Tsutomu Uesugi

1.6k citations

59 papers · 1.3k indexed · h-index 21

Condensed Matter Physics top 1%
Electrical and Electronic Engineering top 5%
Electronic, Optical and Magnetic Materials top 5%
Materials Chemistry
Atomic and Molecular Physics, and Optics top 10%

Co-authors: Tetsu Kachi Masakazu Kanechika Tetsuo Narita Hiroyuki Ueda M. Sugimoto Jun Suda Masahito Kodama Narumasa Soejima
Topics: GaN-based semiconductor devices and materials (48 papers)Semiconductor materials and devices (36 papers)Silicon Carbide Semiconductor Technologies (31 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics Scientific Reports
Partner nations: Japan Switzerland Poland

In The Last Decade

Tsutomu Uesugi

58 papers receiving 1.3k citations

Peers

Countries citing papers authored by Tsutomu Uesugi

Since Specialization

Citations

This map shows the geographic impact of Tsutomu Uesugi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tsutomu Uesugi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tsutomu Uesugi more than expected).

Fields of papers citing papers by Tsutomu Uesugi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tsutomu Uesugi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tsutomu Uesugi. The network helps show where Tsutomu Uesugi may publish in the future.

Co-authorship network of co-authors of Tsutomu Uesugi

This figure shows the co-authorship network connecting the top 25 collaborators of Tsutomu Uesugi. A scholar is included among the top collaborators of Tsutomu Uesugi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tsutomu Uesugi. Tsutomu Uesugi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Vertical GaN Junction Barrier Schottky Diodes Fabricated by Using Channeled Implantation of Mg Ions and Ultrahigh-Pressure Annealing 2025 ·IEEE Transactions on Electron Devices ·(unknown),(unknown),Tsutomu Uesugi,Masahiro Horita,Tetsu Kachi,Jun Suda	1
2	Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation 2023 ·Japanese Journal of Applied Physics ·(unknown),(unknown),Tetsuo Narita,Tsutomu Uesugi,Michał Boćkowski,Jun Suda,Tetsu Kachi	4
3	Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions 2023 ·Applied Physics Letters ·Tetsuo Narita,Masakazu Kanechika,Kazuyoshi Tomita,(unknown),Takeshi Kondo,Tsutomu Uesugi,(unknown),Masayoshi Kosaki,Tohru OKA,Jun Suda	4
4	Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited) 2023 ·Tetsuo Narita,Daigo Kikuta,(unknown),T. Shoji,Tomohiko Mori,S. Yamaguchi,(unknown),Kazuyoshi Tomita,Masakazu Kanechika,Takeshi Kondo,Tsutomu Uesugi,Jun Kojima,Jun Suda,(unknown),(unknown),H. Watanabe,Masayoshi Kosaki,Tohru OKA	2
5	Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage 2022 ·Applied Physics Letters ·(unknown),(unknown),Tetsuo Narita,Tsutomu Uesugi,Jun Suda,Tetsu Kachi	21
6	Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress 2022 ·Scientific Reports ·Tetsuo Narita,Masakazu Kanechika,Jun Kojima,H. Watanabe,Takeshi Kondo,Tsutomu Uesugi,S. Yamaguchi,(unknown),Kazuyoshi Tomita,(unknown),(unknown),Masayoshi Kosaki,Tohru OKA,Jun Suda	21
7	Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings 2021 ·Applied Physics Express ·(unknown),Takashi Ishida,(unknown),Hideki Sakurai,Keita Kataoka,Tetsuo Narita,Tsutomu Uesugi,Michał Boćkowski,Tomoaki Nishimura,Jun Suda,Tetsu Kachi	28
8	Mg-implanted bevel edge termination structure for GaN power device applications 2021 ·Applied Physics Letters ·(unknown),Takashi Ishida,(unknown),Hideki Sakurai,Tetsuo Narita,Tsutomu Uesugi,Michał Boćkowski,Jun Suda,Tetsu Kachi	27
9	Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions 2021 ·Applied Physics Express ·T. Shoji,Tetsuo Narita,(unknown),Masakazu Kanechika,Takeshi Kondo,Tsutomu Uesugi,Kazuyoshi Tomita,(unknown),Tomohiko Mori,S. Yamaguchi,(unknown),Jun Kojima,Jun Suda	15
10	Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress 2021 ·Applied Physics Letters ·Tetsuo Narita,(unknown),Masakazu Kanechika,Takeshi Kondo,Tsutomu Uesugi,Kazuyoshi Tomita,(unknown),S. Yamaguchi,(unknown),Masayoshi Kosaki,Tohru OKA,Jun Kojima,Jun Suda	17
11	Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination 2019 ·IEEE Electron Device Letters ·Takuya Maeda,Tetsuo Narita,Hiroyuki Ueda,Masakazu Kanechika,Tsutomu Uesugi,Tetsu Kachi,Tsunenobu Kimoto,Masahiro Horita,Jun Suda	96
12	Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination 2019 ·Applied Physics Letters ·Takuya Maeda,Tetsuo Narita,Hiroyuki Ueda,Masakazu Kanechika,Tsutomu Uesugi,Tetsu Kachi,Tsunenobu Kimoto,Masahiro Horita,Jun Suda	19
13	P-type doping of GaN by magnesium ion implantation 2016 ·Applied Physics Express ·Tetsuo Narita,Tetsu Kachi,Keita Kataoka,Tsutomu Uesugi	89
14	Evaluation of GaN Substrate for Vertical GaN Power Device Applications 2013 ·Sensors and Materials ·Tetsu Kachi,Tsutomu Uesugi,(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),(unknown)	10
15	As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN 2012 ·Journal of Applied Physics ·Shang Chen,(unknown),(unknown),(unknown),Yutaka Tokuda,Kenji Ishikawa,(unknown),Hiroyuki Ueda,Tsutomu Uesugi,Tetsu Kachi	44
16	Design and simulations of novel enhancement‐mode high‐voltage GaN vertical hybrid MOS‐HEMTs 2010 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Zhongda Li,Kailin Tang,T. Paul Chow,M. Sugimoto,Tsutomu Uesugi,Tetsu Kachi	4
17	A Study of MIS-AlGaN/GaN HEMTs with SiO_2 Films as Gate Insulator 2005 ·M. Sugimoto,Masahito Kodama,Narumasa Soejima,(unknown),Tsutomu Uesugi,Tetsu Kachi	1
18	A skew-tolerant design scheme for over 1-GHz LSIs 2000 ·European Solid-State Circuits Conference ·Yoshihisa Hagihara,(unknown),Atsushi Yoshikawa,Tsutomu Uesugi,(unknown),(unknown),Makoto Ikeda,Masashi Okada,Shinichi Yamada	3
19	Temperature Characteristics of Lateral Power MOS FET Formed by Solid Phase Epitaxy 1998 ·IEICE Transactions on Electronics ·Masahito Kodama,Tsutomu Uesugi	1
20	Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma 1998 ·Japanese Journal of Applied Physics ·(unknown),Takashi Suzuki,Tsutomu Uesugi,(unknown)	12

About Tsutomu Uesugi

Tsutomu Uesugi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 59 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (48 papers), Semiconductor materials and devices (36 papers) and Silicon Carbide Semiconductor Technologies (31 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (491 citations) and Electrical and Electronic Engineering (1.1k citations). Tsutomu Uesugi has collaborated with scholars based in Japan, Switzerland and Poland. Frequent co-authors include Tetsu Kachi, Masakazu Kanechika, Tetsuo Narita, Hiroyuki Ueda, M. Sugimoto, Jun Suda, Masahito Kodama, Narumasa Soejima, Osamu Ishiguro and Keita Kataoka. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact