T. Ghani

7.7k total citations · 1 hit paper
33 papers, 2.3k citations indexed

About

T. Ghani is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Ghani has authored 33 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 7 papers in Biomedical Engineering and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Ghani's work include Advancements in Semiconductor Devices and Circuit Design (24 papers), Semiconductor materials and devices (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). T. Ghani is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (24 papers), Semiconductor materials and devices (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). T. Ghani collaborates with scholars based in United States, United Kingdom and Japan. T. Ghani's co-authors include M. Bohr, K. Mistry, R. Chau, Scott E. Thompson, Kaizad Mistry, S. Tyagi, Dmitri E. Nikonov, A. Murthy, C. Auth and M Armstrong and has published in prestigious journals such as Nature, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

T. Ghani

30 papers receiving 2.2k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

The future transistors

2023 288 citations Wei Cao, Huiming Bu et al. Nature profile →

Peers

Countries citing papers authored by T. Ghani

Since Specialization

Citations

This map shows the geographic impact of T. Ghani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ghani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ghani more than expected).

Fields of papers citing papers by T. Ghani

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ghani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ghani. The network helps show where T. Ghani may publish in the future.

Co-authorship network of co-authors of T. Ghani

This figure shows the co-authorship network connecting the top 25 collaborators of T. Ghani. A scholar is included among the top collaborators of T. Ghani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Ghani. T. Ghani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Beyond RibbonFET: Energy Efficiency Innovations to Drive Technology and Design for the Next Decade 2025 ·Chung-Hsun Lin, B. Greene, Hai Li, Raseong Kim, J. Kavalieros, T. Ghani	0
2	The Incredible Shrinking Transistor - Shattering Perceived Barriers and Forging Ahead 2024 ·T. Ghani, P. Ranade	1
3	Comparison of Pregnancy Outcomes between Ongoing Pregnancies after Accidental Misoprostol Use and Normal Pregnancies: A Case-control Study 2023 ·(unknown), (unknown), (unknown), T. Ghani, (unknown)	1
4	The future transistors breakdown → 2023 ·Nature ·Wei Cao, Huiming Bu, M. Vinet, Min Cao, Shinichi Takagi, Sungwoo Hwang, T. Ghani, Kaustav Banerjee	288
5	Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory 2014 ·Applied Physics Letters ·Asif Islam Khan, Dmitri E. Nikonov, Sasikanth Manipatruni, T. Ghani, Ian A. Young	39
6	Proposal of a Spin Torque Majority Gate Logic 2011 ·IEEE Electron Device Letters ·Dmitri E. Nikonov, George I. Bourianoff, T. Ghani	121
7	Nanomagnetic circuits with spin torque majority gates 2011 ·Dmitri E. Nikonov, George I. Bourianoff, T. Ghani	9
8	Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology 2009 ·Sangwoo Pae, T. Ghani, M. Hattendorf, J. Hicks, J. Jopling, J. Maiz, K. Mistry, (unknown), C. Prasad, Jami Wiedemer, Jian Xu	10
9	Future device scaling - Beyond traditional CMOS 2009 ·S. Tyagi, C. Auth, Ibrahim Ban, Peter Chang, R. Chau, T. Ghani, (unknown), J. Kavalieros, Kelin J. Kuhn, J. Maiz, K. Mistry, I. Post	1
10	High performance Hi-K + metal gate strain enhanced transistors on (110) silicon 2008 ·P. Packan, S. Cea, H. Deshpande, T. Ghani, M.D. Giles, O. Golonzka, M. Hattendorf, R. Kotlyar, Kelin J. Kuhn, A. Murthy, P. Ranade, L. Shifren, C. Weber, K. Zawadzki	44
11	Innovations to extend CMOS nano-transistors to the limit 2008 ·T. Ghani	2
12	High performance 35nm L/sub GATE/ CMOS transistors featuring NiSi metal gate (FUSI), uniaxial strained silicon channels and 1.2nm gate oxide 2006 ·P. Ranade, T. Ghani, Kelin J. Kuhn, K. Mistry, Sangwoo Pae, L. Shifren, M. Stettler, K. Tone, S. Tyagi, M. Bohr	10
13	A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors 2004 ·T. Ghani, M Armstrong, C. Auth, M. Bost, P. Charvát, G. Glass, Thomas Hoffmann, Kevin B. Johnson, C. Kenyon, J. W. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, Meredith N. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, Scott E. Thompson, M. Bohr	378
14	Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology 2004 ·K. Mistry, M Armstrong, C. Auth, S. Cea, (unknown), T. Ghani, Thomas Hoffmann, A. Murthy, J. Sandford, R. Shaheed, K. Zawadzki, Kedong Zhang, Scott E. Thompson, M. Bohr	114
15	Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress 2004 ·Applied Physics Letters ·L. Shifren, (unknown), Philippe Matagne, B. Obradovic, C. Auth, S. Cea, T. Ghani, Jianli He, T. Hoffman, R. Kotlyar, Zhenqiang Ma, K. Mistry, Ramune Nagisetty, R. Shaheed, M. Stettler, C. Weber, M.D. Giles	24
16	Understanding stress enhanced performance in Intel 90nm CMOS technology 2004 ·M.D. Giles, M Armstrong, C. Auth, S. Cea, T. Ghani, Thomas Hoffmann, R. Kotlyar, Philippe Matagne, K. Mistry, Ramune Nagisetty, B. Obradovic, R. Shaheed, L. Shifren, M. Stettler, S. Tyagi, (unknown), C. Weber, K. Zawadzki	21
17	A high performance 0.25 μm logic technology optimized for 1.8 V operation 2002 ·M. Bohr, (unknown), (unknown), M. Bost, T. Ghani, (unknown), (unknown), (unknown), P. Packan, S. Sivakumar, Scott E. Thompson, Jeff Tsung‐Hui Tsai, Shengqi Yang	32
18	Source/drain extension scaling for 0.1 μm and below channel length MOSFETs 2002 ·Scott E. Thompson, P. Packan, T. Ghani, M. Stettler, M. Alavi, I. Post, S. Tyagi, (unknown), Shixuan Yang, M. Bohr	28
19	Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs 2001 ·A. Keshavarzi, Shuo Ma, S. Narendra, B. Bloechel, K. Mistry, T. Ghani, Shekhar Borkar, Vivek De	131
20	Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors 1995 ·Journal of Electronic Materials ·T. Ghani, Judy L. Hoyt, (unknown), J. F. Gibbons	12

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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