C. Lanzieri
About
In The Last Decade
C. Lanzieri
131 papers receiving 1.8k citations
Peers
Comparison fields: 5 of 44
- Electrical and Electronic Engineering 1.7k
- Condensed Matter Physics 680
- Atomic and Molecular Physics, and Optics 534
- Nuclear and High Energy Physics 245
- Materials Chemistry 174
Countries citing papers authored by C. Lanzieri
This map shows the geographic impact of C. Lanzieri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Lanzieri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Lanzieri more than expected).
Fields of papers citing papers by C. Lanzieri
This network shows the impact of papers produced by C. Lanzieri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Lanzieri. The network helps show where C. Lanzieri may publish in the future.
Co-authorship network of co-authors of C. Lanzieri
This figure shows the co-authorship network connecting the top 25 collaborators of C. Lanzieri. A scholar is included among the top collaborators of C. Lanzieri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Lanzieri. C. Lanzieri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 7 | |
| 2 | 13 | |
| 3 | 1 | |
| 4 | Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs | 12 |
| 5 | A GaN on SiC process with high power density and efficiency | 2 |
| 6 | 1–7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate | 6 |
| 7 | 2 | |
| 8 | Thermal behavior of AlGaN/GaN HEMT on silicon Microstrip technology | 4 |
| 9 | C-Band MMIC chipset and digital control circuits for T/R modules based on GaAs enhancement/depletion technology | 3 |
| 10 | High Voltage Breakdown pHEMTs for C-band HPA | 5 |
| 11 | X-band T/R module in state-of-the-art GaN technology | 25 |
| 12 | Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach | 5 |
| 13 | 14 | |
| 14 | 3 | |
| 15 | 30 | |
| 16 | A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates | 1 |
| 17 | Fabrication and non-linear load-pull characterization of GaN HEMT on SiC for high power applications | 1 |
| 18 | Status of Wide Bandgap Semiconductors Technologies for High Power Microwave Applications in AMS/Italy | 1 |
| 19 | 7 | |
| 20 | 4 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.