Jing Wan

2.9k citations

146 papers · 1.9k indexed · h-index 24

Impact in

Electrical and Electronic Engineering top 2%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry top 10%
- 2D Materials and Applications
- MXene and MAX Phase Materials

Papers in ⓘ

Electrical and Electronic Engineering 113
- Advancements in Semiconductor Devices and Circuit Design 61
- Semiconductor materials and devices 51
- Ferroelectric and Negative Capacitance Devices 18
- Advanced Memory and Neural Computing 17
- Integrated Circuits and Semiconductor Failure Analysis 13
- Thin-Film Transistor Technologies 11
Instrumentation 5

Co-authors: S. Cristoloveanu (37 shared papers)A. Zaslavsky (26 shared papers)C. Le Royer (17 shared papers)Wenzhong Bao (21 shared papers)Peng Zhou (19 shared papers)Xin-Ping Qu (16 shared papers)Bing-Rui Lu (20 shared papers)Jianan Deng (16 shared papers)
Journals: IEEE Transactions on Electron Devices (14 papers)Microelectronic Engineering (14 papers)IEEE Electron Device Letters (13 papers)Solid-State Electronics (11 papers)IEEE Journal of the Electron Devices Society (5 papers)
Partner nations: China France United States

In The Last Decade

Jing Wan

122 papers receiving 1.8k citations

Peers

Countries citing papers authored by Jing Wan

Since Specialization

Citations

This map shows the geographic impact of Jing Wan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jing Wan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jing Wan more than expected).

Fields of papers citing papers by Jing Wan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jing Wan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jing Wan. The network helps show where Jing Wan may publish in the future.

Co-authors

The 25 scholars most cited alongside Jing Wan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jing Wan Line = papers co-authored together Jing Wan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 146 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A Review of Sharp-Switching Devices for Ultra-Low Power Applications IEEE Journal of the Electron Devices Society ·S. Cristoloveanu, Jing Wan, A. Zaslavsky	2016	105
2	Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling Solid-State Electronics ·Jing Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu	2011	96
3	An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations Nature Communications ·Yin Wang, Hongwei Tang, Yufeng Xie, Xinyu Chen, Shunli Ma, Zhengzong Sun, Qingqing Sun, Lin Chen, Hao Zhu, Jing Wan, Zihan Xu, David Wei Zhang, Peng Zhou, Wenzhong Bao	2021	79
4	A tunneling field effect transistor model combining interband tunneling with channel transport Journal of Applied Physics ·Jing Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu	2011	79
5	A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration IEEE Electron Device Letters ·Jing Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu	2011	74
6	A Dual‐Gate MoS₂ Photodetector Based on Interface Coupling Effect Small ·Fuyou Liao, Jianan Deng, Xinyu Chen, Yin Wang, Xinzhi Zhang, Jian Liu, Hao Zhu, Lin Chen, Qingqing Sun, Weida Hu, Jianlu Wang, Jing Zhou, Peng Zhou, David Wei Zhang, Jing Wan, Wenzhong Bao	2019	72
7	Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide Nature Electronics ·Ling Tong, Jing Wan, Kai Xiao, Jian Liu, Jingyi Ma, Xiaojiao Guo, Lihui Zhou, Xinyu Chen, Yin Xia, Sheng Dai, Zihan Xu, Wenzhong Bao, Peng Zhou	2022	63
8	The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method Applied Physics A ·Shuyi Liu, Chen Tao, Jing Wan, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu	2008	57
9	A 619-pixel machine vision enhancement chip based on two-dimensional semiconductors Science Advances ·Shunli Ma, Tianxiang Wu, Xinyu Chen, Yin Wang, Jingyi Ma, Honglei Chen, Antoine Riaud, Jing Wan, Zihan Xu, Lin Chen, Junyan Ren, David Wei Zhang, Peng Zhou, Yang Chai, Wenzhong Bao	2022	55
10	A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection Solid-State Electronics ·Jing Wan, S. Cristoloveanu, C. Le Royer, A. Zaslavsky	2012	53
11	A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications Solid-State Electronics ·Jing Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu	2013	47
12	Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage Solid-State Electronics ·Jing Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu	2013	45
13	An artificial neural network chip based on two-dimensional semiconductor Science Bulletin ·Shunli Ma, Tianxiang Wu, Xinyu Chen, Yin Wang, Hongwei Tang, Yuting Yao, Yan Wang, Ziyang Zhu, Jianan Deng, Jing Wan, Ye Lü, Zhengzong Sun, Zihan Xu, Antoine Riaud, Chenjian Wu, David Wei Zhang, Yang Chai, Peng Zhou, Junyan Ren, Wenzhong Bao	2021	41
14	Homogeneous 2D MoTe₂ CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping Small ·Jing Chen, Junqiang Zhu, Qiyuan Wang, Jing Wan, Ran Liu	2020	37
15	Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs IEEE Transactions on Electron Devices ·Qihang Yang, Guodong Qi, Weizhuo Gan, Zhenhua Wu, Huaxiang Yin, Tao Chen, Guangxi Hu, Jing Wan, Shaofeng Yu, Ye Lü	2021	36
16	High-Performance Logic and Memory Devices Based on a Dual-Gated MoS₂ Architecture ACS Applied Electronic Materials ·Fuyou Liao, Zhongxun Guo, Yin Wang, Yufeng Xie, Simeng Zhang, Yaochen Sheng, Hongwei Tang, Zihan Xu, Antoine Riaud, Peng Zhou, Jing Wan, Michael S. Fuhrer, Xiangwei Jiang, David Wei Zhang, Yang Chai, Wenzhong Bao	2019	30
17	Adaptive directed support vector machine method for the reliability evaluation of aeroengine structure Reliability Engineering & System Safety ·Chen Li, Jiongran Wen, Jing Wan, Osman Taylan, Cheng‐Wei Fei	2024	30
18	Two‐Dimensional Semiconductors: From Device Processing to Circuit Integration Advanced Functional Materials ·Chuming Sheng, Xiangqi Dong, Yuxuan Zhu, Xinyu Wang, Xinyu Chen, Yin Xia, Zihan Xu, Peng Zhou, Jing Wan, Wenzhong Bao	2023	29
19	MoS2 dual-gate transistors with electrostatically doped contacts Nano Research ·Fuyou Liao, Yaocheng Sheng, Zhongxun Guo, Hongwei Tang, Yin Wang, Lingyi Zong, Xinyu Chen, Antoine Riaud, Jiahe Zhu, Yufeng Xie, Lin Chen, Hao Zhu, Qingqing Sun, Peng Zhou, Xiangwei Jiang, Jing Wan, Wenzhong Bao, David Wei Zhang	2019	29
20	Low-frequency noise behavior of tunneling field effect transistors Applied Physics Letters ·Jing Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu	2010	29

About Jing Wan

Jing Wan is a scholar working on Electrical and Electronic Engineering, Instrumentation, Biomedical Engineering, Surfaces, Coatings and Films and Bioengineering, having authored 146 papers that have together received 1.9k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (61 papers), Semiconductor materials and devices (51 papers), Nanowire Synthesis and Applications (32 papers), 2D Materials and Applications (18 papers), Ferroelectric and Negative Capacitance Devices (18 papers), Advanced Memory and Neural Computing (17 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers) and Thin-Film Transistor Technologies (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Materials Chemistry (575 citations), Biomedical Engineering (471 citations), Bioengineering (52 citations) and Instrumentation (27 citations). Jing Wan has collaborated with scholars based in China, France and United States. Frequent co-authors include S. Cristoloveanu, A. Zaslavsky, C. Le Royer, Wenzhong Bao, Peng Zhou, Xin-Ping Qu, Bing-Rui Lu, Jianan Deng, Yifang Chen and Xinyu Chen. Their work appears in journals such as IEEE Transactions on Electron Devices, Microelectronic Engineering, IEEE Electron Device Letters, Solid-State Electronics and IEEE Journal of the Electron Devices Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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