Shuzhen You

2.1k total citations
89 papers, 1.8k citations indexed

About

Shuzhen You is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shuzhen You has authored 89 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 66 papers in Condensed Matter Physics and 22 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shuzhen You's work include GaN-based semiconductor devices and materials (66 papers), Semiconductor materials and devices (46 papers) and Silicon Carbide Semiconductor Technologies (30 papers). Shuzhen You is often cited by papers focused on GaN-based semiconductor devices and materials (66 papers), Semiconductor materials and devices (46 papers) and Silicon Carbide Semiconductor Technologies (30 papers). Shuzhen You collaborates with scholars based in Belgium, China and Italy. Shuzhen You's co-authors include Stefaan Decoutere, Benoit Bakeroot, Steve Stoffels, Niels Posthuma, G. Groeseneken, M. Van Hove, Ming Zhao, D. Wellekens, Brice De Jaeger and Karen Geens and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Shuzhen You

84 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shuzhen You Belgium 23 1.5k 1.4k 651 307 247 89 1.8k
Tokio Takahashi Japan 16 599 0.4× 515 0.4× 300 0.5× 151 0.5× 199 0.8× 63 880
Johannes Glaab Germany 17 723 0.5× 265 0.2× 443 0.7× 99 0.3× 325 1.3× 43 838
X. Z. Dang United States 9 732 0.5× 526 0.4× 350 0.5× 254 0.8× 203 0.8× 12 825
L. Liu United States 5 613 0.4× 278 0.2× 316 0.5× 102 0.3× 347 1.4× 8 766
Mohsen Nami United States 15 460 0.3× 330 0.2× 207 0.3× 202 0.7× 223 0.9× 32 653
Jyh-Shen Tsay Taiwan 17 145 0.1× 308 0.2× 168 0.3× 706 2.3× 233 0.9× 109 1.0k
Anqi Hu China 15 209 0.1× 327 0.2× 231 0.4× 95 0.3× 272 1.1× 65 670
C. H. Liu Taiwan 11 206 0.1× 240 0.2× 129 0.2× 101 0.3× 264 1.1× 30 469
Janusz Nowak Poland 8 639 0.4× 208 0.2× 1.2k 1.9× 791 2.6× 825 3.3× 46 1.8k
M. Wu United States 15 414 0.3× 210 0.2× 191 0.3× 167 0.5× 164 0.7× 33 479

Countries citing papers authored by Shuzhen You

Since Specialization
Citations

This map shows the geographic impact of Shuzhen You's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shuzhen You with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shuzhen You more than expected).

Fields of papers citing papers by Shuzhen You

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shuzhen You. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shuzhen You. The network helps show where Shuzhen You may publish in the future.

Co-authorship network of co-authors of Shuzhen You

This figure shows the co-authorship network connecting the top 25 collaborators of Shuzhen You. A scholar is included among the top collaborators of Shuzhen You based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shuzhen You. Shuzhen You is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hu, Hao, Mengjie Xu, Jiajun Zhang, et al.. (2025). Engineering Quantum Emitters in 2D Materials. Advanced Optical Materials. 13(24). 2 indexed citations
2.
Li, Xiangdong, Jian Ji, Qiushuang Li, et al.. (2025). MIS p-GaN Tunneling Gate HEMTs on 6-In Si: A Novel Approach to Enhance Gate Reliability. IEEE Transactions on Electron Devices. 72(3). 1060–1065. 2 indexed citations
3.
Li, Xiangdong, Hongyue Wang, Yuebo Liu, et al.. (2024). Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate. Micromachines. 15(1). 156–156. 4 indexed citations
4.
Li, Xiangdong, Lezhi Wang, Zilan Li, et al.. (2024). Achieving ≥ 1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer. IEEE Transactions on Electron Devices. 71(12). 7689–7695. 1 indexed citations
5.
Song, Xiufeng, Tian‐Jun Dai, Zhongxu Wang, et al.. (2024). Impact of negative gate stress on the reliability of p-GaN gate HEMT devices under dynamic switching operation. Physica Scripta. 99(12). 125607–125607.
6.
Li, Xiangdong, Junbo Wang, Jincheng Zhang, et al.. (2023). 1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer. IEEE Electron Device Letters. 45(1). 84–87. 23 indexed citations
7.
Li, Xiangdong, Jincheng Zhang, Rui Gao, et al.. (2023). Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization. Micromachines. 14(5). 1042–1042. 6 indexed citations
8.
Modolo, Nicola, Carlo De Santi, Matteo Borga, et al.. (2022). Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices. IEEE Transactions on Electron Devices. 69(8). 4432–4437. 4 indexed citations
9.
Santi, Carlo De, Shuzhen You, Karen Geens, et al.. (2022). Study and characterization of GaN MOS capacitors: Planar vs trench topographies. Applied Physics Letters. 120(14). 8 indexed citations
10.
Santi, Carlo De, Matteo Buffolo, Matteo Borga, et al.. (2021). Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs. Micromachines. 12(4). 445–445. 14 indexed citations
11.
Santi, Carlo De, Matteo Borga, Karen Geens, et al.. (2021). Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization. Materials. 14(9). 2316–2316. 28 indexed citations
12.
You, Shuzhen, Xiangdong Li, Karen Geens, et al.. (2021). GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V T instability effect. Semiconductor Science and Technology. 36(3). 35008–35008. 1 indexed citations
13.
Li, Xiangdong, Benoit Bakeroot, Nooshin Amirifar, et al.. (2021). Reliability of p-GaN Gate HEMTs in Reverse Conduction. IEEE Transactions on Electron Devices. 68(2). 645–652. 17 indexed citations
14.
Li, Xiangdong, Niels Posthuma, Benoit Bakeroot, et al.. (2020). Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics. IEEE Transactions on Power Electronics. 36(5). 4927–4930. 34 indexed citations
15.
Borga, Matteo, Maria Ruzzarin, Carlo De Santi, et al.. (2020). Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs. Applied Physics Express. 13(2). 24004–24004. 22 indexed citations
16.
Borga, Matteo, Carlo De Santi, Steve Stoffels, et al.. (2020). Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices. Applied Physics Express. 13(2). 24006–24006. 8 indexed citations
17.
Li, Xiangdong, Karen Geens, D. Wellekens, et al.. (2020). Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates. IEEE Transactions on Semiconductor Manufacturing. 33(4). 534–538. 17 indexed citations
18.
Santi, Carlo De, Matteo Borga, Shuzhen You, et al.. (2020). Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. Materials. 13(21). 4740–4740. 17 indexed citations
19.
Zeng, X., et al.. (2019). Function Projective Synchronization of Chaotic Systems with a New Kind of Scaling Function. SHILAP Revista de lepidopterología. 2 indexed citations
20.
Yang, Hongqiang, et al.. (2009). Effect of Nitrogen-deficient and Iron-deficient on Root Architecture of Young Seedlings of Malus hupehensis (Pamp) Rehd.. Acta Horticulturae Sinica. 36(3). 321–326. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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