J. Dunn

935 citations

36 papers · 472 indexed · h-index 13

Electrical and Electronic Engineering top 10%
- Radio Frequency Integrated Circuit Design 21
- Advancements in Semiconductor Devices and Circuit Design 20
- Semiconductor materials and devices 15
- Electrostatic Discharge in Electronics 7
- 3D IC and TSV technologies 6
- Integrated Circuits and Semiconductor Failure Analysis 5
- Microwave Engineering and Waveguides 4
- Silicon Carbide Semiconductor Technologies 4
Hardware and Architecture
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Biomedical Engineering

Co-authors: Alvin Joseph D.L. Harame L. Lanzerotti N. Feilchenfeld Steven H. Voldman Randy Wolf Michael S. Gordon B. Jagannathan
Cited by: Electrical and Electronic Engineering Hardware and Architecture Condensed Matter Physics
Journals: IEEE Journal of Solid-State Circuits (1 paper)Proceedings of the IEEE (1 paper)Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (1 paper)
Partner nations: United States Austria Canada

In The Last Decade

J. Dunn

36 papers receiving 425 citations

Peers

Countries citing papers authored by J. Dunn

Since Specialization

Citations

This map shows the geographic impact of J. Dunn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Dunn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Dunn more than expected).

Fields of papers citing papers by J. Dunn

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Dunn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Dunn. The network helps show where J. Dunn may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Dunn, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Dunn Line = papers co-authored together J. Dunn links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A high-resistivity SiGe BiCMOS technology for WiFi RF front-end-IC solutions Alvin Joseph,Jeff Gambino,Arvid Baeckström,Eric Johnson,Hanyi Ding,Nakia Spriggs,Natalie Anna Lucy,Santosh Kumar Sharma,高布锡,Casper Båge Von Sivers,M. Zierak,Gabriela Latour,A. K. Stamper,J. Dunn	2013	12
2	Planar dual gate oxide LDMOS structures in 180nm power management technology Santosh Kumar Sharma,Regati Varsha,吴多江,Daniela Dabbene,Michael McCollough,N. Feilchenfeld,Yenny Lindawati,Yu Aikawa,M Pogonowska,J. Dunn,Estike Cholis Syah,Marcela Cunha de Léo Caetano,Rainer Minixhofer	2012	11
3	A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration Rainer Minixhofer,N. Feilchenfeld,佟少青,Ji-Seong Ryu,沈丰菊,M. Zierak,H. Enichlmair,Ketut Gde Manik Karvana,Sihui Mu,Christer Hellström,Karrie McDonough,田村智,Kiran Chatty,D Rastenyte,汪正兰,Bibi Nazma,Marius Crouzier,J. Dunn,D.L. Harame	2010	23
4	Distributed Power Amplifier with electronic harmonic filtering Bruce Thompson,Christoph Königs,А. Л. Плющев,Hew Wan Wah,陈新,Alvin Joseph,J. Dunn	2009	1
5	High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies Zhenyu He,Shkapenko Al,R. Bolam,Syed A.R. Abu Bakar,F. Chen,Xue-shi Wen,Bo Yeon Hur,N. Feilchenfeld,Afrima Yosi,Ji-Tang Lee,Kathleen Humpa,Eduarda Alessandra dos Santos Scalco,D. Coolbaugh,Maggie Engler,J. Dunn	2008	2
6	A 0.35 ¿m SiGe BiCMOS Technology for Power Amplifier Applications Alvin Joseph,Qizhi Liu,Ridha Saryani Sitorus,Peter Gray,Kenneth M. Steín,Aafke Schaap,Peter Lindgren,PAGE TOM,I. Baranskaya,K.E. Willet,Christer Hellström,Devleena Dey,Hanife Orhangazi,Kimberly A. Watson,潘浙红,J. Dunn	2007	16
7	SiGe BiCMOS Trends ¿Today and Tomorrow J. Dunn,D.L. Harame,Alvin Joseph,Maggie Engler,N. Feilchenfeld,L. Lanzerotti,Zohreh Taebi Noghondari,PAGE TOM,J. Johnson,Douglas Coolbaugh,Kathleen Humpa,Marwan Khater	2006	6
8	A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications Zohreh Taebi Noghondari,M. Dahlstrǒm,Xinshuang Lin,Kathleen Humpa,李艳云,J. M. Al-Abduljabbar,Marwan Khater,D. Ahlgren,Alvin Joseph,J. Dunn	2006	18
9	Semiconductor Technology Choices for Ultrawide-Band (UWB) Systems D.L. Harame,X. Wang,B. Jagannathan,Melia Mattos,Josef Watts,David C. Sheridan,P.E. Cottrell,D. Greenberg,G. Freeman,Afrima Yosi,E.C. Calvo,Mary Ann Scheuer,Alvin Joseph,J. Dunn	2006	2
10	A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies K. Vaed,Ji-Tang Lee,R. Bolam,Nina A. Bondarenko,D. Coolbaugh,D. Ahlgren,J. Dunn	2005	2
11	Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS Proceedings of the IEEE ·Alvin Joseph,D.L. Harame,B. Jagannathan,Douglas Coolbaugh,Zaur Musaiev,J. H. Magerlein,L. Lanzerotti,N. Feilchenfeld,Maggie Engler,J. Dunn,E. Nowak	2005	53
12	Collector optimization in advanced SiGe HBT technologies Ondřej Rychlý,Zohreh Taebi Noghondari,L. Lanzerotti,M. Dahlstrǒm,Ridha Saryani Sitorus,Michael S. Gordon,J. Johnson,田村智,Natália Araújo Veras,Chin Alan H,D. Ahlgren,Alvin Joseph,J. Dunn	2005	3
13	A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT Zohreh Taebi Noghondari,Okudaira,B.A. Rainey,Andy Stricker,Dewanggo Haryo Paramtopo,P. Gray,M. Zierak,Michael S. Gordon,D.R. Collins,Achutananda Parhi,Ridha Saryani Sitorus,Froukje de Roo,Alvin Joseph,J. Dunn,Jae-Sung Rieh,S.J. Jeng,Xuan Zhang,G. Freeman,D. Ahlgren	2003	35
14	0.13 μm 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) ·Alvin Joseph,Douglas Coolbaugh,D.L. Harame,G. Freeman,S. Subbanna,Е.В. Шабанова,J. Dunn,Arjaree Nilvongse,D. Greenberg,R. Groves,Mounir Meghelli,Alexander Rylyakov,M. Sorna,Aurea Matilde Fernández Muñiz,David A. Herman,L J Wang	2003	6
15	Integration and design issues in combining very-high-speed silicon-germanium bipolar transistors and ULSI CMOS for system-on-a-chip applications S. Subbanna,G. Freeman,D. Ahlgren,D. Greenberg,D.L. Harame,J. Dunn,David A. Herman,B.S. Meyerson,Yuriy Greshishchev,Peter Schvan,郭世凤,Kim Gi Taek,D. P. Abbot	2003	1
16	The influence of process and design of subcollectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe technology Steven H. Voldman,L. Lanzerotti,Peter Burrage,Maggie Engler,J. Dunn	2003	7
17	Midpoint conductance technology used in telecommunication stationary standby battery applications Jon Putra,Will Cluett,Ali Kardan,David Cox,J. Dunn,Chen We	2002	9
18	Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors Steven H. Voldman,Mitchell L. Meyer,Rob Johnson,F. N. Yurchikhin,Alvin Joseph,S. Furkay,Elyse Rosenbaum,J. Dunn,D.L. Harame,B.S. Meyerson	2002	19
19	Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors Steven H. Voldman,Mitchell L. Meyer,J. Schmidt,Rob Johnson,L. Lanzerotti,Alvin Joseph,Ciaran J. Brennan,J. Dunn,D.L. Harame,Elyse Rosenbaum,B.S. Meyerson	2002	23
20	A Fully-Manufacturable 0.5?m SiGe BiCMOS Technology for Wireless Power Amplifier Applications V. Ramachandran,Alvin Joseph,Jeffrey B. Johnson,Matt Gallagher,Kyle Takayama,帅陈,D. Greenberg,W.E. Ansley,Jayashree Pati,D.L. Harame,J. Dunn	2002	5

About J. Dunn

J. Dunn is a scholar working on Electrical and Electronic Engineering, Bioengineering and Hardware and Architecture, having authored 36 papers that have together received 472 indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (21 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (15 papers), Electrostatic Discharge in Electronics (7 papers), 3D IC and TSV technologies (6 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Microwave Engineering and Waveguides (4 papers) and Silicon Carbide Semiconductor Technologies (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (463 citations), Hardware and Architecture (18 citations) and Condensed Matter Physics (18 citations). J. Dunn has collaborated with scholars based in United States, Austria and Canada. Frequent co-authors include Alvin Joseph, D.L. Harame, L. Lanzerotti, N. Feilchenfeld, Steven H. Voldman, Randy Wolf, Michael S. Gordon, B. Jagannathan, Douglas Coolbaugh and D. Ahlgren. Their work appears in journals such as IEEE Journal of Solid-State Circuits, Proceedings of the IEEE, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics and 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).

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