J.W. Sleight

3.0k total citations · 1 hit paper
63 papers, 2.0k citations indexed

About

J.W. Sleight is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J.W. Sleight has authored 63 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 17 papers in Biomedical Engineering. Recurrent topics in J.W. Sleight's work include Advancements in Semiconductor Devices and Circuit Design (46 papers), Semiconductor materials and devices (44 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). J.W. Sleight is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (46 papers), Semiconductor materials and devices (44 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). J.W. Sleight collaborates with scholars based in United States, Canada and Israel. J.W. Sleight's co-authors include L. Šekarić, Sarunya Bangsaruntip, G. M. Cohen, Wilfried Haensch, Amlan Majumdar, Mark A. Reed, M. R. Deshpande, David Fried, J. M. Hergenrother and R.H. Dennard and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

J.W. Sleight

62 papers receiving 1.9k citations

Hit Papers

Stable SRAM cell design for the 32 nm node and beyond 2005 2026 2012 2019 2005 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.W. Sleight United States 22 1.7k 457 333 149 119 63 2.0k
R. Kotlyar United States 26 1.9k 1.1× 566 1.2× 639 1.9× 586 3.9× 64 0.5× 56 2.4k
A.J. Scholten Netherlands 25 2.2k 1.2× 271 0.6× 213 0.6× 157 1.1× 65 0.5× 119 2.3k
Arnaud Bournel France 25 1.2k 0.7× 139 0.3× 837 2.5× 732 4.9× 46 0.4× 103 1.7k
T. S. Moise United States 19 1.1k 0.6× 233 0.5× 618 1.9× 541 3.6× 19 0.2× 69 1.4k
B. N. Engel United States 11 807 0.5× 142 0.3× 1.1k 3.4× 214 1.4× 42 0.4× 19 1.4k
Sylvain Barraud France 29 3.3k 1.9× 865 1.9× 1.3k 4.0× 318 2.1× 25 0.2× 271 3.9k
M. A. McCord United States 20 712 0.4× 568 1.2× 646 1.9× 169 1.1× 13 0.1× 78 1.3k
Christoph Jungemann Germany 24 2.4k 1.4× 214 0.5× 603 1.8× 236 1.6× 10 0.1× 232 2.5k
M. Nakamura Japan 25 1.7k 1.0× 133 0.3× 1.2k 3.5× 36 0.2× 40 0.3× 61 1.8k
Mo Li China 15 351 0.2× 197 0.4× 249 0.7× 199 1.3× 106 0.9× 117 789

Countries citing papers authored by J.W. Sleight

Since Specialization
Citations

This map shows the geographic impact of J.W. Sleight's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.W. Sleight with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.W. Sleight more than expected).

Fields of papers citing papers by J.W. Sleight

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.W. Sleight. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.W. Sleight. The network helps show where J.W. Sleight may publish in the future.

Co-authorship network of co-authors of J.W. Sleight

This figure shows the co-authorship network connecting the top 25 collaborators of J.W. Sleight. A scholar is included among the top collaborators of J.W. Sleight based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.W. Sleight. J.W. Sleight is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kurter, Cihan, Conal E. Murray, R. T. Gordon, et al.. (2022). Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits. npj Quantum Information. 8(1). 20 indexed citations
2.
Gordon, R. T., Conal E. Murray, Cihan Kurter, et al.. (2022). Environmental radiation impact on lifetimes and quasiparticle tunneling rates of fixed-frequency transmon qubits. Applied Physics Letters. 120(7). 37 indexed citations
3.
Bangsaruntip, Sarunya, Karthik Balakrishnan, Josephine Chang, et al.. (2013). Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond. 20.2.1–20.2.4. 79 indexed citations
4.
Gignac, Lynne, et al.. (2011). Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices. Microscopy and Microanalysis. 17(6). 889–895. 4 indexed citations
5.
Bangsaruntip, Sarunya, A. Majumdar, G. M. Cohen, et al.. (2010). Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm. 21–22. 43 indexed citations
6.
Sleight, J.W., Sarunya Bangsaruntip, G. M. Cohen, et al.. (2010). (Invited) High Performance and Highly Uniform Metal Hi-K Gate-All-Around Silicon Nanowire MOSFETs. ECS Transactions. 28(1). 179–189. 1 indexed citations
7.
Bangsaruntip, Sarunya, G. M. Cohen, A. Majumdar, et al.. (2009). High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling. 1–4. 239 indexed citations
8.
Tulipe, Douglas Charles La, et al.. (2008). Upside-down FETS. 23–24. 1 indexed citations
9.
Sleight, J.W., J. M. Hergenrother, K.A. Jenkins, et al.. (2006). Stress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths. 505–508. 11 indexed citations
10.
Sleight, J.W., Isaac Lauer, O. Dokumaci, et al.. (2006). Challenges and Opportunities for High Performance 32 nm CMOS Technology. 1–4. 36 indexed citations
11.
Kim, Jonghae, Jean‐Olivier Plouchart, N. Zamdmer, et al.. (2004). Highly manufacturable 40-50 GHz VCOs in a 120 nm system-on-chip SOI technology. 44. 15.3.1–15.3.4. 5 indexed citations
12.
Leobandung, E., M. Sherony, J.W. Sleight, et al.. (2002). Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation. 403–406. 19 indexed citations
13.
Fung, S.K.H., L. Wagner, M. Sherony, et al.. (2002). A partially-depleted SOI compact model - formulation and parameter extraction. 206–207. 4 indexed citations
15.
YOSIDA, Tosihide H., A. Ajmera, D. Schepis, et al.. (2002). High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node. 29.2.1–29.2.4. 21 indexed citations
16.
Ajmera, A., J.W. Sleight, F. Assaderaghi, et al.. (1999). A 0.22 /spl mu/m CMOS-SOI technology with a Cu BEOL. 15–16. 5 indexed citations
17.
Sleight, J.W. & K. Mistry. (1999). DC and transient characterization of a compact Schottky body contact technology for SOI transistors. IEEE Transactions on Electron Devices. 46(7). 1451–1456. 5 indexed citations
18.
Amman, M., J.W. Sleight, Roger E. Welser, et al.. (1996). Atomic force microscopy study of electron beam written contamination structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(1). 54–62. 43 indexed citations
19.
Ling, Xinsheng, Nicholas D. Rizzo, J.W. Sleight, et al.. (1995). Fluctuation Effects on a Strongly Pinned Vortex Lattice in a Thin Type-II Superconducting Wire. Physical Review Letters. 74(5). 805–808. 12 indexed citations
20.
Deshpande, M. R., P. Kozodoy, Nynke H. Dekker, et al.. (1994). Low-dimensional resonant tunnelling and Coulomb blockade: a comparison of fabricated versus impurity confinement. Semiconductor Science and Technology. 9(11S). 1919–1924. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026