Alain Moussa

1.6k total citations
112 papers, 1.3k citations indexed

About

Alain Moussa is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, Alain Moussa has authored 112 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 94 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 19 papers in Surfaces, Coatings and Films. Recurrent topics in Alain Moussa's work include Semiconductor materials and devices (47 papers), Integrated Circuits and Semiconductor Failure Analysis (31 papers) and Advancements in Photolithography Techniques (19 papers). Alain Moussa is often cited by papers focused on Semiconductor materials and devices (47 papers), Integrated Circuits and Semiconductor Failure Analysis (31 papers) and Advancements in Photolithography Techniques (19 papers). Alain Moussa collaborates with scholars based in Belgium, Netherlands and Germany. Alain Moussa's co-authors include Alain M. Jonas, André Laschewsky, Karine Glinel, Wilfried Vandervorst, H. Bender, Alexis Franquet, Roger Loo, Matty Caymax, Sven Van Elshocht and Jean‐Louis Habib‐Jiwan and has published in prestigious journals such as Advanced Materials, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

Alain Moussa

101 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Alain Moussa Belgium 21 958 386 343 268 242 112 1.3k
T. Sakamoto Japan 26 1.2k 1.3× 646 1.7× 479 1.4× 173 0.6× 351 1.5× 53 2.0k
Olga E. Shmakova United States 14 552 0.6× 203 0.5× 313 0.9× 206 0.8× 208 0.9× 15 850
Nolan Tillman France 9 675 0.7× 385 1.0× 284 0.8× 205 0.8× 220 0.9× 11 991
Fabrizio Evangelista Italy 16 517 0.5× 298 0.8× 428 1.2× 337 1.3× 112 0.5× 20 905
Darı́o L. Goldfarb United States 20 732 0.8× 84 0.2× 225 0.7× 440 1.6× 299 1.2× 82 1.1k
Koji Abe Japan 13 421 0.4× 137 0.4× 367 1.1× 167 0.6× 126 0.5× 46 822
Tai‐Hee Kang South Korea 17 562 0.6× 240 0.6× 455 1.3× 209 0.8× 133 0.5× 53 931
Tami L. Lasseter United States 6 528 0.6× 282 0.7× 869 2.5× 350 1.3× 78 0.3× 9 1.3k
Asif Bashir Germany 23 829 0.9× 200 0.5× 1.1k 3.3× 305 1.1× 64 0.3× 55 1.6k
Bernd Frühberger United States 23 740 0.8× 314 0.8× 809 2.4× 373 1.4× 52 0.2× 38 1.5k

Countries citing papers authored by Alain Moussa

Since Specialization
Citations

This map shows the geographic impact of Alain Moussa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alain Moussa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alain Moussa more than expected).

Fields of papers citing papers by Alain Moussa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alain Moussa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alain Moussa. The network helps show where Alain Moussa may publish in the future.

Co-authorship network of co-authors of Alain Moussa

This figure shows the co-authorship network connecting the top 25 collaborators of Alain Moussa. A scholar is included among the top collaborators of Alain Moussa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Alain Moussa. Alain Moussa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Moussa, Alain, et al.. (2025). Atomic force microscopy: from research lab to high-volume manufacturing. 29–29. 1 indexed citations
2.
Chew, Soon Aik, et al.. (2024). Cu pad surface height evaluation technique by in-line SEM for wafer hybrid bonding. 55–55. 4 indexed citations
3.
Moussa, Alain, et al.. (2024). Advanced characterization of 2D materials using SEM image processing and machine learning. 31–31. 3 indexed citations
4.
Lorusso, Gian F., Dieter Van den Heuvel, Alain Moussa, et al.. (2023). Dry resist metrology readiness for high-NA EUVL. 35–35.
5.
Moussa, Alain, et al.. (2023). Alignment and overlay through opaque metal layers. 15–15.
6.
Fischer, Daniel, Gian F. Lorusso, Danilo De Simone, et al.. (2022). Low-voltage aberration-corrected SEM metrology of thin resist for high-NA EUVL. Lirias (KU Leuven). 3–3. 2 indexed citations
7.
8.
Bogdanowicz, Janusz, Stefanie Sergeant, Andreas Schulze, et al.. (2017). Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe. physica status solidi (a). 215(6). 7 indexed citations
9.
Popovici, M., Benjamin Groven, Kristof Marcoen, et al.. (2017). Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties. Chemistry of Materials. 29(11). 4654–4666. 45 indexed citations
10.
Jiang, Shidong, Clément Merckling, Alain Moussa, et al.. (2015). Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. ECS Journal of Solid State Science and Technology. 4(7). N83–N87. 3 indexed citations
11.
Moussa, Alain, et al.. (2015). Surface characterization of InP trenches embedded in oxide using scanning probe microscopy. Journal of Applied Physics. 118(22). 2 indexed citations
12.
Vos, Rita, Sophia Arnauts, Thierry Conard, et al.. (2012). Wet Chemical Cleaning of InP and InGaAs. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 187. 27–31. 10 indexed citations
13.
Hantschel, Thomas, Andreas Schulze, Umberto Celano, et al.. (2012). TiN scanning probes for electrical profiling of nanoelectronics device structures. Microelectronic Engineering. 97. 255–258. 3 indexed citations
14.
Vincent, Benjamin, Federica Gencarelli, Laura Nyns, et al.. (2011). Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments. ECS Transactions. 41(7). 239–248. 9 indexed citations
15.
Bogdanowicz, Janusz, Trudo Clarysse, Alain Moussa, et al.. (2011). Non-Destructive Characterization of Activated Ion-Implanted Doping Profiles Based on Photomodulated Optical Reflectance. AIP conference proceedings. 220–224. 1 indexed citations
16.
Souriau, Laurent, V. Terzieva, Francesca Clemente, et al.. (2008). High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge. Thin Solid Films. 517(1). 23–26. 23 indexed citations
17.
Clarysse, Trudo, Alain Moussa, Frederik Leys, et al.. (2006). Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles. MRS Proceedings. 912. 26 indexed citations
18.
Elshocht, Sven Van, P. Lehnen, A. Abrutis, et al.. (2006). Metallorganic Chemical Vapor Deposition of Dysprosium Scandate High-k Layers Using mmp-Type Precursors. Journal of The Electrochemical Society. 153(9). F219–F219. 18 indexed citations
19.
Uji‐i, Hiroshi, Alain Moussa, Wendy Verheijen, et al.. (2005). Direct Measurement of the End‐to‐End Distance of Individual Polyfluorene Polymer Chains. ChemPhysChem. 6(11). 2286–2294. 40 indexed citations
20.
Moussa, Alain & F. El‐Taib Heakal. (1980). Medium effects on the electroreduction of In(III) at DME. Journal of Electroanalytical Chemistry. 115(2). 247–251. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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