T. Ghani

7.7k total citations · 1 hit paper
33 papers, 2.3k citations indexed

About

T. Ghani is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Ghani has authored 33 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 7 papers in Biomedical Engineering and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Ghani's work include Advancements in Semiconductor Devices and Circuit Design (24 papers), Semiconductor materials and devices (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). T. Ghani is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (24 papers), Semiconductor materials and devices (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). T. Ghani collaborates with scholars based in United States, South Korea and United Kingdom. T. Ghani's co-authors include M. Bohr, K. Mistry, R. Chau, Scott E. Thompson, Kaizad Mistry, S. Tyagi, A. Murthy, Dmitri E. Nikonov, M Armstrong and C. Auth and has published in prestigious journals such as Nature, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

T. Ghani

30 papers receiving 2.2k citations

Hit Papers

The future transistors 2023 2026 2024 2023 50 100 150 200 250
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. The future transistors
    2023 288 citations Wei Cao, Huiming Bu et al. Nature profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
T. Ghani 2.1k 481 447 359 114 33 2.3k
Digh Hisamoto 3.0k 1.4× 366 0.8× 575 1.3× 297 0.8× 75 0.7× 85 3.1k
Hideki Takeuchi 3.1k 1.5× 468 1.0× 554 1.2× 431 1.2× 61 0.5× 104 3.3k
Naoto Horiguchi 3.5k 1.7× 541 1.1× 590 1.3× 829 2.3× 78 0.7× 393 3.8k
Chenming Hu 1.9k 0.9× 260 0.5× 254 0.6× 242 0.7× 88 0.8× 64 2.0k
Chenming Hu 3.3k 1.6× 551 1.1× 288 0.6× 330 0.9× 221 1.9× 65 3.4k
S. Biesemans 2.4k 1.1× 278 0.6× 326 0.7× 736 2.1× 43 0.4× 171 2.5k
M.D. Giles 1.5k 0.7× 425 0.9× 312 0.7× 387 1.1× 86 0.8× 68 1.8k
Tsu-Jae King 2.5k 1.2× 335 0.7× 449 1.0× 359 1.0× 29 0.3× 48 2.6k
M. Ieong 3.4k 1.6× 508 1.1× 642 1.4× 557 1.6× 140 1.2× 72 3.7k
J. Kavalieros 3.3k 1.6× 688 1.4× 973 2.2× 547 1.5× 45 0.4× 41 3.6k

Countries citing papers authored by T. Ghani

Since Specialization
Citations

This map shows the geographic impact of T. Ghani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ghani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ghani more than expected).

Fields of papers citing papers by T. Ghani

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ghani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ghani. The network helps show where T. Ghani may publish in the future.

Co-authorship network of co-authors of T. Ghani

This figure shows the co-authorship network connecting the top 25 collaborators of T. Ghani. A scholar is included among the top collaborators of T. Ghani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Ghani. T. Ghani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Ghani, T. & P. Ranade. (2024). The Incredible Shrinking Transistor - Shattering Perceived Barriers and Forging Ahead. 1–4. 1 indexed citations
3.
4.
Cao, Wei, Huiming Bu, M. Vinet, et al.. (2023). The future transistors. Nature. 620(7974). 501–515. 288 indexed citations breakdown →
5.
Khan, Asif Islam, Dmitri E. Nikonov, Sasikanth Manipatruni, T. Ghani, & Ian A. Young. (2014). Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory. Applied Physics Letters. 104(26). 39 indexed citations
6.
Nikonov, Dmitri E., George I. Bourianoff, & T. Ghani. (2011). Proposal of a Spin Torque Majority Gate Logic. IEEE Electron Device Letters. 32(8). 1128–1130. 121 indexed citations
7.
Nikonov, Dmitri E., George I. Bourianoff, & T. Ghani. (2011). Nanomagnetic circuits with spin torque majority gates. 1384–1388. 9 indexed citations
8.
Pae, Sangwoo, T. Ghani, M. Hattendorf, et al.. (2009). Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology. 12. 499–504. 10 indexed citations
9.
Ghani, T.. (2008). Innovations to extend CMOS nano-transistors to the limit. 301–302. 2 indexed citations
10.
Packan, P., S. Cea, H. Deshpande, et al.. (2008). High performance Hi-K + metal gate strain enhanced transistors on (110) silicon. 1–4. 44 indexed citations
11.
Bohr, M., R. Chau, T. Ghani, & Kaizad Mistry. (2007). The High-k Solution. IEEE Spectrum. 44(10). 29–35. 281 indexed citations
12.
13.
Thompson, Scott E., R. Chau, T. Ghani, et al.. (2005). In Search of “Forever,” Continued Transistor Scaling One New Material at a Time. IEEE Transactions on Semiconductor Manufacturing. 18(1). 26–36. 117 indexed citations
14.
Ghani, T., M Armstrong, C. Auth, et al.. (2004). A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors. 11.6.1–11.6.3. 378 indexed citations
15.
Mistry, K., M Armstrong, C. Auth, et al.. (2004). Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology. 50–51. 114 indexed citations
16.
Shifren, L., Philippe Matagne, B. Obradovic, et al.. (2004). Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress. Applied Physics Letters. 85(25). 6188–6190. 24 indexed citations
17.
Bohr, M., M. Bost, T. Ghani, et al.. (2002). A high performance 0.25 μm logic technology optimized for 1.8 V operation. 847–850. 32 indexed citations
18.
Thompson, Scott E., P. Packan, T. Ghani, et al.. (2002). Source/drain extension scaling for 0.1 μm and below channel length MOSFETs. 132–133. 28 indexed citations
19.
Keshavarzi, A., Shuo Ma, S. Narendra, et al.. (2001). Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs. 207–212. 131 indexed citations
20.
Ghani, T., et al.. (1995). Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors. Journal of Electronic Materials. 24(8). 999–1002. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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