F. Gámiz

5.6k total citations
300 papers, 4.1k citations indexed

About

F. Gámiz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F. Gámiz has authored 300 papers receiving a total of 4.1k indexed citations (citations by other indexed papers that have themselves been cited), including 290 papers in Electrical and Electronic Engineering, 50 papers in Atomic and Molecular Physics, and Optics and 31 papers in Materials Chemistry. Recurrent topics in F. Gámiz's work include Semiconductor materials and devices (264 papers), Advancements in Semiconductor Devices and Circuit Design (262 papers) and Silicon Carbide Semiconductor Technologies (82 papers). F. Gámiz is often cited by papers focused on Semiconductor materials and devices (264 papers), Advancements in Semiconductor Devices and Circuit Design (262 papers) and Silicon Carbide Semiconductor Technologies (82 papers). F. Gámiz collaborates with scholars based in Spain, France and Switzerland. F. Gámiz's co-authors include J.B. Roldán, J. A. López‐Villanueva, A. Godoy, P. Cartujo, Massimo V. Fischetti, J. E. Carceller, Noel Rodríguez, Luca Donetti, F. Jiménez-Molinos and C. Sampedro and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Industrial Electronics.

In The Last Decade

F. Gámiz

287 papers receiving 3.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Gámiz Spain 34 3.6k 625 502 405 111 300 4.1k
Cheng Li China 22 1.0k 0.3× 697 1.1× 390 0.8× 453 1.1× 36 0.3× 119 1.6k
Harold M. H. Chong United Kingdom 23 1.7k 0.5× 542 0.9× 1.3k 2.5× 387 1.0× 27 0.2× 162 2.2k
D.L. Polla United States 27 1.3k 0.3× 819 1.3× 493 1.0× 782 1.9× 45 0.4× 104 2.1k
Seung S. Lee South Korea 22 1.2k 0.3× 1.6k 2.6× 467 0.9× 282 0.7× 300 2.7× 68 2.6k
Song Wang China 21 1.2k 0.3× 149 0.2× 424 0.8× 230 0.6× 40 0.4× 71 1.4k
Shuailong Zhang China 27 1.3k 0.4× 1.1k 1.7× 424 0.8× 286 0.7× 33 0.3× 114 2.4k
Bo Fu China 21 1.0k 0.3× 500 0.8× 931 1.9× 474 1.2× 52 0.5× 93 1.8k
Wei Jiang China 24 1.2k 0.3× 469 0.8× 928 1.8× 145 0.4× 38 0.3× 152 1.8k
Werner Karl Schomburg Germany 24 940 0.3× 1.9k 3.0× 188 0.4× 134 0.3× 51 0.5× 104 2.5k
Ian G. Foulds Canada 23 837 0.2× 1.1k 1.8× 188 0.4× 220 0.5× 61 0.5× 99 1.6k

Countries citing papers authored by F. Gámiz

Since Specialization
Citations

This map shows the geographic impact of F. Gámiz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Gámiz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Gámiz more than expected).

Fields of papers citing papers by F. Gámiz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Gámiz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Gámiz. The network helps show where F. Gámiz may publish in the future.

Co-authorship network of co-authors of F. Gámiz

This figure shows the co-authorship network connecting the top 25 collaborators of F. Gámiz. A scholar is included among the top collaborators of F. Gámiz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Gámiz. F. Gámiz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Márquez, Carlos, Farzan Gity, Alberto Martínez‐Cuezva, et al.. (2025). On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices. Advanced Electronic Materials. 11(13).
2.
Donetti, Luca, Cristina Medina-Bailón, J. L. Padilla, C. Sampedro, & F. Gámiz. (2025). On the Capacitance of Nanosheet Transistors. IEEE Transactions on Electron Devices. 72(6). 2827–2833.
3.
Martínez‐Cuezva, Alberto, Carlos Márquez, Manuel Caño‐García, et al.. (2025). Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS2 Devices Enabled by Plasma-Enhanced Atomic Layer Deposition. ACS Applied Materials & Interfaces. 17(37). 52902–52912. 1 indexed citations
4.
5.
6.
Márquez, Carlos, et al.. (2023). Simulation of BioGFET sensors using TCAD. Solid-State Electronics. 208. 108761–108761. 3 indexed citations
7.
Medina-Bailón, Cristina, J. L. Padilla, C. Sampedro, et al.. (2021). Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator. Micromachines. 12(6). 601–601.
8.
Márquez, Carlos, Norberto Salazar, Farzan Gity, et al.. (2021). Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives. Micromachines. 12(6). 646–646. 4 indexed citations
9.
Navarro, Carlos, F. Gámiz, Philippe Galy, et al.. (2021). Improved Retention Characteristics of Z 2 -FET Employing Half Back-Gate Control. IEEE Transactions on Electron Devices. 68(3). 1041–1044. 4 indexed citations
10.
Navarro, Carlos, et al.. (2021). Memory Operation of Z²-FET Without Selector at High Temperature. IEEE Journal of the Electron Devices Society. 9. 658–662. 3 indexed citations
11.
Márquez, Carlos, Norberto Salazar, Farzan Gity, et al.. (2020). Investigating the transient response of Schottky barrier back-gated MoS 2 transistors. 2D Materials. 7(2). 25040–25040. 17 indexed citations
12.
Medina-Bailón, Cristina, Hamilton Carrillo-Nuñez, Jaehyun Lee, et al.. (2020). Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation. Micromachines. 11(2). 204–204. 4 indexed citations
13.
Navarro, Carlos, Philippe Galy, S. Cristoloveanu, et al.. (2020). Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors. IEEE Electron Device Letters. 41(3). 361–364. 4 indexed citations
14.
Navarro, Carlos, F. Gámiz, S. Cristoloveanu, et al.. (2019). Characteristics of band modulation FET on sub 10 nm SOI. Japanese Journal of Applied Physics. 58(SB). SBBB07–SBBB07. 3 indexed citations
15.
Medina-Bailón, Cristina, J. L. Padilla, Toufik Sadi, et al.. (2019). Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices. IEEE Transactions on Electron Devices. 66(3). 1145–1152. 6 indexed citations
16.
Medina-Bailón, Cristina, J. L. Padilla, C. Sampedro, et al.. (2018). Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo. IEEE Transactions on Electron Devices. 65(11). 4740–4746. 9 indexed citations
17.
Padilla, J. L., Cristina Medina-Bailón, Carlos Márquez, et al.. (2018). Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron–Hole Bilayer Tunneling Field-Effect Transistor. IEEE Transactions on Electron Devices. 65(10). 4679–4686. 9 indexed citations
18.
Navarro, Carlos, Santiago Navarro, Carlos Márquez, et al.. (2018). InGaAs Capacitor-Less DRAM Cells TCAD Demonstration. IEEE Journal of the Electron Devices Society. 6. 884–892. 10 indexed citations
19.
Tienda-Luna, I. M., Francisco G. Ruiz, A. Godoy, & F. Gámiz. (2009). The influence of orientation and strain on the transport properties of SOI trigate nMOSFETs. 319–322. 1 indexed citations
20.
López‐Villanueva, J. A., et al.. (1997). Study of the effects of a stepped doping profile in short-channel MOSFETs. IEEE Transactions on Electron Devices. 44(9). 1425–1431. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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