N. Feilchenfeld

508 total citations
17 papers, 174 citations indexed

About

N. Feilchenfeld is a scholar working on Electrical and Electronic Engineering, Surgery and Hardware and Architecture. According to data from OpenAlex, N. Feilchenfeld has authored 17 papers receiving a total of 174 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 1 paper in Surgery and 1 paper in Hardware and Architecture. Recurrent topics in N. Feilchenfeld's work include Advancements in Semiconductor Devices and Circuit Design (11 papers), Semiconductor materials and devices (10 papers) and Silicon Carbide Semiconductor Technologies (8 papers). N. Feilchenfeld is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (11 papers), Semiconductor materials and devices (10 papers) and Silicon Carbide Semiconductor Technologies (8 papers). N. Feilchenfeld collaborates with scholars based in United States and Austria. N. Feilchenfeld's co-authors include J. Dunn, L. Lanzerotti, D.L. Harame, Alvin Joseph, Steven H. Voldman, B. Jagannathan, E. Nowak, J. H. Magerlein, M. Zierak and Douglas Coolbaugh and has published in prestigious journals such as Proceedings of the IEEE.

In The Last Decade

N. Feilchenfeld

17 papers receiving 152 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Feilchenfeld United States 8 171 10 7 6 6 17 174
Kota Matsushita Japan 7 273 1.6× 19 1.9× 11 1.6× 6 1.0× 5 0.8× 8 276
Uma Sharma India 11 317 1.9× 7 0.7× 7 1.0× 3 0.5× 8 1.3× 26 325
N. Sadachika Japan 9 303 1.8× 21 2.1× 4 0.6× 7 1.2× 14 2.3× 38 310
J. Mazurier France 8 175 1.0× 17 1.7× 2 0.3× 3 0.5× 4 0.7× 22 177
Jan Hoentschel Germany 8 142 0.8× 27 2.7× 2 0.3× 4 0.7× 7 1.2× 26 148
F. Pagette United States 5 105 0.6× 12 1.2× 2 0.3× 5 0.8× 4 0.7× 6 110
G.O. Workman United States 11 311 1.8× 19 1.9× 2 0.3× 4 0.7× 10 1.7× 24 323
D. Coolbaugh United States 6 117 0.7× 8 0.8× 3 0.5× 6 1.0× 12 117
Peter Gray United States 6 98 0.6× 12 1.2× 3 0.4× 6 1.0× 1 0.2× 14 98
K. Vaed United States 5 140 0.8× 17 1.7× 5 0.7× 1 0.2× 2 0.3× 7 142

Countries citing papers authored by N. Feilchenfeld

Since Specialization
Citations

This map shows the geographic impact of N. Feilchenfeld's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Feilchenfeld with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Feilchenfeld more than expected).

Fields of papers citing papers by N. Feilchenfeld

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Feilchenfeld. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Feilchenfeld. The network helps show where N. Feilchenfeld may publish in the future.

Co-authorship network of co-authors of N. Feilchenfeld

This figure shows the co-authorship network connecting the top 25 collaborators of N. Feilchenfeld. A scholar is included among the top collaborators of N. Feilchenfeld based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Feilchenfeld. N. Feilchenfeld is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Zierak, M., N. Feilchenfeld, Chaojiang Li, & Ted Letavic. (2015). Fully-isolated silicon RF LDMOS for high-efficiency mobile power conversion and RF amplification. 337–340. 5 indexed citations
2.
Li, Chaojiang, M. Zierak, Randy Wolf, et al.. (2014). A 19DBM 5.8GHzz PA demonstrator with a novel low ron high FT RF LDMOS. 58. 1–4. 1 indexed citations
3.
4.
Sharma, Santosh Kumar, et al.. (2012). Planar dual gate oxide LDMOS structures in 180nm power management technology. 405–408. 11 indexed citations
5.
6.
Ellis-Monaghan, John, et al.. (2012). A 90 to 170V scalable P-LDMOS with accompanied high voltage PJFET. 129–132. 2 indexed citations
7.
Feilchenfeld, N., et al.. (2011). Drift design impact on quasi-saturation & HCI for scalable N-LDMOS. 215–218. 4 indexed citations
8.
Minixhofer, Rainer, N. Feilchenfeld, M. Zierak, et al.. (2010). A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration. 75–78. 23 indexed citations
9.
He, Zhenyu, R. Bolam, F. Chen, et al.. (2008). High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies. 212–215. 2 indexed citations
10.
Dunn, J., D.L. Harame, Alvin Joseph, et al.. (2006). SiGe BiCMOS Trends ¿Today and Tomorrow. 39. 695–702. 6 indexed citations
11.
Joseph, Alvin, D.L. Harame, B. Jagannathan, et al.. (2005). Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. Proceedings of the IEEE. 93(9). 1539–1558. 53 indexed citations
12.
Voldman, Steven H., et al.. (2005). Latchup in merged triple well structure. 129–136. 11 indexed citations
13.
14.
Gray, Peter, B.A. Rainey, Andy Stricker, et al.. (2005). High performance, low complexity vertical PNP BJT integrated in a 0.18μm SiGe BiCMOS technology. 136–140. 2 indexed citations
15.
16.
Voldman, Steven H., Rob Johnson, L. Lanzerotti, et al.. (2002). ESD robustness of a BiCMOS SiGe technology. 214–217. 13 indexed citations
17.
Dunn, J., D.L. Harame, Alvin Joseph, et al.. (2002). Trends in silicon germanium BiCMOS integration and reliability. 237–242. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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