Denis Marcon

4.4k citations

84 papers · 2.7k indexed · h-index 32

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 80
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 25
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 59
- Silicon Carbide Semiconductor Technologies 37
- Advancements in Semiconductor Devices and Circuit Design 12
- Radio Frequency Integrated Circuit Design 6
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 8
Materials Chemistry top 10%
- ZnO doping and properties 6

Co-authors: Stefaan Decoutere M. Van Hove Steve Stoffels Tian‐Li Wu Enrico Zanoni Gaudenzio Meneghesso Matteo Meneghini Benoit Bakeroot
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Electron Device Letters (10 papers)IEEE Transactions on Electron Devices (9 papers)Microelectronics Reliability (7 papers)
Partner nations: Belgium Italy United States

In The Last Decade

Denis Marcon

84 papers receiving 2.6k citations

Peers

Countries citing papers authored by Denis Marcon

Since Specialization

Citations

This map shows the geographic impact of Denis Marcon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Denis Marcon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Denis Marcon more than expected).

Fields of papers citing papers by Denis Marcon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Denis Marcon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Denis Marcon. The network helps show where Denis Marcon may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Denis Marcon, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Denis Marcon Line = papers co-authored together Denis Marcon links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates IEEE Transactions on Semiconductor Manufacturing ·Xiangdong Li,Karen Geens,D. Wellekens,Ming Zhao,Alessandro Magnani,Nooshin Amirifar,Benoit Bakeroot,Shuzhen You,Dirk Fahle,H. Hahn,M. Heuken,gnacio Nuñez,Özgür Aktaş,C. Basceri,Denis Marcon,G. Groeseneken,Stefaan Decoutere	2020	17
2	Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs IEEE Transactions on Electron Devices ·Matteo Borga,Matteo Meneghini,Isabella Rossetto,Steve Stoffels,Niels Posthuma,M. Van Hove,Denis Marcon,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni	2017	43
3	Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests IEEE Electron Device Letters ·Jie Hu,Steve Stoffels,Ming Zhao,Andrea Natale Tallarico,Isabella Rossetto,Matteo Meneghini,Xuanwu Kang,Benoit Bakeroot,Denis Marcon,B. Kaczer,Stefaan Decoutere,G. Groeseneken	2017	34
4	PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms IEEE Transactions on Electron Devices ·Andrea Natale Tallarico,Steve Stoffels,Niels Posthuma,Paolo Magnone,Denis Marcon,Stefaan Decoutere,E. Sangiorgi,C. Fiegna	2017	85
5	Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate Microelectronics Reliability ·Gaudenzio Meneghesso,Matteo Meneghini,Davide Bisi,Isabella Rossetto,Tian‐Li Wu,M. Van Hove,Denis Marcon,Steve Stoffels,Stefaan Decoutere,Enrico Zanoni	2015	39
6	Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs Microelectronics Reliability ·Isabella Rossetto,Matteo Meneghini,Davide Bisi,Kenzo Inagaki,M. Van Hove,Denis Marcon,Tian‐Li Wu,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni	2015	12
7	Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons Applied Physics Letters ·Matteo Meneghini,Davide Bisi,Denis Marcon,Steve Stoffels,M. Van Hove,Tian‐Li Wu,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni	2014	62
8	From TCAD device simulation to scalable compact model development for GaN HEMT powerbar designs Steve Stoffels,N. Ronchi,Brice De Jaeger,Denis Marcon,Stefaan Decoutere,Micheal O. Meyers,Enmanuel Norberto Garza Collazo,A. Graßhoff	2013	4
9	GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs Bristol Research (University of Bristol) ·Marco Silvestri,Michael J. Uren,Denis Marcon,Martin Kuball	2013	1
10	GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS Marco Silvestri,В.И. Кравцова,Denis Marcon,Martin Kuball	2013	1
11	AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction IEEE Transactions on Electron Devices ·Enrico Zanoni,Matteo Meneghini,Alessandro Chini,Denis Marcon,Gaudenzio Meneghesso	2013	112
12	GAN-on-Si HEMTs for 50V RF applications European Microwave Integrated Circuit Conference ·Denis Marcon,Oleg Sinyugin,Sherman Tan Jun Hao,Xuanwu Kang,Silvia Lenci,Steve Stoffels,R. Venegas,Puneet Srivastava,Stefaan Decoutere	2012	6
13	HBM ESD Robustness of GaN-on-Si Schottky Diodes IEEE Transactions on Device and Materials Reliability ·Jae Hack Lee,Alessio Griffoni,Михаил Ганджунцев,D. Linten,S. Thijs,Mirko Scholz,Denis Marcon,Yao Zhang,アルフレード V ラグマイ,A. Concannon,В.А. Ващенко,P. Hopper,S. Bychikhin,D. Pogány,M. Van Hove,Stefaan Decoutere,G. Groeseneken	2012	4
14	(Invited) GaN-on-Si For High-Voltage Applications ECS Transactions ·Domenica Visalli,M. Van Hove,Puneet Srivastava,Denis Marcon,Karen Geens,Xuanwu Kang,Erwin Vandenplas,Oleg Sinyugin,Maarten Leys,Kai Cheng,Patricio Canepa Fernández,Stefaan Decoutere,Gustaaf Borghs	2011	5
15	Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model IRIS UNIMORE (University of Modena and Reggio Emilia) ·Matteo Meneghini,Antonio Stocco,Gianluca Betti Miller,N. Ronchi,Alessandro Chini,Denis Marcon,Gaudenzio Meneghesso,Enrico Zanoni	2011	14
16	GaN-on-Si power field effect transistors Marianne Germain,Joff Derluyn,M. Van Hove,Farid Medjdoub,J. Das,Stone Cheng,Maarten Leys,Domenica Visalli,Denis Marcon,Karen Geens,Oleg Sinyugin,Patricio Canepa Fernández,Stefaan Decoutere,R. Cartuyvels,G. Borghs	2010	2
17	Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C Japanese Journal of Applied Physics ·Denis Marcon,M. Van Hove,Domenica Visalli,Joff Derluyn,J. Das,Farid Medjdoub,Stefan Degroote,Maarten Leys,Kai Cheng,R. Mertens,Marianne Germain,Gustaaf Borghs	2010	11
18	Novel E-Mode GaN-on-Si MOSHEMT Using a Selective Thermal Oxidation IEEE Electron Device Letters ·Farid Medjdoub,M. Van Hove,Kai Cheng,Denis Marcon,Maarten Leys,Stefaan Decoutere	2010	23
19	Switching assessment of GaN transistors for power conversion applications European Conference on Power Electronics and Applications ·J. Das,Denis Marcon,M. Van Hove,Joff Derluyn,Marianne Germain,G. Borghs	2009	8
20	Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si<inf>3</inf>N<inf>4</inf> Joff Derluyn,M. Van Hove,Domenica Visalli,Anne Lorenz,Denis Marcon,Puneet Srivastava,Karen Geens,Patricio Canepa Fernández,Oleg Sinyugin,Xuanwu Kang,J. Das,Farid Medjdoub,Kai Cheng,Stefan Degroote,Maarten Leys,G. Borghs,Marianne Germain	2009	29

About Denis Marcon

Denis Marcon is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Bioengineering, having authored 84 papers that have together received 2.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (80 papers), Semiconductor materials and devices (59 papers), Silicon Carbide Semiconductor Technologies (37 papers), Ga2O3 and related materials (25 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor Quantum Structures and Devices (8 papers), Radio Frequency Integrated Circuit Design (6 papers) and ZnO doping and properties (6 papers). The work is most often cited by research in Condensed Matter Physics (2.5k citations), Electronic, Optical and Magnetic Materials (1.0k citations), Electrical and Electronic Engineering (2.2k citations), Atomic and Molecular Physics, and Optics (426 citations) and Materials Chemistry (389 citations). Denis Marcon has collaborated with scholars based in Belgium, Italy and United States. Frequent co-authors include Stefaan Decoutere, M. Van Hove, Steve Stoffels, Tian‐Li Wu, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini, Benoit Bakeroot, Niels Posthuma and G. Groeseneken. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Microelectronics Reliability, Applied Physics Letters and IEEE Transactions on Semiconductor Manufacturing.

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