Matthew Guidry

1.5k total citations
57 papers, 1.2k citations indexed

About

Matthew Guidry is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Matthew Guidry has authored 57 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Condensed Matter Physics, 53 papers in Electrical and Electronic Engineering and 22 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Matthew Guidry's work include GaN-based semiconductor devices and materials (56 papers), Radio Frequency Integrated Circuit Design (37 papers) and Semiconductor Quantum Structures and Devices (20 papers). Matthew Guidry is often cited by papers focused on GaN-based semiconductor devices and materials (56 papers), Radio Frequency Integrated Circuit Design (37 papers) and Semiconductor Quantum Structures and Devices (20 papers). Matthew Guidry collaborates with scholars based in United States, Italy and Germany. Matthew Guidry's co-authors include Umesh K. Mishra, S. Keller, Brian Romanczyk, Xun Zheng, Elaheh Ahmadi, Steven Wienecke, Haoran Li, Nirupam Hatui, Christian Wurm and Karine Hestroffer and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

Matthew Guidry

55 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Matthew Guidry United States 20 1.1k 831 474 341 256 57 1.2k
Brian Romanczyk United States 20 1.1k 1.0× 894 1.1× 482 1.0× 373 1.1× 282 1.1× 58 1.3k
Minhan Mi China 19 936 0.8× 745 0.9× 430 0.9× 225 0.7× 181 0.7× 91 991
Masahiko Kuraguchi Japan 14 1.3k 1.2× 1.1k 1.3× 610 1.3× 255 0.7× 268 1.0× 30 1.4k
Hirokuni Tokuda Japan 17 931 0.8× 750 0.9× 553 1.2× 187 0.5× 255 1.0× 71 1.1k
Yoshiharu Takada Japan 14 1.3k 1.2× 1.1k 1.4× 599 1.3× 265 0.8× 266 1.0× 32 1.4k
Yi Pei United States 20 1.1k 1.0× 883 1.1× 448 0.9× 290 0.9× 230 0.9× 57 1.2k
Steven Wienecke United States 16 697 0.6× 508 0.6× 300 0.6× 210 0.6× 182 0.7× 28 758
D. Buttari United States 18 1.3k 1.2× 990 1.2× 625 1.3× 398 1.2× 360 1.4× 39 1.5k
L. Kehias United States 10 948 0.8× 823 1.0× 337 0.7× 288 0.8× 189 0.7× 22 1.1k
A.P. Zhang United States 8 693 0.6× 549 0.7× 272 0.6× 253 0.7× 197 0.8× 12 791

Countries citing papers authored by Matthew Guidry

Since Specialization
Citations

This map shows the geographic impact of Matthew Guidry's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matthew Guidry with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matthew Guidry more than expected).

Fields of papers citing papers by Matthew Guidry

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matthew Guidry. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matthew Guidry. The network helps show where Matthew Guidry may publish in the future.

Co-authorship network of co-authors of Matthew Guidry

This figure shows the co-authorship network connecting the top 25 collaborators of Matthew Guidry. A scholar is included among the top collaborators of Matthew Guidry based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Matthew Guidry. Matthew Guidry is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Khan, Kamruzzaman, Tanmay Chavan, Weiyi Li, et al.. (2025). Recent Advancements in N-polar GaN HEMT Technology. Crystals. 15(9). 830–830.
2.
Rampazzo, Fabiana, Carlo De Santi, Gaudenzio Meneghesso, et al.. (2024). Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. Research Padua Archive (University of Padua). 5B.2–1. 1 indexed citations
3.
Medjdoub, Farid, K. Shinohara, Fabian Thome, et al.. (2024). Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications. IEEE Microwave Magazine. 25(10). 18–37. 7 indexed citations
4.
Li, Weiyi, Wenjian Liu, Tanmay Chavan, et al.. (2024). Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz. IEEE Microwave and Wireless Technology Letters. 34(2). 183–186. 10 indexed citations
5.
Li, Weiyi, Matthew Guidry, Brian Romanczyk, et al.. (2024). Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz. IEEE Microwave and Wireless Technology Letters. 34(4). 395–398. 9 indexed citations
6.
Hatui, Nirupam, et al.. (2024). N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated Pout at 94 GHz. IEEE Microwave and Wireless Technology Letters. 34(7). 907–910. 10 indexed citations
7.
Li, Weiyi, Matthew Guidry, Brian Romanczyk, et al.. (2023). First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz. IEEE Microwave and Wireless Technology Letters. 33(6). 683–686. 20 indexed citations
8.
Li, Weiyi, Brian Romanczyk, Matthew Guidry, et al.. (2023). Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs. IEEE Transactions on Electron Devices. 70(4). 2075–2080. 41 indexed citations
9.
Liu, Wenjian, Brian Romanczyk, Matthew Guidry, et al.. (2021). 6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates. IEEE Microwave and Wireless Components Letters. 31(6). 748–751. 43 indexed citations
10.
Santi, Carlo De, Fabiana Rampazzo, Xun Zheng, et al.. (2021). Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. Research Padua Archive (University of Padua). 1–2. 5 indexed citations
11.
Guidry, Matthew, Brian Romanczyk, Nirupam Hatui, et al.. (2020). A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. 1–2. 7 indexed citations
12.
Liu, Wenjian, Brian Romanczyk, Nirupam Hatui, et al.. (2020). Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current. IEEE Electron Device Letters. 41(10). 1468–1471. 8 indexed citations
13.
Bisi, Davide, Steven Wienecke, Brian Romanczyk, et al.. (2020). Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures. IEEE Electron Device Letters. 41(3). 345–348. 22 indexed citations
14.
Koksaldi, Onur S., Brian Romanczyk, Matthew Guidry, et al.. (2020). High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications. Semiconductor Science and Technology. 35(12). 124004–124004. 3 indexed citations
15.
Li, Weiyi, Shubhra S. Pasayat, Matthew Guidry, et al.. (2020). First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel. Semiconductor Science and Technology. 35(7). 75007–75007. 11 indexed citations
16.
Romanczyk, Brian, Matthew Guidry, Xun Zheng, et al.. (2020). Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs. IEEE Transactions on Electron Devices. 67(4). 1542–1546. 25 indexed citations
17.
Pasayat, Shubhra S., Elaheh Ahmadi, Brian Romanczyk, et al.. (2019). First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE. Semiconductor Science and Technology. 34(4). 45009–45009. 20 indexed citations
18.
Liu, Wenjian, Silvia H. Chan, Chirag Gupta, et al.. (2019). Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN. Applied Physics Letters. 115(3). 16 indexed citations
19.
Romanczyk, Brian, Steven Wienecke, Matthew Guidry, et al.. (2017). Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs. IEEE Transactions on Electron Devices. 65(1). 45–50. 174 indexed citations
20.
Lu, Jing, Xun Zheng, Matthew Guidry, et al.. (2014). Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors. Applied Physics Letters. 104(9). 92107–92107. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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