D. Schepis

1.1k total citations
16 papers, 171 citations indexed

About

D. Schepis is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, D. Schepis has authored 16 papers receiving a total of 171 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in D. Schepis's work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). D. Schepis is often cited by papers focused on Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). D. Schepis collaborates with scholars based in United States and Germany. D. Schepis's co-authors include B. Davari, A. Ajmera, G. Shahidi, F. Assaderaghi, E. Leobandung, R. Bolam, W. Rausch, D. S. Yee, L. Wagner and P. Duggan and has published in prestigious journals such as Journal of Applied Physics, Solid-State Electronics and IEEE Transactions on Nuclear Science.

In The Last Decade

D. Schepis

16 papers receiving 155 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Schepis United States	9	166	22	18	12	7	16	171
Jan Hoentschel Germany	8	142 0.9×	7 0.3×	27 1.5×	14 1.2×	5 0.7×	26	148
W. Noble United States	11	286 1.7×	23 1.0×	9 0.5×	19 1.6×	9 1.3×	20	294
Andrei Shibkov United States	6	283 1.7×	21 1.0×	6 0.3×	29 2.4×	10 1.4×	32	288
Samuel Tang United States	8	286 1.7×	17 0.8×	43 2.4×	15 1.3×	7 1.0×	10	306
J.E. Moon United States	7	313 1.9×	7 0.3×	28 1.6×	16 1.3×	12 1.7×	11	316
D. Chanemougame France	8	207 1.2×	17 0.8×	31 1.7×	12 1.0×	12 1.7×	15	216
P. Llinarès France	13	307 1.8×	14 0.6×	60 3.3×	31 2.6×	4 0.6×	27	308
Mohan V. Dunga United States	12	362 2.2×	22 1.0×	42 2.3×	14 1.2×	7 1.0×	27	373
Y.T. Chia Taiwan	5	300 1.8×	12 0.5×	24 1.3×	14 1.2×	13 1.9×	13	302
M.M. Pelella United States	11	380 2.3×	23 1.0×	33 1.8×	15 1.3×	18 2.6×	45	395

Countries citing papers authored by D. Schepis

Since Specialization

Citations

This map shows the geographic impact of D. Schepis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Schepis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Schepis more than expected).

Fields of papers citing papers by D. Schepis

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Schepis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Schepis. The network helps show where D. Schepis may publish in the future.

Co-authorship network of co-authors of D. Schepis

This figure shows the co-authorship network connecting the top 25 collaborators of D. Schepis. A scholar is included among the top collaborators of D. Schepis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Schepis. D. Schepis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Holt, J., Anita Madan, M. W. Stoker, et al.. (2013). Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction. Journal of Applied Physics. 114(15). 11 indexed citations

Dube, Abhishek, A. Madan, Zhifeng Zhu, et al.. (2010). (Invited) Epitaxial Growth of Si:C Alloys: Process Development and Challenges. ECS Transactions. 28(1). 63–71. 2 indexed citations

Holt, J., Thomas Adam, S.J. Jeng, et al.. (2008). SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology. ECS Transactions. 16(10). 475–483. 4 indexed citations

Li, Jinghong, A. Domenicucci, Lynne Gignac, et al.. (2008). Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction. ECS Transactions. 16(10). 545–549. 3 indexed citations

Hovel, H.J., Pei‐Yun Tsai, D. Schepis, et al.. (2004). Qualification of 300 mm SOI CMOS substrate material: readiness for development and manufacturing. Solid-State Electronics. 48(6). 1065–1072. 5 indexed citations

Leobandung, E., M. Sherony, R. Schulz, et al.. (2003). High performance 0.18 μm SOI CMOS technology. 679–682. 9 indexed citations

Shahidi, G., A. Ajmera, F. Assaderaghi, et al.. (2003). Partially-depleted SOI technology for digital logic. 426–427. 25 indexed citations

Shahidi, G., A. Ajmera, F. Assaderaghi, et al.. (2003). Device and circuit design issues in SOI technology. 339–346. 10 indexed citations

Assaderaghi, F., G. Shahidi, M. Hargrove, et al.. (2002). History dependence of non-fully depleted (NFD) digital SOI circuits. 122–123. 7 indexed citations

10.

Leobandung, E., M. Sherony, J.W. Sleight, et al.. (2002). Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation. 403–406. 19 indexed citations

11.

Assaderaghi, F., W. Rausch, A. Ajmera, et al.. (2002). A 7.9/5.5 psec room/low temperature SOI CMOS. 415–418. 19 indexed citations

12.

YOSIDA, Tosihide H., A. Ajmera, D. Schepis, et al.. (2002). High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node. 29.2.1–29.2.4. 21 indexed citations

13.

Fung, S.K.H., Mukesh Khare, D. Schepis, et al.. (2002). Gate length scaling accelerated to 30 nm regime using ultra-thin film PD-SOI technology. 29.3.1–29.3.4. 8 indexed citations

14.

Ajmera, A., J.W. Sleight, F. Assaderaghi, et al.. (1999). A 0.22 /spl mu/m CMOS-SOI technology with a Cu BEOL. 15–16. 5 indexed citations

15.

Duggan, P., et al.. (1997). Total-dose and SEU characterization of 0.25 micron CMOS/SOI integrated circuit memory technologies. IEEE Transactions on Nuclear Science. 44(6). 2134–2139. 22 indexed citations

16.

Huang, Wu‐Song, et al.. (1996). Negative-tone resist system using vinyl cyclic acetal crosslinker. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2724. 315–315. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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