D. Harmon

1.1k total citations
26 papers, 765 citations indexed

About

D. Harmon is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, D. Harmon has authored 26 papers receiving a total of 765 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 4 papers in Materials Chemistry. Recurrent topics in D. Harmon's work include Semiconductor materials and devices (20 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). D. Harmon is often cited by papers focused on Semiconductor materials and devices (20 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). D. Harmon collaborates with scholars based in United States, Spain and Taiwan. D. Harmon's co-authors include Ernest Y. Wu, A. Vayshenker, E. Nowak, W. Lai, J. Suñé, J. A. McKenna, R.‐P. Vollertsen, T. Sullivan, J. Gill and D. Dobuzinsky and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

D. Harmon

26 papers receiving 716 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Harmon United States 15 727 156 129 43 43 26 765
Ih-Chin Chen United States 10 957 1.3× 121 0.8× 188 1.5× 13 0.3× 47 1.1× 23 987
L.W. Schaper United States 15 563 0.8× 108 0.7× 110 0.9× 58 1.3× 23 0.5× 64 669
Ritwik Chatterjee United States 16 909 1.3× 85 0.5× 60 0.5× 39 0.9× 45 1.0× 31 952
H. Ceric Austria 15 767 1.1× 347 2.2× 78 0.6× 103 2.4× 16 0.4× 102 835
Harry A. Schafft United States 13 603 0.8× 291 1.9× 97 0.8× 65 1.5× 30 0.7× 47 690
W. Cote United States 8 334 0.5× 170 1.1× 71 0.6× 43 1.0× 31 0.7× 15 411
S. Nitta United States 8 233 0.3× 77 0.5× 93 0.7× 16 0.4× 17 0.4× 20 350
Jing‐Cheng Lin Taiwan 10 308 0.4× 171 1.1× 102 0.8× 177 4.1× 13 0.3× 17 402
S. Kadomura Japan 11 499 0.7× 170 1.1× 75 0.6× 68 1.6× 8 0.2× 43 542
Ho-Kyu Kang South Korea 12 639 0.9× 95 0.6× 421 3.3× 33 0.8× 14 0.3× 35 722

Countries citing papers authored by D. Harmon

Since Specialization
Citations

This map shows the geographic impact of D. Harmon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Harmon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Harmon more than expected).

Fields of papers citing papers by D. Harmon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Harmon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Harmon. The network helps show where D. Harmon may publish in the future.

Co-authorship network of co-authors of D. Harmon

This figure shows the co-authorship network connecting the top 25 collaborators of D. Harmon. A scholar is included among the top collaborators of D. Harmon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Harmon. D. Harmon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ioannou, Dimitris P., D. Harmon, & W.W. Abadeer. (2009). Investigation of Plasma Charging damage impact on device and gate dielectric reliability in 180nm SOI CMOS RF switch technology. 47. 1011–1013. 4 indexed citations
2.
Chen, F., O. Martı́nez, D. Harmon, M. Shinosky, & J. Aitken. (2008). Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies. Microelectronics Reliability. 48(8-9). 1375–1383. 37 indexed citations
3.
Hook, Terence B., et al.. (2006). Charging Damage and Product Impact in a Bulk CMOS Technology. 1–4. 3 indexed citations
4.
Harmon, D., et al.. (2006). Ultra-thin Gate Dielectric Plasma Charging Damage in SOI Technology. 370–373. 13 indexed citations
5.
Chen, F., J. Gill, D. Harmon, et al.. (2005). Determination of the thermal conductivity of composite low-k dielectrics for advanced interconnect structures. Microelectronics Reliability. 46(2-4). 232–243. 8 indexed citations
6.
Li, Baozhen, et al.. (2005). Thermal and electromigration challenges for advanced interconnects. 34. 46–51. 3 indexed citations
7.
Watson, K., Chen Fen, J. Gill, et al.. (2004). Characterization and reliability of TaN thin film resistors. 502–508. 21 indexed citations
8.
9.
Wu, Ernest Y., J. Suñé, W. Lai, et al.. (2003). Critical reliability challenges in scaling SiO2-based dielectric to its limit. Microelectronics Reliability. 43(8). 1175–1184. 25 indexed citations
10.
Gill, J., et al.. (2003). Predicting thermal behavior of interconnects. 54–60. 8 indexed citations
11.
Wu, Ernest Y., W. Lai, Mukesh Khare, et al.. (2003). Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide. 60–72. 18 indexed citations
12.
Chen, Fen, R.‐P. Vollertsen, Baozhen Li, D. Harmon, & W. Lai. (2002). A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride–oxide dielectrics. Microelectronics Reliability. 42(3). 335–341. 5 indexed citations
13.
Harmon, D., J. Gill, & T. Sullivan. (2002). Thermal conductance of IC interconnects embedded in dielectrics. eos 4. 1–9. 21 indexed citations
14.
Wu, Ernest Y., J. Aitken, E. Nowak, et al.. (2002). Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides. 541–544. 67 indexed citations
15.
Wu, Ernest Y., E. Nowak, A. Vayshenker, W. Lai, & D. Harmon. (2002). CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics. IBM Journal of Research and Development. 46(2.3). 287–298. 62 indexed citations
16.
Wu, Ernest Y., J. Suñé, W. Lai, et al.. (2001). Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides. Microelectronic Engineering. 59(1-4). 25–31. 15 indexed citations
17.
Wu, Ernest Y., E. Nowak, A. Vayshenker, et al.. (2001). New global insight in ultrathin oxide reliability using accurate experimental methodology and comprehensive database. IEEE Transactions on Device and Materials Reliability. 1(1). 69–80. 31 indexed citations
18.
Wu, Ernest Y., et al.. (2000). Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides. IEEE Electron Device Letters. 21(7). 362–364. 34 indexed citations
19.
Harmon, D., et al.. (1982). Optimization of Plasma Processing for Silicon-Gate FET Manufacturing Applications. IBM Journal of Research and Development. 26(5). 580–589. 4 indexed citations
20.
White, F., et al.. (1982). Plasma Etching of Composite Silicide Gate Electrodes. Journal of The Electrochemical Society. 129(6). 1330–1335. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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