M.A. diForte-Poisson

728 citations

20 papers · 546 indexed · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena

Papers in

Condensed Matter Physics 15
- GaN-based semiconductor devices and materials 15
Atomic and Molecular Physics, and Optics 13
- Semiconductor Quantum Structures and Devices 13
- Semiconductor materials and interfaces 2

Co-authors: S.L. Delage N. Grandjean M. Alomari E. Kohn C. Dua David Maier Christophe Gaquière P. Pfeffer
Journals: IEEE Electron Device Letters (2 papers)Electronics Letters (2 papers)Journal of Applied Physics (2 papers)IEEE Transactions on Device and Materials Reliability (1 paper)Semiconductor Science and Technology (1 paper)
Partner nations: France Germany Switzerland

In The Last Decade

M.A. diForte-Poisson

19 papers receiving 524 citations

Peers

Countries citing papers authored by M.A. diForte-Poisson

Since Specialization

Citations

This map shows the geographic impact of M.A. diForte-Poisson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.A. diForte-Poisson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.A. diForte-Poisson more than expected).

Fields of papers citing papers by M.A. diForte-Poisson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.A. diForte-Poisson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.A. diForte-Poisson. The network helps show where M.A. diForte-Poisson may publish in the future.

Co-authors

The 25 scholars most cited alongside M.A. diForte-Poisson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M.A. diForte-Poisson Line = papers co-authored together M.A. diForte-Poisson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design IEEE Electron Device Letters ·Davide Bisi, Alessandro Chini, Jerry Grondin, Antonio Stocco, Matteo Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, Piero Gamarra, C. Lacam, M. Tordjman, M.A. diForte-Poisson, Gaudenzio Meneghesso, Enrico Zanoni	2015	43
2	InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment IEEE Electron Device Letters ·David Maier, M. Alomari, N. Grandjean, J.‐F. Carlin, M.A. diForte-Poisson, C. Dua, S.L. Delage, E. Kohn	2012	91
3	Diamond overgrown InAlN/GaN HEMT Diamond and Related Materials ·M. Alomari, Michele Dipalo, Stefano Rossi, M.A. diForte-Poisson, S.L. Delage, J.‐F. Carlin, N. Grandjean, Christophe Gaquière, Lajos Tóth, B. Pécz, E. Kohn	2011	57
4	Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes Journal of Applied Physics ·D. Donoval, Aleš Chvála, F. Venosta, Jaroslav Kováč, E. Morvan, J Reinosa, M.A. diForte-Poisson, P. Kordoš	2011	34
5	Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements Applied Physics Letters ·Jaroslav Kováč, F. Venosta, Aleš Chvála, Сергей Павлович Щавелев, E. Morvan, M.A. diForte-Poisson, D. Donoval, P. Kordoš	2011	7
6	THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors Acta Physica Polonica A ·Kausik S. Das, A. El Fatimy, Yahya Moubarak Meziani, Dominique Coquillat, W. Knap, F. Teppe, Tenorio Sánchez, M.A. diForte-Poisson, C. Dua, S. Piotrowicz, E. Morvan, S.L. Delage	2011	2
7	High temperature stability of nitride-based power HEMTs OPen Access Repositorium der Universität Ulm (OPARU) (Ulm University) ·David Maier, M. Alomari, E. Kohn, M.A. diForte-Poisson, C. Dua, S.L. Delage, N. Grandjean, J.‐F. Carlin, Andrey Chuvilin, Ute Kaiser, David Troadec, Christophe Gaquière	2010	2
8	Testing the Temperature Limits of GaN-Based HEMT Devices IEEE Transactions on Device and Materials Reliability ·David Maier, M. Alomari, N. Grandjean, Najihah Mohd Tamyis, M.A. diForte-Poisson, C. Dua, Andrey Chuvilin, David Troadec, Christophe Gaquière, Ute Kaiser, Marcos Tim�n, E. Kohn	2010	129
9	Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band S. Piotrowicz, Guan You-li, E. Chartier, J. Jacquet, Olivier Jardel, Fang Bin, 潘绣文, E. Morvan, R. Aubry, C. Dua, M. Oualli, Laert Guerra Werneck, N. Sarazin, M.A. diForte-Poisson, Jacques A. Delaire, Adriana Araujo Assunção, S.L. Delage	2009	5
10	Temperature measurement in AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy The European Physical Journal Applied Physics ·R. Aubry, C. Dua, J. Jacquet, Gertrude S. Kimball, Pierre Galtier, Luis Omar Masías Ambríz, Y. Cordier, M.A. diForte-Poisson, S.L. Delage	2005	11
11	Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors The European Physical Journal Applied Physics ·R. Aubry, C. Dua, J. Jacquet, Gertrude S. Kimball, Pierre Galtier, Luis Omar Masías Ambríz, Y. Cordier, M.A. diForte-Poisson, S.L. Delage	2004	5
12	Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements The European Physical Journal Applied Physics ·R. Aubry, J. Jacquet, Luis Omar Masías Ambríz, E. Chartier, Scott Tenaglia, Y. Cordier, F. Sèmond, J. Massies, M.A. diForte-Poisson, Albert Romann, S.L. Delage	2003	10
13	High efficiency InGaP/GaAs HBT power amplifiers H. Blanck, S.L. Delage, S. Cassette, D. Floriot, E. Chartier, M.A. diForte-Poisson, Andrew Coors, Paul Andrew Bourne	2002	1
14	GaInP/GaAs HBTs: state of the art Irene Sanchez-Lopez, H. Blanck, S. Cassette, D. Floriot, E. Chartier, M.A. diForte-Poisson, Andrew Coors, Paul Andrew Bourne	2002	1
15	High-performance collector-up InGaP/GaAs heterojunctionbipolar transistor with Schottky contact Electronics Letters ·Qingyang WANG, M. Dardeno, S.L. Delage, M.A. diForte-Poisson, E. Chartier, D. Floriot, S. Cassette, P.A. Rolland	1999	11
16	Collector-up InGaP/GaAs-double heterojunction bipolartransistors with high f _max Electronics Letters ·M. Dardeno, S.L. Delage, M.A. diForte-Poisson, E. Chartier, H. Blanck, H.L. Hartnagel	1997	4
17	Power GaInP/GaAs HBT MMICs S.L. Delage, D. Floriot, H. Blanck, S. Cassette, E. Chartier, M.A. diForte-Poisson, C. Brylinski, M Dubernard, Dirk Pons, Pierre Roux, Paul Andrew Bourne, G Vyncke	1994	14
18	Defects in epitaxial Si-doped GaInP Journal of Applied Physics ·Judyta Lubacha-Sember, DAIYunping, M. Zazoui, J. C. Bourgoin, M.A. diForte-Poisson, C. Brylinski, S.L. Delage, H. Blanck	1993	35
19	Buried-Channel Insulated Gate Fets On MOCVD Grown Inp/InGaAs/InP Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·R. E. Davall, Kanchan Pande, M.A. diForte-Poisson, C. Brylinski, Detrano R.Wong, M. Razeghi	1987	3
20	A study of the conduction band non-parabolicity, anisotropy and spin splitting in GaAs and InP Semiconductor Science and Technology ·M. A. Hopkins, R. J. Nicholas, P. Pfeffer, W. Zawadzki, 曲立贞, J. C. Portal, M.A. diForte-Poisson	1987	81

About M.A. diForte-Poisson

M.A. diForte-Poisson is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Mechanics of Materials and Astronomy and Astrophysics, having authored 20 papers that have together received 546 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (8 papers), Radio Frequency Integrated Circuit Design (6 papers), Silicon Carbide Semiconductor Technologies (4 papers), Metal and Thin Film Mechanics (4 papers), Advancements in Semiconductor Devices and Circuit Design (2 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Condensed Matter Physics (369 citations), Atomic and Molecular Physics, and Optics (223 citations), Electrical and Electronic Engineering (375 citations), Electronic, Optical and Magnetic Materials (102 citations) and Materials Chemistry (113 citations). M.A. diForte-Poisson has collaborated with scholars based in France, Germany and Switzerland. Frequent co-authors include S.L. Delage, N. Grandjean, M. Alomari, E. Kohn, C. Dua, David Maier, Christophe Gaquière, P. Pfeffer, W. Zawadzki and M. A. Hopkins. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, Journal of Applied Physics, IEEE Transactions on Device and Materials Reliability and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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