Davide Bisi

2.3k citations

51 papers · 1.8k indexed · 1 hit paper · h-index 20

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 48
- GaN-based semiconductor devices and materials 48
Electrical and Electronic Engineering 47
- Semiconductor materials and devices 42
- Silicon Carbide Semiconductor Technologies 17
- Advancements in Semiconductor Devices and Circuit Design 8
- Radio Frequency Integrated Circuit Design 2

Co-authors: Enrico Zanoni Matteo Meneghini Gaudenzio Meneghesso Isabella Rossetto M. Van Hove Stefaan Decoutere Steve Stoffels Alessandro Chini
Journals: IEEE Electron Device Letters (6 papers)Microelectronics Reliability (5 papers)IEEE Transactions on Electron Devices (4 papers)Applied Physics Letters (2 papers)Semiconductor Science and Technology (2 papers)
Partner nations: Italy United States Belgium

In The Last Decade

Davide Bisi

50 papers receiving 1.7k citations

Hit Papers

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Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 2013 · 343 citations

Peers

Countries citing papers authored by Davide Bisi

Since Specialization

Citations

This map shows the geographic impact of Davide Bisi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Davide Bisi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Davide Bisi more than expected).

Fields of papers citing papers by Davide Bisi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Davide Bisi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Davide Bisi. The network helps show where Davide Bisi may publish in the future.

Co-authors

The 25 scholars most cited alongside Davide Bisi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Davide Bisi Line = papers co-authored together Davide Bisi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects Research Padua Archive (University of Padua) ·Tian Wu, Armytha Alistair, H. De Freitas, Gracia Aída Herrera González, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, S. Keller, Umesh K. Mishra	2024	1
2	The Future of GaN is Also High Voltage, High Current, and Bidirectional: (Invited) U. K. Mishra, Davide Bisi, Geetak Gupta, Carl J. Neufeld, P. Parikh	2024	1
3	Observation of I_D-V_D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures IEEE Electron Device Letters ·Davide Bisi, Steven Wienecke, Brian Romanczyk, Haoran Li, Elaheh Ahmadi, S. Keller, Matthew Guidry, Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, Umesh K. Mishra, Enrico Zanoni	2020	22
4	Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs IEEE Electron Device Letters ·Davide Bisi, Carlo De Santi, Matteo Meneghini, Steven Wienecke, P. Chesta, Haoran Li, Elaheh Ahmadi, S. Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Enrico Zanoni	2018	28
5	Instability of Dynamic- $R_{\text ON}$ and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors IEEE Transactions on Electron Devices ·Maria Ruzzarin, Matteo Meneghini, Davide Bisi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni	2017	25
6	Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN Journal of Applied Physics ·Silvia H. Chan, Davide Bisi, 祐司寺田, Ramya Yeluri, 양찬희, S. Keller, Steven P. DenBaars, Matteo Meneghini, Umesh K. Mishra	2017	4
7	On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors Applied Physics Letters ·Davide Bisi, Silvia H. Chan, Xia-Ji Liu, Ramya Yeluri, S. Keller, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra	2016	48
8	Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs Gaudenzio Meneghesso, Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Enrico Zanoni	2016	7
9	Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate Microelectronics Reliability ·Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian‐Li Wu, M. Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni	2015	39
10	Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs Microelectronics Reliability ·Isabella Rossetto, Matteo Meneghini, Davide Bisi, Kenzo Inagaki, M. Van Hove, Denis Marcon, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2015	12
11	Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors Padua Research Archive (University of Padova) ·Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, P. Vanmeerbeek, Abhishek Banerjee, P. Moens	2015	4
12	Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design IEEE Electron Device Letters ·Davide Bisi, Alessandro Chini, Jerry Grondin, Antonio Stocco, Matteo Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, Piero Gamarra, C. Lacam, M. Tordjman, M.A. diForte-Poisson, Gaudenzio Meneghesso, Enrico Zanoni	2015	43
13	Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Matteo Meneghini, Davide Bisi, Isabella Rossetto, Carlo De Santi, Antonio Stocco, Oliver Hilt, Eldad Bahat‐Treidel, Joachim Wuerfl, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni	2015	1
14	Characterization of Charge Trapping Phenomena in GaN-based HEMTs Padua@research (University of Padova) ·Davide Bisi	2015	4
15	Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons Applied Physics Letters ·Matteo Meneghini, Davide Bisi, Denis Marcon, Steve Stoffels, M. Van Hove, Tian‐Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni	2014	62
16	Proton induced trapping effect on space compatible GaN HEMTs Microelectronics Reliability ·Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, 孙志彪, Matteo Meneghini, Gaudenzio Meneghesso, Fang Ti-jun, Benoît Lambert, H. Blanck, Enrico Zanoni	2014	18
17	Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics Solid-State Electronics ·Tian‐Li Wu, Denis Marcon, N. Ronchi, Benoit Bakeroot, Shuzhen You, Steve Stoffels, M. Van Hove, Davide Bisi, Matteo Meneghini, G. Groeseneken, Stefaan Decoutere	2014	14
18	Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors Davide Bisi, Matteo Meneghini, Antonio Stocco, Giannantonio Cibin, A. Pantellini, A. Nanni, C. Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso	2013	9
19	Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements IEEE Transactions on Electron Devices ·Davide Bisi, Matteo Meneghini, Carlo De Santi, Alessandro Chini, Michael Dammann, Peter Brückner, M. Mikulla, Gaudenzio Meneghesso, Enrico Zanoni Hit paper breakdown →	2013	343
20	[The onset of double metachronous neoplasms 29 years after the diagnosis of Hodgkin's disease]. PubMed ·Davide Bisi, Mario Federico, Mario Sarti, Franco Barbieri, G Curci	1989	0

About Davide Bisi

Davide Bisi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 51 papers that have together received 1.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (48 papers), Semiconductor materials and devices (42 papers), Silicon Carbide Semiconductor Technologies (17 papers), Ga2O3 and related materials (11 papers), Semiconductor Quantum Structures and Devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), ZnO doping and properties (4 papers) and Radio Frequency Integrated Circuit Design (2 papers). The work is most often cited by research in Condensed Matter Physics (1.7k citations), Electronic, Optical and Magnetic Materials (596 citations), Electrical and Electronic Engineering (1.5k citations), Atomic and Molecular Physics, and Optics (411 citations) and Materials Chemistry (267 citations). Davide Bisi has collaborated with scholars based in Italy, United States and Belgium. Frequent co-authors include Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Isabella Rossetto, M. Van Hove, Stefaan Decoutere, Steve Stoffels, Alessandro Chini, Denis Marcon and Carlo De Santi. Their work appears in journals such as IEEE Electron Device Letters, Microelectronics Reliability, IEEE Transactions on Electron Devices, Applied Physics Letters and Semiconductor Science and Technology.

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