N. Rovedo

878 total citations
20 papers, 396 citations indexed

About

N. Rovedo is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Rovedo has authored 20 papers receiving a total of 396 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 3 papers in Biomedical Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Rovedo's work include Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). N. Rovedo is often cited by papers focused on Semiconductor materials and devices (17 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). N. Rovedo collaborates with scholars based in United States, Germany and Japan. N. Rovedo's co-authors include S. Ogura, Terence B. Hook, K. Schruefer, T. N. Buti, F Guarin, E.L. Adler, C.F. Codella, C. Wann, J. Shepard and Shih-Fen Huang and has published in prestigious journals such as IEEE Transactions on Electron Devices, Thin Solid Films and Japanese Journal of Applied Physics.

In The Last Decade

N. Rovedo

19 papers receiving 378 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
N. Rovedo United States	10	394	46	34	27	6	20	396
Ralf Pijper Netherlands	12	441 1.1×	41 0.9×	20 0.6×	29 1.1×	3 0.5×	36	457
Shiying Xiong United States	5	419 1.1×	65 1.4×	23 0.7×	30 1.1×	8 1.3×	5	435
K. Schruefer United States	12	484 1.2×	102 2.2×	24 0.7×	31 1.1×	6 1.0×	32	488
R.J.P. Lander Belgium	11	300 0.8×	43 0.9×	16 0.5×	55 2.0×	4 0.7×	24	312
B.M. Tenbroek United Kingdom	10	391 1.0×	47 1.0×	59 1.7×	25 0.9×	2 0.3×	19	399
M. Paoli France	8	404 1.0×	80 1.7×	23 0.7×	28 1.0×	5 0.8×	17	416
I.-C. Chen United States	9	239 0.6×	25 0.5×	29 0.9×	29 1.1×	12 2.0×	22	253
Rafael Rios United States	10	426 1.1×	108 2.3×	37 1.1×	35 1.3×	5 0.8×	18	440
R. Schreutelkamp Belgium	10	257 0.7×	51 1.1×	41 1.2×	39 1.4×	7 1.2×	31	276
C. Kerner Belgium	11	347 0.9×	40 0.9×	26 0.8×	63 2.3×	6 1.0×	33	360

Countries citing papers authored by N. Rovedo

Since Specialization

Citations

This map shows the geographic impact of N. Rovedo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Rovedo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Rovedo more than expected).

Fields of papers citing papers by N. Rovedo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Rovedo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Rovedo. The network helps show where N. Rovedo may publish in the future.

Co-authorship network of co-authors of N. Rovedo

This figure shows the co-authorship network connecting the top 25 collaborators of N. Rovedo. A scholar is included among the top collaborators of N. Rovedo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Rovedo. N. Rovedo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nayfeh, Hasan M., N. Rovedo, A. Bryant, et al.. (2009). Impact of Lateral Asymmetric Channel Doping on 45-nm-Technology N-Type SOI MOSFETs. IEEE Transactions on Electron Devices. 56(12). 3097–3105. 12 indexed citations

Yuan, Jun, V. Chan, N. Rovedo, et al.. (2009). Blanket SMT With In Situ N2 Plasma Treatment on the $\langle \hbox{100} \rangle$ Wafer for the Low-Cost Low-Power Technology Application. IEEE Electron Device Letters. 30(9). 916–918. 1 indexed citations

Li, Jinghong, A. Domenicucci, Lynne Gignac, et al.. (2008). Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction. ECS Transactions. 16(10). 545–549. 3 indexed citations

Liu, Yaocheng, Oleg Gluschenkov, Jinghong Li, et al.. (2007). Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy. 44–45. 30 indexed citations

Chan, V., R. Rengarajan, N. Rovedo, et al.. (2006). A robust 45nm gate-length CMOSFET for 90nm Hi-speed technology. Solid-State Electronics. 50(4). 579–586.

Yang, Min, J. Holt, Siddhartha Panda, et al.. (2005). Investigation of CMOS devices with embedded sige source/drain on hybrid orientation substrates. 28–29. 20 indexed citations

Chan, V., R. Rengarajan, N. Rovedo, et al.. (2004). High speed 45nm gate length CMOSFETs integrated into a 90nm bulk technology incorporating strain engineering. 3.8.1–3.8.4. 58 indexed citations

Hook, Terence B., et al.. (2004). Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration. Microelectronics Reliability. 45(1). 47–56. 6 indexed citations

Buti, T. N., et al.. (2003). Asymmetrical halo source GOLD drain (HS-GOLD) deep sub-half micron n-MOSFET design for reliability and performance. 617–620. 7 indexed citations

10.

Lin, Chih‐Yung, K. Schruefer, N. Rovedo, et al.. (2002). Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics. 39.2.1–39.2.4. 31 indexed citations

11.

Huang, Shih-Fen, C. Wann, M. Eller, et al.. (2002). Scalability and biasing strategy for CMOS with active well bias. 107–108. 24 indexed citations

12.

Rovedo, N., et al.. (2002). Process design for merged complementary BiCMOS. 485–488. 4 indexed citations

13.

Schruefer, K., et al.. (2002). Mechanism of Threshold Voltage Shift (ΔV_th) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs. Japanese Journal of Applied Physics. 41(Part 1, No. 4B). 2423–2425. 38 indexed citations

14.

Hook, Terence B., et al.. (2001). The effects of fluorine on parametrics and reliability in a 0.18-μm 3.5/6.8 nm dual gate oxide CMOS technology. IEEE Transactions on Electron Devices. 48(7). 1346–1353. 63 indexed citations

15.

Rovedo, N., et al.. (1993). Fabrication of extremely thin silicon on insulator for fully-depleted CMOS applications. Thin Solid Films. 232(1). 105–109. 3 indexed citations

16.

Buti, T. N., et al.. (1991). A new asymmetrical halo source GOLD drain (HS-GOLD) deep sub-half-micrometer n-MOSFET design for reliability and performance. IEEE Transactions on Electron Devices. 38(8). 1757–1764. 41 indexed citations

17.

Ogura, S., et al.. (1990). Merged complementary BiCMOS for logic applications. 81–82. 8 indexed citations

18.

Ogura, S., et al.. (1986). Submicron MOSFET performance at liquid nitrogen temperatures. 160–161. 3 indexed citations

19.

Ogura, S., et al.. (1982). An Optimized Half Micron Device Using The Double-Implanted Lightly Doped Drain/Source Structure. Symposium on VLSI Technology. 42–43. 3 indexed citations

20.

Ogura, S., et al.. (1982). A half micron MOSFET using double implanted LDD. 718–721. 41 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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