A. Pantellini

421 citations

30 papers · 345 indexed · h-index 8

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Condensed Matter Physics 29
- GaN-based semiconductor devices and materials 29
Electrical and Electronic Engineering 27
- Radio Frequency Integrated Circuit Design 18
- Silicon Carbide Semiconductor Technologies 13
- Semiconductor materials and devices 7
- Advanced Power Amplifier Design 3

Co-authors: C. Lanzieri A. Nanni Enrico Zanoni Gaudenzio Meneghesso Alessandro Chini Matteo Meneghini Davide Bisi Antonio Stocco
Journals: Microelectronics Reliability (4 papers)IEEE Transactions on Device and Materials Reliability (1 paper)IEEE Electron Device Letters (1 paper)Microelectronic Engineering (1 paper)Journal of Physics D Applied Physics (1 paper)
Partner nations: Italy France Spain

In The Last Decade

A. Pantellini

30 papers receiving 335 citations

Peers

Countries citing papers authored by A. Pantellini

Since Specialization

Citations

This map shows the geographic impact of A. Pantellini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Pantellini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Pantellini more than expected).

Fields of papers citing papers by A. Pantellini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Pantellini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Pantellini. The network helps show where A. Pantellini may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Pantellini, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Pantellini Line = papers co-authored together A. Pantellini links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications IEEE Transactions on Device and Materials Reliability ·Nicolò Zagni, Canon Lau, G. Verzellesi, Alessandro Chini, A. Pantellini, Marco Natali, Andrea Lucibello, Audrey Wingate, C. Lanzieri, Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni	2023	7
2	Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design IEEE Electron Device Letters ·Davide Bisi, Alessandro Chini, Jerry Grondin, Antonio Stocco, Matteo Meneghini, A. Pantellini, A. Nanni, C. Lanzieri, Piero Gamarra, C. Lacam, M. Tordjman, M.A. diForte-Poisson, Gaudenzio Meneghesso, Enrico Zanoni	2015	43
3	Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs Microelectronics Reliability ·Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Jerry Grondin, A. Pantellini, C. Lanzieri, Piero Gamarra, C. Lacam, M. Tordjman, M.A. di Forte-Poisson, D. De Salvador, M. Bazzan, Gaudenzio Meneghesso, Enrico Zanoni	2015	8
4	Selex ES GaN technology: Improvements, results and R&D approach for 0.5μm and 0.25μm process C. Lanzieri, A. Pantellini, P. Romanini, Dai Haiyu, A. Nanni, Richard Singerman	2014	1
5	Evaluation of FET performance and restrictions by low-frequency measurements Cineca Institutional Research Information System (Tor Vergata University) ·Valeria Vadalà, Antonio Raffo, Paolo Colantonio, 家豪王, F. Giannini, C. Lanzieri, A. Pantellini, O. Davignon, Gianni Bosi, G. Vannini	2014	4
6	Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs IRIS UNIMORE (University of Modena and Reggio Emilia) ·Matteo Meneghini, Isabella Rossetto, Davide Bisi, Antonio Stocco, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Chini, A. Pantellini, C. Lanzieri	2014	12
7	A GaN on SiC process with high power density and efficiency Cineca Institutional Research Information System (Tor Vergata University) ·Rocco Giofrè, Paolo Colantonio, F. Giannini, A. Pantellini, A. Nanni, 寇丽娟, C. Lanzieri	2013	2
8	Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors Davide Bisi, Matteo Meneghini, Antonio Stocco, Giannantonio Cibin, A. Pantellini, A. Nanni, C. Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso	2013	9
9	Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs Microelectronics Reliability ·Alessandro Chini, Jerry Grondin, F. Fantini, A. Nanni, A. Pantellini, C. Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni	2013	9
10	1–7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate Cineca Institutional Research Information System (Tor Vergata University) ·Rocco Giofrè, Paolo Colantonio, F. Giannini, A. Pantellini, A. Nanni, C. Lanzieri, Emad El-Gemeie	2012	6
11	Ultra wide band power amplifier using GaN on Si HEMT device Cineca Institutional Research Information System (Tor Vergata University) ·Rocco Giofrè, Paolo Colantonio, F. Giannini, A. Pantellini, A. Nanni, C. Lanzieri, Emad El-Gemeie	2012	2
12	GaN-on-Silicon Evaluation for High-Power MMIC Applications Materials science forum ·A. Pantellini, C. Lanzieri, A. Nanni, K. Friöer, Walter Ciccognani, Sergio Colangeli, Ernesto Limiti	2012	7
13	Field plate related reliability improvements in GaN-on-Si HEMTs Microelectronics Reliability ·Alessandro Chini, Jerry Grondin, F. Fantini, A. Nanni, A. Pantellini, C. Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni	2012	6
14	Thermal behavior of AlGaN/GaN HEMT on silicon Microstrip technology European Microwave Integrated Circuit Conference ·A. Pantellini, A. Nanni, C. Lanzieri	2011	4
15	Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology Microelectronics Reliability ·Michele Riccio, A. Pantellini, Andrea Irace, Giovanni Breglio, A. Nanni, C. Lanzieri	2011	21
16	Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications Microelectronic Engineering ·Andriana Fassoulakis, E. Giovine, A. Notargiacomo, A. Pantellini, P. Romanini, M. Peroni, A. Nanni	2011	4
17	High Voltage Breakdown pHEMTs for C-band HPA IRIS UNIMORE (University of Modena and Reggio Emilia) ·S. Lavanga, Alessandro Chini, J. K. Lee, Olga Di Ruggero, A. Nanni, A. Pantellini, P. Romanini, C. Lanzieri	2010	5
18	Performance assessment of GaN HEMT technologies for power limiter and switching applications A. Pantellini, M. Peroni, A. Nanni, Cheng Zhi-ji	2010	2
19	Gate technology and substrate property influence on GaN HEMT switch device performance A. Pantellini, M. Peroni, A. Nanni, A. Cetronio, Cheng Zhi-ji, E. Giovine	2009	2
20	New fabrication process to manufacture RF-MEMS and HEMT on GaN/Si substrate Dai Haiyu, A. Pantellini, S. Lavanga, A. Nanni, P. Romanini, K H Iran Doust, Paola Farinelli, C. Lanzieri	2009	5

About A. Pantellini

A. Pantellini is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 30 papers that have together received 345 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (29 papers), Radio Frequency Integrated Circuit Design (18 papers), Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor materials and devices (7 papers), Semiconductor Quantum Structures and Devices (6 papers), Acoustic Wave Resonator Technologies (3 papers), Advanced Power Amplifier Design (3 papers) and Ga2O3 and related materials (3 papers). The work is most often cited by research in Condensed Matter Physics (307 citations), Electrical and Electronic Engineering (298 citations), Electronic, Optical and Magnetic Materials (76 citations), Atomic and Molecular Physics, and Optics (95 citations) and Materials Chemistry (46 citations). A. Pantellini has collaborated with scholars based in Italy, France and Spain. Frequent co-authors include C. Lanzieri, A. Nanni, Enrico Zanoni, Gaudenzio Meneghesso, Alessandro Chini, Matteo Meneghini, Davide Bisi, Antonio Stocco, Isabella Rossetto and P. Romanini. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Device and Materials Reliability, IEEE Electron Device Letters, Microelectronic Engineering and Journal of Physics D Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact