J. Dunn

935 total citations
36 papers, 472 citations indexed

About

J. Dunn is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surgery. According to data from OpenAlex, J. Dunn has authored 36 papers receiving a total of 472 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Surgery. Recurrent topics in J. Dunn's work include Radio Frequency Integrated Circuit Design (21 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Semiconductor materials and devices (15 papers). J. Dunn is often cited by papers focused on Radio Frequency Integrated Circuit Design (21 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Semiconductor materials and devices (15 papers). J. Dunn collaborates with scholars based in United States, Austria and Canada. J. Dunn's co-authors include Alvin Joseph, D.L. Harame, L. Lanzerotti, N. Feilchenfeld, Steven H. Voldman, Randy Wolf, B. Jagannathan, Michael S. Gordon, Douglas Coolbaugh and D. Ahlgren and has published in prestigious journals such as Proceedings of the IEEE, IEEE Journal of Solid-State Circuits and Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics.

In The Last Decade

J. Dunn

36 papers receiving 425 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Dunn United States 13 463 40 39 21 19 36 472
Shunli Ma China 11 265 0.6× 23 0.6× 78 2.0× 11 0.5× 29 1.5× 50 284
M. Tazlauanu United States 8 531 1.1× 40 1.0× 52 1.3× 23 1.1× 83 4.4× 23 542
Said Rami United States 7 206 0.4× 13 0.3× 27 0.7× 10 0.5× 7 0.4× 21 225
D.B. Estreich United States 11 367 0.8× 49 1.2× 32 0.8× 26 1.2× 4 0.2× 20 379
Jeffrey B. Johnson United States 12 415 0.9× 41 1.0× 41 1.1× 21 1.0× 4 0.2× 49 431
Yong Zhong Xiong Singapore 12 299 0.6× 35 0.9× 38 1.0× 47 2.2× 44 2.3× 35 348
Ralf Pijper Netherlands 12 441 1.0× 29 0.7× 41 1.1× 20 1.0× 21 1.1× 36 457
Jyh-Chyurn Guo Taiwan 13 397 0.9× 23 0.6× 36 0.9× 7 0.3× 12 0.6× 57 409
D. Navarro Japan 9 349 0.8× 37 0.9× 30 0.8× 8 0.4× 4 0.2× 57 372
Qijun Lu China 12 360 0.8× 41 1.0× 30 0.8× 29 1.4× 58 3.1× 28 374

Countries citing papers authored by J. Dunn

Since Specialization
Citations

This map shows the geographic impact of J. Dunn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Dunn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Dunn more than expected).

Fields of papers citing papers by J. Dunn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Dunn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Dunn. The network helps show where J. Dunn may publish in the future.

Co-authorship network of co-authors of J. Dunn

This figure shows the co-authorship network connecting the top 25 collaborators of J. Dunn. A scholar is included among the top collaborators of J. Dunn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Dunn. J. Dunn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sharma, Santosh Kumar, et al.. (2012). Planar dual gate oxide LDMOS structures in 180nm power management technology. 405–408. 11 indexed citations
2.
Minixhofer, Rainer, N. Feilchenfeld, M. Zierak, et al.. (2010). A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration. 75–78. 23 indexed citations
3.
Thompson, Bruce, et al.. (2009). Distributed Power Amplifier with electronic harmonic filtering. 241–244. 1 indexed citations
4.
He, Zhenyu, R. Bolam, F. Chen, et al.. (2008). High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies. 212–215. 2 indexed citations
5.
Joseph, Alvin, Qizhi Liu, Peter Gray, et al.. (2007). A 0.35 ¿m SiGe BiCMOS Technology for Power Amplifier Applications. 198–201. 16 indexed citations
6.
7.
Harame, D.L., X. Wang, B. Jagannathan, et al.. (2006). Semiconductor Technology Choices for Ultrawide-Band (UWB) Systems. 2005. 725–734. 2 indexed citations
8.
Dahlstrǒm, M., et al.. (2006). A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications. 247 250. 1–4. 18 indexed citations
9.
Dunn, J., D.L. Harame, Alvin Joseph, et al.. (2006). SiGe BiCMOS Trends ¿Today and Tomorrow. 39. 695–702. 6 indexed citations
10.
11.
Lanzerotti, L., M. Dahlstrǒm, Michael S. Gordon, et al.. (2005). Collector optimization in advanced SiGe HBT technologies. 4 pp.–4 pp.. 3 indexed citations
12.
Voldman, Steven H., et al.. (2005). Latchup in merged triple well structure. 129–136. 11 indexed citations
13.
Rainey, B.A., Andy Stricker, P. Gray, et al.. (2003). A 0.13 m BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT. 35 indexed citations
14.
Joseph, Alvin, Douglas Coolbaugh, D.L. Harame, et al.. (2003). 0.13 μm 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS. 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315). 1. 180–458. 6 indexed citations
15.
16.
Joseph, Alvin, J. Dunn, G. Freeman, et al.. (2003). Product applications and technology directions with SiGe BiCMOS. IEEE Journal of Solid-State Circuits. 38(9). 1471–1478. 31 indexed citations
17.
Voldman, Steven H., J. Schmidt, Rob Johnson, et al.. (2002). Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors. 239–250. 23 indexed citations
18.
Voldman, Steven H., Rob Johnson, Alvin Joseph, et al.. (2002). Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors. 310–316. 19 indexed citations
19.
20.
Ramachandran, V., Alvin Joseph, Jeffrey B. Johnson, et al.. (2002). A Fully-Manufacturable 0.5?m SiGe BiCMOS Technology for Wireless Power Amplifier Applications. 303–306. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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