Minhan Mi

1.3k citations

91 papers · 991 indexed · h-index 19

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 91
- GaN-based semiconductor devices and materials 91
Electronic, Optical and Magnetic Materials 50
- Ga2O3 and related materials 50

Co-authors: Xiaohua Ma (87 shared papers)Yue Hao (64 shared papers)Meng Zhang (60 shared papers)Ling Yang (52 shared papers)Bin Hou (50 shared papers)Qing Zhu (43 shared papers)Jiejie Zhu (33 shared papers)Yang Lu (19 shared papers)
Journals: IEEE Transactions on Electron Devices (19 papers)IEEE Electron Device Letters (12 papers)Applied Physics Letters (4 papers)IEEE Journal of the Electron Devices Society (4 papers)physica status solidi (a) (4 papers)
Partner nations: China United Kingdom United States

In The Last Decade

Minhan Mi

86 papers receiving 914 citations

Peers

Countries citing papers authored by Minhan Mi

Since Specialization

Citations

This map shows the geographic impact of Minhan Mi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Minhan Mi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Minhan Mi more than expected).

Fields of papers citing papers by Minhan Mi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Minhan Mi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Minhan Mi. The network helps show where Minhan Mi may publish in the future.

Co-authors

The 25 scholars most cited alongside Minhan Mi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Minhan Mi Line = papers co-authored together Minhan Mi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 91 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology IEEE Electron Device Letters ·Yang Lu, Xiaohua Ma, Ling Yang, Bin Hou, Minhan Mi, Meng Zhang, Jiaxin Zheng, Hengshuang Zhang, Yue Hao	2018	47
2	AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g _m and Gain Linearity IEEE Transactions on Electron Devices ·Hao Lu, Bin Hou, Ling Yang, Xuerui Niu, Zeyan Si, Meng Zhang, Mei Wu, Minhan Mi, Qing Zhu, Kai Cheng, Xiaohua Ma, Yue Hao	2021	45
3	Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region IEEE Transactions on Electron Devices ·Minhan Mi, Xiaohua Ma, Ling Yang, Yang Lu, Bin Hou, Jiejie Zhu, Meng Zhang, Hengshuang Zhang, Qing Zhu, Lin‐An Yang, Yue Hao	2017	35
4	A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications IEEE Electron Device Letters ·Sheng Wu, Yue Hao, Xiaohua Ma, Ling Yang, Minhan Mi, Meng Zhang, Mei Wu, Yang Lu, Hengshuang Zhang, Chupeng Yi	2019	34
5	A review of GaN RF devices and power amplifiers for 5G communication applications Fundamental Research ·Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao	2023	33
6	Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs IEEE Transactions on Electron Devices ·Meng Zhang, Xiaohua Ma, Ling Yang, Minhan Mi, Bin Hou, Yunlong He, Sheng Wu, Yang Lu, Hengshuang Zhang, Qing Zhu, Jun Yin, Jiafeng Wu, Lin‐An Yang, Yue Hao	2018	32
7	Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications IEEE Journal of the Electron Devices Society ·Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao	2021	31
8	90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application Applied Physics Letters ·Minhan Mi, Xiaohua Ma, Ling Yang, Bin Hou, Jiejie Zhu, Yunlong He, Meng Zhang, Sheng Wu, Yue Hao	2017	29
9	Enhanced g_mand f_TWith High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge IEEE Electron Device Letters ·Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, Qing Zhu, Yang Lu, Meng Zhang, Yunlong He, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2017	28
10	The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer IEEE Transactions on Electron Devices ·Ling Yang, Bin Hou, Fuchun Jia, Meng Zhang, Mei Wu, Xuerui Niu, Hao Lu, Chunzhou Shi, Minhan Mi, Qing Zhu, Yang Lu, Xiaohua Ma, Yue Hao	2022	27
11	Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP IEEE Electron Device Letters ·Yunlong He, Minhan Mi, Chong Wang, Xuefeng Zheng, Meng Zhang, Hengshuang Zhang, Ji Wu, Ling Yang, Peng Zhang, Xiaohua Ma, Yue Hao	2017	26
12	Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Pengfei Wang, Xiaohua Ma, Minhan Mi, Meng Zhang, Jiejie Zhu, Yuwei Zhou, Sheng Wu, Jielong Liu, Ling Yang, Bin Hou, Yue Hao	2021	24
13	High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si <inline-formula> <tex-math notation="LaTeX">$\delta$ </tex-math> </inline-formula>-Doped AlGaN/GaN:C HEMTs IEEE Transactions on Electron Devices ·Ling Yang, Meng Zhang, Bin Hou, Minhan Mi, Mei Wu, Qing Zhu, Jiejie Zhu, Yang Lu, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2019	24
14	High linearity and high power performance with barrier layer of sandwich structure and Al_0.05GaN back barrier for X-band application Journal of Physics D Applied Physics ·Bin Hou, Ling Yang, Minhan Mi, Meng Zhang, Chupeng Yi, Mei Wu, Qing Zhu, Yang Lu, Jiejie Zhu, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2020	23
15	The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Fuchun Jia, Xiaohua Ma, Ling Yang, Bin Hou, Meng Zhang, Qing Zhu, Mei Wu, Minhan Mi, Jiejie Zhu, Siyu Liu, Yue Hao	2021	21
16	High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment IEEE Electron Device Letters ·Ling Yang, Bin Hou, Minhan Mi, Qing Zhu, Mei Wu, Jiejie Zhu, Yang Lu, Meng Zhang, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao	2018	21
17	A review on GaN HEMTs: nonlinear mechanisms and improvement methods Journal of Semiconductors ·Chenglin Du, Ran Ye, Xiaolong Cai, Xiangyang Duan, Haijun Liu, Yu Zhang, Gang Qiu, Minhan Mi	2023	20
18	Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors Applied Physics Letters ·Jiejie Zhu, Yingcong Zhang, Michael J. Uren, Siyu Liu, Pengfei Wang, Minhan Mi, Bin Hou, Ling Yang, Martin Kuball, Xiaohua Ma, Yue Hao	2020	20
19	A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN IEEE Transactions on Electron Devices ·Sheng Wu, Minhan Mi, Meng Zhang, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao	2021	19
20	Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel Applied Physics Letters ·Meng Zhang, Xiaohua Ma, Minhan Mi, Yunlong He, Bin Hou, Jiaxin Zheng, Qing Zhu, Lixiang Chen, Peng Zhang, Ling Yang	2017	18

About Minhan Mi

Minhan Mi is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 91 papers that have together received 991 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (91 papers), Ga2O3 and related materials (50 papers), Radio Frequency Integrated Circuit Design (35 papers), Semiconductor materials and devices (29 papers), Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor Quantum Structures and Devices (16 papers), ZnO doping and properties (15 papers) and Metal and Thin Film Mechanics (7 papers). The work is most often cited by research in Condensed Matter Physics (936 citations), Electronic, Optical and Magnetic Materials (430 citations), Electrical and Electronic Engineering (745 citations), Atomic and Molecular Physics, and Optics (225 citations) and Materials Chemistry (181 citations). Minhan Mi has collaborated with scholars based in China, United Kingdom and United States. Frequent co-authors include Xiaohua Ma, Yue Hao, Meng Zhang, Ling Yang, Bin Hou, Qing Zhu, Jiejie Zhu, Yang Lu, Mei Wu and Pengfei Wang. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, IEEE Journal of the Electron Devices Society and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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