L. Vandroux

475 total citations
26 papers, 285 citations indexed

About

L. Vandroux is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. Vandroux has authored 26 papers receiving a total of 285 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in L. Vandroux's work include Semiconductor materials and devices (13 papers), 3D IC and TSV technologies (10 papers) and Electronic Packaging and Soldering Technologies (6 papers). L. Vandroux is often cited by papers focused on Semiconductor materials and devices (13 papers), 3D IC and TSV technologies (10 papers) and Electronic Packaging and Soldering Technologies (6 papers). L. Vandroux collaborates with scholars based in France, Belgium and Switzerland. L. Vandroux's co-authors include L. Clavelier, F. Rieutord, L. Di Cioccio, P. Mur, Jean‐Michel Hartmann, C. Le Royer, V. Loup, G. Molas, D. Lafond and T. Baron and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Nanotechnology.

In The Last Decade

L. Vandroux

26 papers receiving 271 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Vandroux France 11 264 98 65 38 32 26 285
J. Y. Wu Taiwan 11 311 1.2× 92 0.9× 44 0.7× 120 3.2× 44 1.4× 51 354
Xiao Sun Belgium 9 291 1.1× 59 0.6× 32 0.5× 28 0.7× 16 0.5× 36 325
Vandana Kumari India 12 490 1.9× 62 0.6× 49 0.8× 54 1.4× 68 2.1× 72 535
J. Neil Merrett United States 10 245 0.9× 79 0.8× 52 0.8× 36 0.9× 48 1.5× 29 312
R.G.R. Weemaes Netherlands 6 282 1.1× 98 1.0× 50 0.8× 75 2.0× 41 1.3× 13 312
Kaixin Chen China 10 296 1.1× 42 0.4× 121 1.9× 54 1.4× 18 0.6× 23 321
Jiantou Gao China 11 298 1.1× 81 0.8× 22 0.3× 22 0.6× 63 2.0× 34 348
M.Y. Yang Taiwan 8 311 1.2× 195 2.0× 24 0.4× 35 0.9× 48 1.5× 10 345
Kazuyoshi Nakada Japan 13 404 1.5× 315 3.2× 107 1.6× 26 0.7× 7 0.2× 44 446
Yohei Otani Japan 11 235 0.9× 204 2.1× 61 0.9× 106 2.8× 39 1.2× 38 315

Countries citing papers authored by L. Vandroux

Since Specialization
Citations

This map shows the geographic impact of L. Vandroux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Vandroux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Vandroux more than expected).

Fields of papers citing papers by L. Vandroux

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Vandroux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Vandroux. The network helps show where L. Vandroux may publish in the future.

Co-authorship network of co-authors of L. Vandroux

This figure shows the co-authorship network connecting the top 25 collaborators of L. Vandroux. A scholar is included among the top collaborators of L. Vandroux based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Vandroux. L. Vandroux is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mourier, Thierry, et al.. (2015). Electrografted Copper Seed Layer for High Aspect Ratio TSVs Interposer Metallization. ECS Transactions. 64(40). 9–22. 3 indexed citations
2.
Mourier, Thierry, Jean‐Paul Barnes, D. Rouchon, et al.. (2014). Analysis of High Aspect Ratio through Silicon via (TSV) Diffusion and Stress Impact Profile during 3D Advanced Integration. ECS Transactions. 61(3). 219–226. 1 indexed citations
3.
Moriceau, H., Frank Fournel, Anne‐Marie Charvet, et al.. (2013). Treatments of Deposited SiOx Surfaces Enabling Low Temperature Direct Bonding. ECS Transactions. 50(7). 287–295. 2 indexed citations
4.
Moriceau, H., Frank Fournel, Anne‐Marie Charvet, et al.. (2013). Treatments of Deposited SiOxSurfaces Enabling Low Temperature Direct Bonding. ECS Journal of Solid State Science and Technology. 2(9). Q147–Q150. 9 indexed citations
5.
Nemouchi, F., V. Carron, János L. Lábár, et al.. (2013). Formation of NiGe through germanium oxide on Ge(0 0 1) substrate. Microelectronic Engineering. 107. 178–183. 6 indexed citations
6.
Surana, Kavita, Jean‐Marie Lebrun, B. Doisneau, et al.. (2012). Film-thickness-dependent conduction in ordered Si quantum dot arrays. Nanotechnology. 23(10). 105401–105401. 14 indexed citations
7.
8.
Paviet‐Salomon, Bertrand, et al.. (2011). Laser doping using phosphorus-doped silicon nitrides. Energy Procedia. 8. 700–705. 17 indexed citations
9.
Paviet‐Salomon, Bertrand, et al.. (2011). Evaluation of N-Rich, P and B Containing SiNx Materials as Passivation Layer for Silicon Solar Cell. EU PVSEC. 1648–1652. 3 indexed citations
10.
Molas, G., R. Kies, M. Bocquet, et al.. (2011). Investigation of charge-trap memories with AlN based band engineered storage layers. Solid-State Electronics. 58(1). 68–74. 3 indexed citations
11.
Molas, G., R. Kies, M. Bocquet, et al.. (2010). Investigation of charge-trap memories with AlN based band engineered storage layers. 1–4. 1 indexed citations
12.
Fillot, F., A. Roule, M. Veillerot, et al.. (2010). GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion. Microelectronic Engineering. 88(5). 817–821. 16 indexed citations
13.
Vandroux, L., et al.. (2010). Low-resistance a-SiGe-based microbolometer pixel for future smart IR FPA. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7660. 76600U–76600U. 10 indexed citations
14.
Carron, V., F. Nemouchi, Y. Morand, et al.. (2009). Platinum silicide metallic source & drain process optimization for FDSOI pMOSFETs. 87. 1–2. 5 indexed citations
15.
Leduc, Patrick, M. Assous, D. Bouchu, et al.. (2008). The Effect of Process Parameters on Electrical Properties of High Density Through-Si Vias. 2 indexed citations
16.
Renault, O., L. Clavelier, C. Le Royer, et al.. (2007). 紫外線と軟X線光電子分光法で測定したHfO2/GeON/Ge積層膜のバンドオフセット. Applied Physics Letters. 90(5). 53508–53508. 1 indexed citations
17.
Batude, P., X. Garros, L. Clavelier, et al.. (2007). Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks. Journal of Applied Physics. 102(3). 38 indexed citations
18.
Martínez, E., O. Renault, L. Clavelier, et al.. (2007). Band offsets of HfO2∕GeON∕Ge stacks measured by ultraviolet and soft x-ray photoelectron spectroscopies. Applied Physics Letters. 90(5). 18 indexed citations
19.
Allain, F., O. Faynot, M. Cassé, et al.. (2007). Additivity between sSOI- and CESL-induced nMOSFETs Performance Boosts. 2 indexed citations
20.
Batude, P., X. Garros, L. Clavelier, et al.. (2007). In-depth investigation of the mechanisms impacting C-V/G-V characteristics of Ge/GeON/HfO2/TiN stacks by electrical modeling. Microelectronic Engineering. 84(9-10). 2320–2323. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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