Ben Kaczer

1.2k citations

25 papers · 938 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Advanced Memory and Neural Computing
- Radiation Effects in Electronics
Hardware and Architecture top 10%

Papers in

Electrical and Electronic Engineering 24
- Semiconductor materials and devices 23
- Advancements in Semiconductor Devices and Circuit Design 16
- Integrated Circuits and Semiconductor Failure Analysis 10
- Ferroelectric and Negative Capacitance Devices 4
- Advanced Memory and Neural Computing 3
- Electrostatic Discharge in Electronics 2
- Radiation Effects in Electronics 2
Hardware and Architecture 1

Co-authors: Tibor Grasser G. Groeseneken R. Degraeve Wolfgang Goes J. Franco Wolfgang Gös Viktor Sverdlov P.-J. Wagner
Journals: Microelectronics Reliability (5 papers)IEEE Transactions on Electron Devices (4 papers)IEEE Transactions on Nuclear Science (2 papers)Lirias (KU Leuven) (6 papers)DSpace - NTUA (National Technical University of Athens) (1 paper)
Partner nations: Belgium Austria United States

In The Last Decade

Ben Kaczer

24 papers receiving 909 citations

Peers

Countries citing papers authored by Ben Kaczer

Since Specialization

Citations

This map shows the geographic impact of Ben Kaczer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ben Kaczer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ben Kaczer more than expected).

Fields of papers citing papers by Ben Kaczer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ben Kaczer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ben Kaczer. The network helps show where Ben Kaczer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Ben Kaczer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ben Kaczer Line = papers co-authored together Ben Kaczer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI G. Lind, YoonJae Lee, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, J. Franco	2024	3
2	Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications Lirias (KU Leuven) ·Yuanxiong Guo, R. Degraeve, Jacqui Ras, Alejandro Dri, J. Franco, Ben Kaczer, E. Bury, Ingrid Verbauwhede	2024	1
3	Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays Lirias (KU Leuven) ·Chioma Udo, Seongmin Byun, J. Diaz-Fortuny, Stanislav Tyaginov, Georges Gielen, E. Bury, Ben Kaczer	2024	1
4	Silent Data Corruption: Test or Reliability Problem? Lirias (KU Leuven) ·Erik Jan Marinissen, Lucy Ding, R. D. Blanton, Ana María Cárdenas Cano, Кирилл Евгеньевич Князев, Shokufeh khanzadeh, Abhay Patel, 寛之渡邊, Ben Kaczer, Christina George, Pieter Weckx, Philippe Roussel, Georges Gielen	2024	0
5	On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment IEEE Transactions on Electron Devices ·Mischa Thesberg, В В Павленко, Lee Hy, Ben Kaczer, Philippe Roussel, Zlatan Stanojević, O. Baumgartner, G. Tamburello, M. Karner, Hans Kosina	2022	8
6	Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery João P. A. Bastos, Barry O’Sullivan, J. Franco, Stanislav Tyaginov, Lee Hy, Adrian Chasin, R. Degraeve, Ben Kaczer, R. Ritzenthaler, E. Capogreco, E. Dentoni Litta, A. Spessot, B.G. Kim, R. S. Iroshnikov, Vladimir Machkaoutsan, P. Fazan, Naoto Horiguchi	2022	4
7	Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors Lirias (KU Leuven) ·Stanislav Tyaginov, Alexander Makarov, Al-Moatasem El-Sayed, YoonJae Lee, E. Bury, Markus Jech, Jacqui Ras, Alexander Grill, A. De Keersgieter, M. I. Vexler, Geert Eneman, Ben Kaczer	2022	6
8	On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors Lirias (KU Leuven) ·Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Jacqui Ras, t Heckrod, M. I. Vexler, Geert Hellings, Ben Kaczer	2022	1
9	A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability Microelectronics Reliability ·Ben Kaczer, J. Franco, Pieter Weckx, Ph. Roussel, V. Putcha, E. Bury, Marko Simicic, Adrian Chasin, D. Linten, Bertrand Parvais, Francky Catthoor, G. Rzepa, Michael Waltl, Tibor Grasser	2018	52
10	Reliability aware simulation flow: From TCAD calibration to circuit level analysis Razaidi Hussin, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov, Louis Gerrer, Patrícia Santos da Silva, Hikaru Oshiro, Liping Wang, Aída Hellín Micol, Pieter Weckx, J. Franco, 川野通夫	2015	4
11	The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps IEEE Transactions on Electron Devices ·Tibor Grasser, Ben Kaczer, Wolfgang Goes, H. Reisinger, Thomas Aichinger, Philipp Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, María Toledano Luque, Michael Nelhiebel	2011	363
12	Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices IEEE Transactions on Electron Devices ·Alessio Griffoni, Shih‐Hung Chen, S. Thijs, Ben Kaczer, J. Franco, Dimitri Linten, A. De Keersgieter, G. Groeseneken	2011	10
13	Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays IEEE Transactions on Nuclear Science ·Alessio Griffoni, Marco Silvestri, Simone Gerardin, Gaudenzio Meneghesso, A. Paccagnella, Ben Kaczer, Muriel de Potter de ten Broeck, Maria Barrdahl, A. Nackaerts	2009	5
14	An energy-level perspective of bias temperature instability Tibor Grasser, Ben Kaczer, Wolfgang Goes	2008	46
15	A rigorous study of measurement techniques for negative bias temperature instability Tibor Grasser, P.-J. Wagner, Philipp Hehenberger, Wolfgang Gös, Ben Kaczer	2007	7
16	Negative bias temperature instability: Recoverable versus permanent degradation Tibor Grasser, Ben Kaczer	2007	23
17	Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability Microelectronics Reliability ·Ben Kaczer, Kammal Asgar, Ph. Roussel, G. Groeseneken	2007	34
18	Impact of Heavy-Ion Strikes on Minimum-Size MOSFETs With Ultra-Thin Gate Oxide IEEE Transactions on Nuclear Science ·Simone Gerardin, Marta Bagatin, Andrea Cester, A. Paccagnella, Ben Kaczer	2006	18
19	Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study Microelectronics Reliability ·Ben Kaczer, R. Degraeve, Mahmoud Rasras, A. De Keersgieter, Pyotr Burkov, G. Groeseneken	2002	35
20	Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction Microelectronics Reliability ·R. Degraeve, Ben Kaczer, G. Groeseneken	1999	150

About Ben Kaczer

Ben Kaczer is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Management Information Systems, Condensed Matter Physics and Materials Chemistry, having authored 25 papers that have together received 938 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Advanced Memory and Neural Computing (3 papers), Semiconductor materials and interfaces (2 papers), Electrostatic Discharge in Electronics (2 papers) and Radiation Effects in Electronics (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (913 citations), Hardware and Architecture (33 citations), Condensed Matter Physics (57 citations), Materials Chemistry (102 citations) and Electronic, Optical and Magnetic Materials (37 citations). Ben Kaczer has collaborated with scholars based in Belgium, Austria and United States. Frequent co-authors include Tibor Grasser, G. Groeseneken, R. Degraeve, Wolfgang Goes, J. Franco, Wolfgang Gös, Viktor Sverdlov, P.-J. Wagner, Philipp Hehenberger and María Toledano Luque. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, Lirias (KU Leuven) and DSpace - NTUA (National Technical University of Athens).

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