Narendra Parihar

1.5k total citations
44 papers, 734 citations indexed

About

Narendra Parihar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Narendra Parihar has authored 44 papers receiving a total of 734 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in Narendra Parihar's work include Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). Narendra Parihar is often cited by papers focused on Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (16 papers). Narendra Parihar collaborates with scholars based in India, United States and Germany. Narendra Parihar's co-authors include Souvik Mahapatra, Nilesh Goel, Subhadeep Mukhopadhyay, Richard G. Southwick, J. H. Stathis, Uma Sharma, Miaomiao Wang, Nilotpal Choudhury, Hussam Amrouch and Hiu Yung Wong and has published in prestigious journals such as ACS Applied Materials & Interfaces, IEEE Transactions on Electron Devices and IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

In The Last Decade

Narendra Parihar

42 papers receiving 727 citations

Peers

Narendra Parihar

EEE

AMPO

EOMM

Nilesh Goel India

C. Caillat Belgium

Christian Schlünder Germany

Zixuan Sun China

D. Takashima Japan

Louis Gerrer United Kingdom

H.-J. Chia Taiwan

Osbert Cheng Taiwan

Gi-Yong Yang South Korea

Edward J. Nowak United States

Nilesh Goel India

Narendra Parihar

863 ×1.2

EEE

41 ×0.8

66 ×1.6

AMPO

45 ×1.3

25 ×1.1

EOMM

Citations per year, relative to Narendra Parihar Narendra Parihar (= 1×) peers Nilesh Goel

Countries citing papers authored by Narendra Parihar

Since Specialization

Citations

This map shows the geographic impact of Narendra Parihar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Narendra Parihar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Narendra Parihar more than expected).

Fields of papers citing papers by Narendra Parihar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Narendra Parihar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Narendra Parihar. The network helps show where Narendra Parihar may publish in the future.

Co-authorship network of co-authors of Narendra Parihar

This figure shows the co-authorship network connecting the top 25 collaborators of Narendra Parihar. A scholar is included among the top collaborators of Narendra Parihar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Narendra Parihar. Narendra Parihar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Mahapatra, Souvik, et al.. (2023). A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB. IEEE Transactions on Electron Devices. 71(1). 114–125. 22 indexed citations

Choudhury, Nilotpal, et al.. (2021). A Physical Model for Bulk Gate Insulator Trap Generation During Bias-Temperature Stress in Differently Processed p-Channel FETs. IEEE Transactions on Electron Devices. 68(2). 485–490. 11 indexed citations

Hiblot, Gaspard, Narendra Parihar, Emmanuel Dupuy, et al.. (2021). Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices. IEEE Transactions on Device and Materials Reliability. 21(2). 192–198. 1 indexed citations

Mahapatra, Souvik & Narendra Parihar. (2020). Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence. IEEE Transactions on Device and Materials Reliability. 20(1). 4–23. 33 indexed citations

Parihar, Narendra, et al.. (2020). A Stochastic Framework for the Time Kinetics of Interface and Bulk Oxide Traps for BTI, SILC, and TDDB in MOSFETs. IEEE Transactions on Electron Devices. 67(11). 4741–4748. 14 indexed citations

Choudhury, Nilotpal, et al.. (2020). Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs. IEEE Journal of the Electron Devices Society. 8. 1281–1288. 11 indexed citations

Choudhury, Nilotpal, et al.. (2020). A Model for Hole Trapping-Detrapping Kinetics During NBTI in p-Channel FETs: (Invited paper). 1–4. 3 indexed citations

Sharma, Uma, Narendra Parihar, & Souvik Mahapatra. (2019). Modeling of HCD Kinetics for Full ${V}_{{G}}$ /${V}_{{D}}$ Span in the Presence of NBTI, Electron Trapping, and Self Heating in RMG SiGe p-FinFETs. IEEE Transactions on Electron Devices. 66(6). 2502–2508. 21 indexed citations

Santen, Victor M. van, et al.. (2019). Modeling the Interdependences Between Voltage Fluctuation and BTI Aging. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27(7). 1652–1665. 11 indexed citations

10.

Parihar, Narendra, et al.. (2019). A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling. IEEE Transactions on Electron Devices. 66(5). 2093–2099. 15 indexed citations

11.

Parihar, Narendra, et al.. (2019). A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact. IEEE Transactions on Electron Devices. 66(5). 2086–2092. 32 indexed citations

12.

Parihar, Narendra, et al.. (2019). A Comparative Analysis of NBTI Variability and TDDS in GF HKMG Planar p-MOSFETs and RMG HKMG p-FinFETs. IEEE Transactions on Electron Devices. 66(8). 3273–3278. 6 indexed citations

13.

Parihar, Narendra, Richard G. Southwick, Miaomiao Wang, J. H. Stathis, & Souvik Mahapatra. (2018). Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETs—Part-II: AC Stress and Recovery. IEEE Transactions on Electron Devices. 65(5). 1707–1713. 13 indexed citations

14.

Joishi, Chandan, Sayantan Ghosh, Narendra Parihar, et al.. (2018). Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al₂O₃ and GeO_{<italic>x</italic>} ILs Using Ultrafast Charge Trap–Detrap Techniques. IEEE Transactions on Electron Devices. 65(10). 4245–4253. 4 indexed citations

15.

Parihar, Narendra, Richard G. Southwick, Miaomiao Wang, J. H. Stathis, & Souvik Mahapatra. (2018). Modeling of NBTI Kinetics in RMG Si and SiGe FinFETs, Part-I: DC Stress and Recovery. IEEE Transactions on Electron Devices. 65(5). 1699–1706. 32 indexed citations

16.

Amrouch, Hussam, Nilesh Goel, Narendra Parihar, et al.. (2018). Device to Circuit Framework for Activity-Dependent NBTI Aging in Digital Circuits. IEEE Transactions on Electron Devices. 66(1). 316–323. 26 indexed citations

17.

Parihar, Narendra, Uma Sharma, Richard G. Southwick, et al.. (2017). Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions. IEEE Transactions on Electron Devices. 65(1). 23–30. 51 indexed citations

18.

Parihar, Narendra, et al.. (2017). Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs. XT–1.1. 25 indexed citations

19.

Mahapatra, Souvik, et al.. (2017). A BTI analysis tool (BAT) to simulate p-MOSFET ageing under diverse experimental conditions. 111–113. 2 indexed citations

20.

Wong, Hiu Yung, et al.. (2017). Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials. 6A–3.1. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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