Eldad Bahat‐Treidel

2.5k total citations
70 papers, 2.1k citations indexed

About

Eldad Bahat‐Treidel is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Eldad Bahat‐Treidel has authored 70 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Condensed Matter Physics, 62 papers in Electrical and Electronic Engineering and 29 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Eldad Bahat‐Treidel's work include GaN-based semiconductor devices and materials (65 papers), Silicon Carbide Semiconductor Technologies (42 papers) and Semiconductor materials and devices (33 papers). Eldad Bahat‐Treidel is often cited by papers focused on GaN-based semiconductor devices and materials (65 papers), Silicon Carbide Semiconductor Technologies (42 papers) and Semiconductor materials and devices (33 papers). Eldad Bahat‐Treidel collaborates with scholars based in Germany, Italy and Austria. Eldad Bahat‐Treidel's co-authors include Joachim Würfl, Oliver Hilt, Frank Brunner, G. Tränkle, A. Knauer, Rimma Zhytnytska, M. Ťapajna, J. Kuzmı́k, Andreas Wentzel and Kornelius Tetzner and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Industry Applications.

In The Last Decade

Eldad Bahat‐Treidel

65 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Eldad Bahat‐Treidel Germany	25	1.8k	1.5k	1.0k	431	313	70	2.1k
Baoshun Zhang China	18	1.2k 0.6×	935 0.6×	685 0.7×	311 0.7×	188 0.6×	101	1.3k
Min Sun United States	22	1.8k 1.0×	1.7k 1.1×	974 1.0×	344 0.8×	347 1.1×	47	2.1k
Shenglei Zhao China	19	811 0.4×	822 0.5×	707 0.7×	458 1.1×	201 0.6×	103	1.3k
Daniel Piedra United States	20	1.5k 0.8×	1.3k 0.8×	784 0.8×	290 0.7×	288 0.9×	35	1.7k
Zheyang Zheng Hong Kong	27	1.8k 1.0×	1.7k 1.1×	846 0.8×	429 1.0×	361 1.2×	118	2.2k
Huaxing Jiang Hong Kong	21	864 0.5×	709 0.5×	809 0.8×	533 1.2×	177 0.6×	56	1.3k
Tsutomu Uesugi Japan	21	1.1k 0.6×	1.1k 0.7×	491 0.5×	223 0.5×	215 0.7×	59	1.3k
Xun Zheng United States	16	747 0.4×	563 0.4×	468 0.5×	323 0.7×	218 0.7×	29	946
Stephen W. Kaun United States	24	1.1k 0.6×	805 0.5×	1.1k 1.1×	798 1.9×	222 0.7×	33	1.7k
Maojun Wang China	26	2.1k 1.1×	1.8k 1.1×	1.1k 1.1×	395 0.9×	421 1.3×	154	2.3k

Countries citing papers authored by Eldad Bahat‐Treidel

Since Specialization

Citations

This map shows the geographic impact of Eldad Bahat‐Treidel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Eldad Bahat‐Treidel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Eldad Bahat‐Treidel more than expected).

Fields of papers citing papers by Eldad Bahat‐Treidel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Eldad Bahat‐Treidel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Eldad Bahat‐Treidel. The network helps show where Eldad Bahat‐Treidel may publish in the future.

Co-authorship network of co-authors of Eldad Bahat‐Treidel

This figure shows the co-authorship network connecting the top 25 collaborators of Eldad Bahat‐Treidel. A scholar is included among the top collaborators of Eldad Bahat‐Treidel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Eldad Bahat‐Treidel. Eldad Bahat‐Treidel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Bahat‐Treidel, Eldad, Frank Brunner, Anna Mogilatenko, et al.. (2025). Plasma enhanced atomic layer deposition of HfO2—A potential gate dielectric for GaN-based devices. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 43(4).

Bahat‐Treidel, Eldad, et al.. (2025). Thermal properties of GaN layers on foreign vs native substrates: Enabling cost-effective solutions for vertical GaN-based transistors. Journal of Applied Physics. 138(7).

Bahat‐Treidel, Eldad, Paul Plate, Frank Brunner, et al.. (2024). Investigation of atomic layer deposition methods of Al2O3 on n-GaN. Journal of Applied Physics. 135(8). 6 indexed citations

Brunner, Frank, et al.. (2024). GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices. physica status solidi (RRL) - Rapid Research Letters. 18(11). 3 indexed citations

Bahat‐Treidel, Eldad, et al.. (2024). Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 32. 12–12. 1 indexed citations

Meneghini, Matteo, Nicolò Zagni, Matteo Buffolo, et al.. (2024). Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC. SPIRE - Sciences Po Institutional REpository. 1–4. 1 indexed citations

Zagni, Nicolò, G. Verzellesi, Carlo De Santi, et al.. (2023). Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al₂O₃/GaN MOS Capacitors. IEEE Transactions on Electron Devices. 71(3). 1561–1566. 8 indexed citations

Santi, Carlo De, et al.. (2023). Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. Research Padua Archive (University of Padua). 1–5. 3 indexed citations

Tetzner, Kornelius, Eldad Bahat‐Treidel, Oliver Hilt, et al.. (2019). Lateral 1.8 kV $\beta$ -Ga₂O₃ MOSFET With 155 MW/cm² Power Figure of Merit. IEEE Electron Device Letters. 40(9). 1503–1506. 120 indexed citations

10.

Hilt, Oliver, et al.. (2019). Lateral and vertical power transistors in GaN and Ga ₂ O ₃. IET Power Electronics. 12(15). 3919–3927. 19 indexed citations

11.

Rossetto, Isabella, Matteo Meneghini, Riccardo Silvestri, et al.. (2016). Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress. Padua Research Archive (University of Padova). 35–38. 8 indexed citations

12.

Rossetto, Isabella, Matteo Meneghini, Oliver Hilt, et al.. (2016). Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate. IEEE Transactions on Electron Devices. 63(6). 2334–2339. 132 indexed citations

13.

Hilt, Oliver, Eldad Bahat‐Treidel, A. Knauer, et al.. (2015). High-voltage normally OFF GaN power transistors on SiC and Si substrates. MRS Bulletin. 40(5). 418–424. 30 indexed citations

14.

Würfl, Joachim, Oliver Hilt, Eldad Bahat‐Treidel, et al.. (2013). Enabling GaN high speed devices: Microwave meets power electronics - And vice versa. European Microwave Integrated Circuit Conference. 176–179. 3 indexed citations

15.

Hilt, Oliver, et al.. (2011). Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer. 239–242. 100 indexed citations

16.

Brunner, Frank, Eldad Bahat‐Treidel, Carsten Netzel, et al.. (2011). Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2427–2429. 17 indexed citations

17.

Hilt, Oliver, A. Knauer, Frank Brunner, Eldad Bahat‐Treidel, & Joachim Würfl. (2010). Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer. 1–4. 47 indexed citations

18.

Hilt, Oliver, A. Knauer, Frank Brunner, Eldad Bahat‐Treidel, & Joachim Würfl. (2010). Normally-off AlGaN/GaN HFET with p-type Ga Gate and AlGaN buffer. 347–350. 62 indexed citations

19.

Bahat‐Treidel, Eldad, Oliver Hilt, R. Lossy, et al.. (2010). Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs. Semiconductor Science and Technology. 25(7). 75005–75005. 5 indexed citations

20.

Bahat‐Treidel, Eldad, et al.. (2009). Influence of GaN cap on robustness of AlGaN/GaN HEMTs. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact