Minhan Mi

1.3k total citations
91 papers, 991 citations indexed

About

Minhan Mi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Minhan Mi has authored 91 papers receiving a total of 991 indexed citations (citations by other indexed papers that have themselves been cited), including 91 papers in Condensed Matter Physics, 70 papers in Electrical and Electronic Engineering and 50 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Minhan Mi's work include GaN-based semiconductor devices and materials (91 papers), Ga2O3 and related materials (50 papers) and Radio Frequency Integrated Circuit Design (35 papers). Minhan Mi is often cited by papers focused on GaN-based semiconductor devices and materials (91 papers), Ga2O3 and related materials (50 papers) and Radio Frequency Integrated Circuit Design (35 papers). Minhan Mi collaborates with scholars based in China, United Kingdom and United States. Minhan Mi's co-authors include Xiaohua Ma, Yue Hao, Meng Zhang, Ling Yang, Bin Hou, Qing Zhu, Jiejie Zhu, Yang Lu, Mei Wu and Pengfei Wang and has published in prestigious journals such as Applied Physics Letters, Journal of Physics D Applied Physics and Journal of Alloys and Compounds.

In The Last Decade

Minhan Mi

86 papers receiving 914 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Minhan Mi China 19 936 745 430 225 181 91 991
Brian L. Swenson United States 14 885 0.9× 719 1.0× 483 1.1× 193 0.9× 220 1.2× 24 998
Hirokuni Tokuda Japan 17 931 1.0× 750 1.0× 553 1.3× 187 0.8× 255 1.4× 71 1.1k
Yaozong Zhong China 17 640 0.7× 484 0.6× 350 0.8× 125 0.6× 168 0.9× 35 707
Ki‐Sik Im South Korea 18 937 1.0× 877 1.2× 422 1.0× 137 0.6× 216 1.2× 69 1.1k
Yi Pei United States 20 1.1k 1.2× 883 1.2× 448 1.0× 290 1.3× 230 1.3× 57 1.2k
J.W. Chung United States 7 665 0.7× 538 0.7× 367 0.9× 137 0.6× 168 0.9× 10 751
Matthew Guidry United States 20 1.1k 1.2× 831 1.1× 474 1.1× 341 1.5× 256 1.4× 57 1.2k
R. Stoklas Slovakia 16 725 0.8× 710 1.0× 426 1.0× 175 0.8× 231 1.3× 58 903
Cory Lund United States 15 619 0.7× 398 0.5× 276 0.6× 181 0.8× 195 1.1× 31 698
Brian Romanczyk United States 20 1.1k 1.2× 894 1.2× 482 1.1× 373 1.7× 282 1.6× 58 1.3k

Countries citing papers authored by Minhan Mi

Since Specialization
Citations

This map shows the geographic impact of Minhan Mi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Minhan Mi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Minhan Mi more than expected).

Fields of papers citing papers by Minhan Mi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Minhan Mi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Minhan Mi. The network helps show where Minhan Mi may publish in the future.

Co-authorship network of co-authors of Minhan Mi

This figure shows the co-authorship network connecting the top 25 collaborators of Minhan Mi. A scholar is included among the top collaborators of Minhan Mi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Minhan Mi. Minhan Mi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mi, Minhan, Xinyao Zhang, Tianhao Liu, et al.. (2025). High Performance AlN/GaN/AlN/GaN Double Channel Fin-HEMT for Ka-band Low Voltage Wireless Communication Applications. IEEE Electron Device Letters. 46(11). 1950–1953.
2.
Yang, Mei, Yifan Li, Peng Zhang, et al.. (2024). Comparison of AlN/GaN heterojunctions grown by molecular beam epitaxy with Al and Ga assistance. Journal of Alloys and Compounds. 1008. 176559–176559. 1 indexed citations
3.
Wang, Pengfei, Minhan Mi, Yilin Chen, et al.. (2024). Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages. IEEE Transactions on Electron Devices. 71(3). 1421–1427. 5 indexed citations
4.
Wang, Pengfei, Minhan Mi, Zhihong Chen, et al.. (2024). 5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer. IEEE Electron Device Letters. 45(10). 1717–1720. 1 indexed citations
5.
Mi, Minhan, et al.. (2024). High Performance AlN/GaN HEMT for Millimeter-Wave Low-Voltage Applications Fabricated Using Low-Damage Etching. IEEE Electron Device Letters. 45(12). 2327–2330. 2 indexed citations
6.
Chen, Yilin, Qing Zhu, Meng Zhang, et al.. (2024). Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs. IEEE Transactions on Electron Devices. 71(3). 1448–1454. 1 indexed citations
7.
Mi, Minhan, Pengfei Wang, Yilin Chen, et al.. (2023). High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications. IEEE Transactions on Electron Devices. 71(3). 1383–1386. 10 indexed citations
8.
Mi, Minhan, Pengfei Wang, Yilin Chen, et al.. (2023). InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications. IEEE Journal of the Electron Devices Society. 11. 72–77. 5 indexed citations
9.
Ye, Ran, Xiaolong Cai, Xiangyang Duan, et al.. (2023). A review on GaN HEMTs: nonlinear mechanisms and improvement methods. Journal of Semiconductors. 44(12). 121801–121801. 20 indexed citations
10.
11.
Lu, Hao, Meng Zhang, Ling Yang, et al.. (2023). A review of GaN RF devices and power amplifiers for 5G communication applications. Fundamental Research. 5(1). 315–331. 33 indexed citations
12.
Mi, Minhan, Yutong Han, Pengfei Wang, et al.. (2022). High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications. IEEE Transactions on Electron Devices. 70(1). 43–47. 14 indexed citations
13.
Mi, Minhan, Jiejie Zhu, Pengfei Wang, et al.. (2022). High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications. IEEE Transactions on Electron Devices. 69(8). 4188–4193. 8 indexed citations
14.
Mi, Minhan, et al.. (2022). Investigation of InAlN/GaN Double Channel HEMTs for Improved Linearity. 1 indexed citations
15.
Zhu, Jiejie, Minhan Mi, Meng Zhang, et al.. (2021). Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications. IEEE Journal of the Electron Devices Society. 9. 756–762. 31 indexed citations
16.
Mi, Minhan, Jiejie Zhu, Pengfei Wang, et al.. (2021). Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation. IEEE Transactions on Electron Devices. 69(2). 631–636. 15 indexed citations
17.
Zhu, Jiejie, Yingcong Zhang, Xiaohua Ma, et al.. (2020). Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique. Semiconductor Science and Technology. 35(6). 65017–65017. 3 indexed citations
18.
Zhang, Meng, Minhan Mi, Bin Hou, et al.. (2019). The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors. Japanese Journal of Applied Physics. 58(SC). SCCB25–SCCB25. 1 indexed citations
19.
Mi, Minhan, Yang Lu, Yue Hao, et al.. (2018). Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatment. 208–211. 6 indexed citations
20.
Zhang, Kai, Minhan Mi, Shenglei Zhao, et al.. (2014). Enhancement‐mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma implantation. physica status solidi (a). 212(5). 1081–1085. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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