papers receiving a total of 398 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 1 paper in Electronic, Optical and Magnetic Materials. Recurrent topics in Arnab Biswas's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Arnab Biswas is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Arnab Biswas collaborates with scholars based in Switzerland, France and Germany. Arnab Biswas's co-authors include Adrian M. Ionescu, Wladek Grabinski, C. Le Royer, Surya Shankar Dan, Ali Saeidi, Adrian Ionescu, Luca De Michielis, Cem Alper, Gia Vinh Luong and S. Mantl and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Arnab Biswas

18 papers receiving 386 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Arnab Biswas 387 56 30 27 14 20 398
Gia Vinh Luong 489 1.3× 115 2.1× 53 1.8× 26 1.0× 12 0.9× 26 504
Xinlv Duan 239 0.6× 29 0.5× 77 2.6× 17 0.6× 9 0.6× 27 247
Chengkuan Wang 309 0.8× 52 0.9× 125 4.2× 27 1.0× 16 1.1× 16 320
Min-Feng Hung 353 0.9× 69 1.2× 66 2.2× 23 0.9× 4 0.3× 33 364
Ching-Sung Ho 268 0.7× 43 0.8× 33 1.1× 8 0.3× 9 0.6× 7 284
Kanghoon Jeon 473 1.2× 162 2.9× 55 1.8× 16 0.6× 6 0.4× 13 487
H. C. Slade 325 0.8× 30 0.5× 109 3.6× 31 1.1× 12 0.9× 15 332
Cem Alper 453 1.2× 112 2.0× 38 1.3× 28 1.0× 13 0.9× 33 469
Kaushik Nayak 430 1.1× 81 1.4× 63 2.1× 6 0.2× 11 0.8× 29 448

Countries citing papers authored by Arnab Biswas

Since Specialization
Citations

This map shows the geographic impact of Arnab Biswas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Arnab Biswas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Arnab Biswas more than expected).

Fields of papers citing papers by Arnab Biswas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Arnab Biswas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Arnab Biswas. The network helps show where Arnab Biswas may publish in the future.

Co-authorship network of co-authors of Arnab Biswas

This figure shows the co-authorship network connecting the top 25 collaborators of Arnab Biswas. A scholar is included among the top collaborators of Arnab Biswas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Arnab Biswas. Arnab Biswas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Biswas, Arnab, et al.. (2025). p-(001)NiO/n-(0001)ZnO heterojunction based ultraviolet photodetectors with controllable response time. Semiconductor Science and Technology. 40(4). 45011–45011. 2 indexed citations
2.
3.
Biswas, Arnab, Gia Vinh Luong, M.F. Chowdhury, et al.. (2017). Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions. IEEE Transactions on Electron Devices. 64(4). 1441–1448. 11 indexed citations
4.
Vitale, Wolfgang A., Arnab Biswas, Cem Alper, et al.. (2017). A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor. Scientific Reports. 7(1). 355–355. 51 indexed citations
5.
Vitale, Wolfgang A., Arnab Biswas, Cem Alper, et al.. (2016). Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 19.3.1–19.3.4. 19 indexed citations
6.
Saeidi, Ali, Arnab Biswas, & Adrian Ionescu. (2016). Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric. Solid-State Electronics. 124. 16–23. 55 indexed citations
7.
Biswas, Arnab & Adrian M. Ionescu. (2015). A capacitance-voltage model for DG-TFET. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 1–2. 3 indexed citations
8.
Biswas, Arnab, Luca De Michielis, Antonios Bazigos, & Adrian M. Ionescu. (2015). Compact modeling of DG-Tunnel FET for Verilog-A implementation. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 40–43. 8 indexed citations
9.
Biswas, Arnab & Adrian M. Ionescu. (2014). Study of fin-tunnel FETs with doped pocket as capacitor-less 1T DRAM. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 1–2. 9 indexed citations
10.
Biswas, Arnab, Luca De Michielis, Cem Alper, & Adrian M. Ionescu. (2014). Conformal mapping based DC current model for double gate tunnel FETs. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 1. 85–88. 6 indexed citations
11.
Biswas, Arnab, Wladek Grabinski, Antonios Bazigos, et al.. (2014). Investigation of tunnel field-effect transistors as a capacitor-less memory cell. Applied Physics Letters. 104(9). 36 indexed citations
12.
Biswas, Arnab, Cem Alper, Luca De Michielis, et al.. (2014). Compact modeling of homojunction tunnel FETs. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 54–57.
13.
Biswas, Arnab & Adrian M. Ionescu. (2014). 1T Capacitor-Less DRAM Cell Based on Asymmetric Tunnel FET Design. IEEE Journal of the Electron Devices Society. 3(3). 217–222. 32 indexed citations
14.
Michielis, Luca De, Arnab Biswas, Livio Lattanzio, et al.. (2013). An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices. Applied Physics Letters. 103(12). 15 indexed citations
15.
Biswas, Arnab, Surya Shankar Dan, C. Le Royer, Wladek Grabinski, & Adrian M. Ionescu. (2012). TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model. Microelectronic Engineering. 98. 334–337. 114 indexed citations
16.
Biswas, Arnab, Cem Alper, Luca De Michielis, & Adrian M. Ionescu. (2012). New tunnel-FET architecture with enhanced I<inf>ON</inf> and improved Miller Effect for energy efficient switching. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 131–132. 8 indexed citations
17.
Dan, Surya Shankar, Arnab Biswas, C. Le Royer, Wladek Grabinski, & Adrian M. Ionescu. (2011). A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction. IEEE Electron Device Letters. 33(2). 140–142. 11 indexed citations
18.
Lattanzio, Livio, Arnab Biswas, Luca De Michielis, & Adrian M. Ionescu. (2011). Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms. Solid-State Electronics. 65-66. 234–239. 9 indexed citations
19.
Lattanzio, Livio, Arnab Biswas, Luca De Michielis, & Adrian M. Ionescu. (2011). A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms. Applied Physics Letters. 98(12). 8 indexed citations
20.
Lattanzio, Livio, Luca De Michielis, Arnab Biswas, & Adrian M. Ionescu. (2010). Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 353–356. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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