Oliver Hilt

3.4k total citations
114 papers, 2.8k citations indexed

About

Oliver Hilt is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Oliver Hilt has authored 114 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 90 papers in Condensed Matter Physics, 86 papers in Electrical and Electronic Engineering and 36 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Oliver Hilt's work include GaN-based semiconductor devices and materials (89 papers), Silicon Carbide Semiconductor Technologies (59 papers) and Semiconductor materials and devices (45 papers). Oliver Hilt is often cited by papers focused on GaN-based semiconductor devices and materials (89 papers), Silicon Carbide Semiconductor Technologies (59 papers) and Semiconductor materials and devices (45 papers). Oliver Hilt collaborates with scholars based in Germany, Italy and Austria. Oliver Hilt's co-authors include Joachim Würfl, Eldad Bahat‐Treidel, Frank Brunner, G. Tränkle, Nando Kaminski, A. Knauer, Joachim Wuerfl, Gaudenzio Meneghesso, Rimma Zhytnytska and Matteo Meneghini and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Oliver Hilt

103 papers receiving 2.7k citations

Peers

Oliver Hilt

CMP

EEE

EOMM

AMPO

Dunjun Chen China

Yasufumi Fujiwara Japan

Youdou Zheng China

H. Kalisch Germany

Leonid Chernyak United States

S. Ravi India

Ding‐Fu Shao China

A. Bonanni Austria

B. Luo United States

Andrei Vescan Germany

Dunjun Chen China

Oliver Hilt

1.5k ×0.7

CMP

1.1k ×0.5

EEE

1.2k ×1.0

EOMM

853 ×1.4

377 ×0.8

AMPO

Citations per year, relative to Oliver Hilt Oliver Hilt (= 1×) peers Dunjun Chen

Countries citing papers authored by Oliver Hilt

Since Specialization

Citations

This map shows the geographic impact of Oliver Hilt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Oliver Hilt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Oliver Hilt more than expected).

Fields of papers citing papers by Oliver Hilt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Oliver Hilt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Oliver Hilt. The network helps show where Oliver Hilt may publish in the future.

Co-authorship network of co-authors of Oliver Hilt

This figure shows the co-authorship network connecting the top 25 collaborators of Oliver Hilt. A scholar is included among the top collaborators of Oliver Hilt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Oliver Hilt. Oliver Hilt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Tetzner, Kornelius, et al.. (2025). All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates. Applied Physics Letters. 126(6). 1 indexed citations

Tetzner, Kornelius, et al.. (2025). Lateral Rutile GeO ₂ MOSFET Devices on Single-Crystal r-GeO ₂ Substrates. IEEE Electron Device Letters. 47(3). 566–569.

Bahat‐Treidel, Eldad, Frank Brunner, Anna Mogilatenko, et al.. (2025). Plasma enhanced atomic layer deposition of HfO2—A potential gate dielectric for GaN-based devices. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 43(4).

Danylyuk, Serhiy, et al.. (2025). Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes. IEEE Electron Device Letters. 46(4). 564–567.

Thies, Andreas, et al.. (2024). Low-resistive gate module for RF GaN-HFETs by electroplating. Semiconductor Science and Technology. 39(2). 25007–25007.

Hilt, Oliver, et al.. (2024). Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag. physica status solidi (a). 222(8). 3 indexed citations

Bahat‐Treidel, Eldad, Paul Plate, Frank Brunner, et al.. (2024). Investigation of atomic layer deposition methods of Al2O3 on n-GaN. Journal of Applied Physics. 135(8). 6 indexed citations

Brunner, Frank, et al.. (2024). Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration. IEEE Transactions on Power Electronics. 39(10). 12615–12624. 2 indexed citations

Chou, Ta‐Shun, Hartwin Peelaers, Kornelius Tetzner, et al.. (2024). Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga₂O₃ Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices. Advanced Electronic Materials. 11(1).

10.

Brunner, F., et al.. (2024). Si-implantation for low ohmic contact resistances in RF GaN HEMTs. Semiconductor Science and Technology. 39(10). 105003–105003. 2 indexed citations

11.

Brunner, Frank, et al.. (2024). GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices. physica status solidi (RRL) - Rapid Research Letters. 18(11). 3 indexed citations

12.

Brunner, Frank, et al.. (2024). K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm⁻¹ Extrinsic Transconductance. physica status solidi (a). 222(3).

13.

Zagni, Nicolò, G. Verzellesi, Carlo De Santi, et al.. (2023). Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al₂O₃/GaN MOS Capacitors. IEEE Transactions on Electron Devices. 71(3). 1561–1566. 8 indexed citations

14.

Tetzner, Kornelius, Andreas Thies, Ta‐Shun Chou, et al.. (2023). Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(4). 8 indexed citations

15.

Meneghini, Matteo, Oliver Hilt, Joachim Wuerfl, & Gaudenzio Meneghesso. (2017). Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate. Energies. 10(2). 153–153. 121 indexed citations

16.

Rossetto, Isabella, Matteo Meneghini, Oliver Hilt, et al.. (2016). Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate. IEEE Transactions on Electron Devices. 63(6). 2334–2339. 132 indexed citations

17.

Würfl, Joachim, Oliver Hilt, Eldad Bahat‐Treidel, et al.. (2013). Enabling GaN high speed devices: Microwave meets power electronics - And vice versa. European Microwave Integrated Circuit Conference. 176–179. 3 indexed citations

18.

Kaminski, Nando & Oliver Hilt. (2012). SiC and GaN Devices - Competition or Coexistence?. 1–11. 44 indexed citations

19.

Hilt, Oliver, A. Knauer, Frank Brunner, Eldad Bahat‐Treidel, & Joachim Würfl. (2010). Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer. 1–4. 47 indexed citations

20.

Hilt, Oliver, A. Knauer, Frank Brunner, Eldad Bahat‐Treidel, & Joachim Würfl. (2010). Normally-off AlGaN/GaN HFET with p-type Ga Gate and AlGaN buffer. 347–350. 62 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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