J. B. Lasky

1.5k total citations · 1 hit paper
14 papers, 1.1k citations indexed

About

J. B. Lasky is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. B. Lasky has authored 14 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. B. Lasky's work include Semiconductor materials and devices (9 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). J. B. Lasky is often cited by papers focused on Semiconductor materials and devices (9 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). J. B. Lasky collaborates with scholars based in United States. J. B. Lasky's co-authors include James Nakos, O.J. Cain, A. E. Michel, T. O. Sedgwick, S. A. Cohen, V. R. Deline, S. R. Stiffler, P. R. Moran, F. White and Charles W. Koburger and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

J. B. Lasky

14 papers receiving 969 citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Wafer bonding for silicon-on-insulator technologies

1986 421 citations J. B. Lasky Applied Physics Letters profile →

Peers

Countries citing papers authored by J. B. Lasky

Since Specialization

Citations

This map shows the geographic impact of J. B. Lasky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. B. Lasky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. B. Lasky more than expected).

Fields of papers citing papers by J. B. Lasky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. B. Lasky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. B. Lasky. The network helps show where J. B. Lasky may publish in the future.

Co-authorship network of co-authors of J. B. Lasky

This figure shows the co-authorship network connecting the top 25 collaborators of J. B. Lasky. A scholar is included among the top collaborators of J. B. Lasky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. B. Lasky. J. B. Lasky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

#	Work	Indexed citations
1	A new three-dimensional MOSFET gate-induced drain leakage effect in narrow deep submicron devices 2002 ·S. Geißler, (unknown), J. B. Lasky, J. Johnson, Steven H. Voldman	4
2	Nano-defects in commercial bonded SOI and SIMOX 2002 ·D. K. Sadana, J. B. Lasky, H.J. Hovel, Karen Petrillo, P. Roitman	8
3	A 0.22 /spl mu/m CMOS-SOI technology with a Cu BEOL 1999 ·A. Ajmera, J.W. Sleight, F. Assaderaghi, R. Bolam, A. Bryant, Mark W. Coffey, H.J. Hovel, J. B. Lasky, E. Leobandung, W. Rausch, D. K. Sadana, D. Schepis, L. Wagner, (unknown), B. Davari, G. Shahidi	5
4	Plasma-induced gate-oxide charging issues for sub-0.5 μm complementary metal–oxide–semiconductor technologies 1995 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. K. Stamper, J. B. Lasky, J. Adkisson	21
5	The evolution of IBM CMOS DRAM technology 1995 ·IBM Journal of Research and Development ·E.L. Adler, J. DeBrosse, S. Geißler, Steven J. Holmes, M. Jaffé, Jeffrey B. Johnson, Charles W. Koburger, J. B. Lasky, Bryn Lloyd, G. L. Miles, James Nakos, W. Noble, Steven H. Voldman, (unknown), Richard A. Ferguson	35
6	Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/ 1991 ·IEEE Transactions on Electron Devices ·J. B. Lasky, James Nakos, O.J. Cain, (unknown)	274
7	Oxidation-induced defect generation in advanced DRAM structures 1990 ·IEEE Transactions on Electron Devices ·S. R. Stiffler, J. B. Lasky, Charles W. Koburger, (unknown)	20
8	Transient boron diffusion in ion-implanted crystalline and amorphous silicon 1988 ·Journal of Applied Physics ·T. O. Sedgwick, A. E. Michel, V. R. Deline, S. A. Cohen, J. B. Lasky	133
9	Wafer bonding for silicon-on-insulator technologies breakdown → 1986 ·Applied Physics Letters ·J. B. Lasky	421
10	Silicon-on-insulator (SOI) by bonding and ETCH-back 1985 ·J. B. Lasky, S. R. Stiffler, F. White, (unknown)	53
11	Rapid isothermal annealing of boron ion implanted junctions 1983 ·Journal of Applied Physics ·J. B. Lasky	44
12	Effects of various encapsulating films on laser recrystallization of silicon on SiO2 1982 ·Journal of Applied Physics ·J. B. Lasky	8
13	Thermoluminescent response of LiF (TLD-100) to 0.1–5-keV electrons: An energy-range relationship and comparison of the TL glow with TSEE glow curves 1979 ·Journal of Applied Physics ·J. B. Lasky, P. R. Moran	11
14	Thermoluminescent response of LiF (TLD-100) to 5-30 keV electrons and the effect of annealing in various atmospheres 1977 ·Physics in Medicine and Biology ·J. B. Lasky, P. R. Moran	18

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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