W. Lai

797 total citations
23 papers, 540 citations indexed

About

W. Lai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, W. Lai has authored 23 papers receiving a total of 540 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 1 paper in Hardware and Architecture. Recurrent topics in W. Lai's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). W. Lai is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). W. Lai collaborates with scholars based in United States, Spain and France. W. Lai's co-authors include Ernest Y. Wu, J. Suñé, E. Nowak, A. Vayshenker, D. Harmon, J. A. McKenna, R.‐P. Vollertsen, B.P. Linder, James McKenna and David Jiménez and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and IBM Journal of Research and Development.

In The Last Decade

W. Lai

23 papers receiving 508 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Lai United States 13 518 71 55 35 25 23 540
A. Vayshenker United States 13 661 1.3× 76 1.1× 64 1.2× 44 1.3× 26 1.0× 16 679
Jeff J. Peterson United States 16 629 1.2× 145 2.0× 34 0.6× 16 0.5× 39 1.6× 35 660
Kaizad Mistry United States 5 396 0.8× 133 1.9× 23 0.4× 39 1.1× 10 0.4× 8 427
C. Caillat Belgium 11 359 0.7× 68 1.0× 20 0.4× 18 0.5× 22 0.9× 33 368
Trong Huynh-Bao Belgium 13 636 1.2× 56 0.8× 23 0.4× 46 1.3× 18 0.7× 23 678
C. Papadas France 14 480 0.9× 129 1.8× 25 0.5× 10 0.3× 22 0.9× 60 508
F. Matsuoka Japan 12 521 1.0× 20 0.3× 31 0.6× 36 1.0× 12 0.5× 49 526
Juergen Boemmels Belgium 7 316 0.6× 36 0.5× 46 0.8× 16 0.5× 5 0.2× 28 351
Jenn-Gang Chern United States 7 420 0.8× 30 0.4× 14 0.3× 23 0.7× 17 0.7× 13 436
Ki-Hyun Yoon South Korea 8 340 0.7× 80 1.1× 39 0.7× 15 0.4× 28 1.1× 12 367

Countries citing papers authored by W. Lai

Since Specialization
Citations

This map shows the geographic impact of W. Lai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Lai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Lai more than expected).

Fields of papers citing papers by W. Lai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Lai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Lai. The network helps show where W. Lai may publish in the future.

Co-authorship network of co-authors of W. Lai

This figure shows the co-authorship network connecting the top 25 collaborators of W. Lai. A scholar is included among the top collaborators of W. Lai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Lai. W. Lai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rosa, Giuseppe La, F Guarin, W. Lai, et al.. (2014). Process dependence of AC/DC PBTI in HKMG n-MOSFETs. XT.6.1–XT.6.5. 5 indexed citations
2.
Ando, Takashi, Balaji Kannan, U. Kwon, et al.. (2014). Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond. 23. 1–2. 12 indexed citations
3.
4.
Rosa, Giuseppe La, Suresh Uppal, William E. McMahon, et al.. (2013). Impact of hydrogen in capping layers on BTI degradation and recovery in high-κ replacement metal gate transistors. PI.3.1–PI.3.5. 2 indexed citations
5.
Suñé, J., Ernest Y. Wu, & W. Lai. (2006). Statistics of competing post-breakdown failure modes in ultrathin MOS devices. IEEE Transactions on Electron Devices. 53(2). 224–234. 36 indexed citations
6.
Wu, Ernest Y., J. Suñé, W. Lai, A. Vayshenker, & D. Harmon. (2006). A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode. 92. 396–399. 13 indexed citations
7.
Suñé, J., Ernest Y. Wu, & W. Lai. (2004). Successive Oxide Breakdown Statistics: Correlation Effects, Reliability Methodologies, and Their Limits. IEEE Transactions on Electron Devices. 51(10). 1584–1592. 34 indexed citations
8.
9.
Lai, W., Ernest Y. Wu, & J. Suñé. (2004). Critical evaluation of hard-breakdown based reliability methodologies for ultrathin gate oxides. Microelectronic Engineering. 72(1-4). 16–23. 5 indexed citations
10.
Wu, Ernest Y., J. Suñé, B.P. Linder, J. H. Stathis, & W. Lai. (2004). Critical assessment of soft breakdown stability time and the implementation of new post-breakdown methodology for ultra-thin gate oxides [MOSFET]. 38.1.1–38.1.4. 18 indexed citations
11.
Suñé, J., Ernest Y. Wu, & W. Lai. (2004). Limits of the successive breakdown statistics to assess chip reliability. Microelectronic Engineering. 72(1-4). 39–44. 6 indexed citations
12.
Wu, Ernest Y., J. Suñé, W. Lai, et al.. (2003). Critical reliability challenges in scaling SiO2-based dielectric to its limit. Microelectronics Reliability. 43(8). 1175–1184. 25 indexed citations
13.
Wu, Ernest Y., W. Lai, Mukesh Khare, et al.. (2003). Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide. 60–72. 18 indexed citations
14.
Suñé, J., Ernest Y. Wu, David Jiménez, & W. Lai. (2003). Statistics of soft and hard breakdown in thin SiO2 gate oxides. Microelectronics Reliability. 43(8). 1185–1192. 14 indexed citations
15.
Chen, Fen, R.‐P. Vollertsen, Baozhen Li, D. Harmon, & W. Lai. (2002). A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride–oxide dielectrics. Microelectronics Reliability. 42(3). 335–341. 5 indexed citations
16.
Wu, Ernest Y., E. Nowak, A. Vayshenker, W. Lai, & D. Harmon. (2002). CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics. IBM Journal of Research and Development. 46(2.3). 287–298. 62 indexed citations
17.
Wu, Ernest Y., J. Suñé, W. Lai, et al.. (2002). Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides. Solid-State Electronics. 46(11). 1787–1798. 88 indexed citations
18.
Wu, Ernest Y., A. Vayshenker, E. Nowak, et al.. (2002). Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown. IEEE Transactions on Electron Devices. 49(12). 2244–2253. 106 indexed citations
19.
Wu, Ernest Y., J. Suñé, W. Lai, et al.. (2001). Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides. Microelectronic Engineering. 59(1-4). 25–31. 15 indexed citations
20.
Wu, Ernest Y., James McKenna, W. Lai, E. Nowak, & A. Vayshenker. (2001). The effect of change of voltage acceleration on temperature activation of oxide breakdown for ultrathin oxides. IEEE Electron Device Letters. 22(12). 603–605. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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